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| NJW3281G (NPN) NJW1302G (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The NJW3281G and NJW1302G are power transistors for high power audio, disk head positioners and other linear applications. Features http://onsemi.com Preferred Devices * * * * * * * * * * * Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 5 A Excellent Gain Linearity High BVCEO High Frequency These are Pb-Free Devices Reliable Performance at Higher Powers Symmetrical Characteristics in Complementary Configurations Accurate Reproduction of Input Signal Greater Dynamic Range High Amplifier Bandwith 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS MARKING DIAGRAM Benefits NJWxxxG AYWW Applications * High-End Consumer Audio Products * Home Amplifiers Home Receivers Professional Audio Amplifiers Theater and Stadium Sound Systems Public Address Systems (PAs) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage - 1.5 V Collector Current Collector Current - Continuous - Peak (Note 1) Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 250 250 5.0 250 15 30 1.6 200 1.43 - 65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc W W/C C xxxx G A Y WW TO-3P CASE 340AB STYLES 1,2,3 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) = 0281 or 0302 = Pb-Free Package = Assembly Location = Year = Work Week ORDERING INFORMATION Device NJW3281G NJW1302G Package TO-3P (Pb-Free) TO-3P (Pb-Free) Shipping 30 Units/Rail 30 Units/Rail Base Current - Continuous Total Power Dissipation @ TC = 25C Derate Above 25C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RqJC RqJA Max 0.625 40 Unit C/W C/W Preferred devices are recommended choices for future use and best overall value. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. (c) Semiconductor Components Industries, LLC, 2008 1 January, 2008 - Rev. 0 Publication Order Number: NJW3281/D NJW3281G (NPN) NJW1302G (PNP) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCB = 250 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non-repetitive) ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc) (IC = 1 Adc, VCE = 5 Vdc) (IC = 3 Adc, VCE = 5 Vdc) (IC = 5 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) Base-Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) fT Cob 600 30 pF MHz hFE 75 75 75 60 45 VCE(sat) VBE(on) 1.5 0.4 0.6 Vdc 150 150 150 Vdc IS/b 4 Adc VCEO(sus) 250 ICBO IEBO 5 50 mAdc mAdc Vdc Symbol Min Typ Max Unit http://onsemi.com 2 NJW3281G (NPN) NJW1302G (PNP) TYPICAL CHARACTERISTICS PNP NJW1302G 60 fTau, CURRENT BANDWIDTH PRODUCT (MHz) 50 40 5V 30 20 10 0 0.1 fTau, CURRENT BANDWIDTH PRODUCT (MHz) TJ = 25C ftest = 1 MHz VCE = 10 V 60 5V 40 80 TJ = 25C ftest = 1 MHz VCE = 10 V NPN NJW3281G 20 1 IC, COLLECTOR CURRENT (A) 10 0 0.1 1 IC, COLLECTOR CURRENT (A) 10 Figure 1. Typical Current Gain Bandwidth Product 1000 VCE = 5 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 1000 Figure 2. Typical Current Gain Bandwidth Product VCE = 5 V 125C 100 25C -30C 125C 100 25C -30C 10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) 100 10 0.1 1 10 IC, COLLECTOR CURRENT (A) 100 Figure 3. DC Current Gain Figure 4. DC Current Gain 1000 VCE = 20 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 1000 VCE = 20 V 125C 100 25C -30C 125C 25C 100 -30C 10 0.01 0.1 1 10 100 10 0.1 1 10 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. DC Current Gain Figure 6. DC Current Gain http://onsemi.com 3 NJW3281G (NPN) NJW1302G (PNP) TYPICAL CHARACTERISTICS PNP NJW1302G 1 COLLECTOR-EMITTER SATURATION VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE (V) 5A 3A 1A 0.1 0.5 A IC = 0.1 A 1 NPN NJW3281G 5A 1A 0.1 0.5 A 3A IC = 0.1 A TJ = 25C TJ = 25C 0.01 0.001 0.01 0.1 1 0.01 0.001 0.01 0.1 1 IB, BASE CURRENT (A) IB, BASE CURRENT (A) Figure 7. Saturation Region 1 IC/IB = 10 SATURATION VOLTAGE (V) SATURATION VOLTAGE (V) 1 Figure 8. Saturation Region IC/IB = 10 0.1 25C 0.1 25C -30C 125C -30C 125C 0.01 0.01 0.1 1 10 100 0.01 0.01 IC, COLLECTER CURRENT (A) 0.1 1 10 IC, COLLECTER CURRENT (A) 100 Figure 9. VCE(sat), Collector-Emitter Saturation Voltage 1.6 BASE-EMITTER VOLTAGE (V) BASE-EMITTER VOLTAGE (V) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.01 0.1 1 10 -30C 25C 125C VCE = 5 V 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.01 Figure 10. VCE(sat), Collector-Emitter Saturation Voltage VCE = 5 V -30C 25C 125C 100 0.1 1 10 100 IC, COLLECTER CURRENT (A) IC, COLLECTER CURRENT (A) Figure 11. VBE(on), Base-Emitter Voltage Figure 12. VBE(on), Base-Emitter Voltage http://onsemi.com 4 NJW3281G (NPN) NJW1302G (PNP) TYPICAL CHARACTERISTICS 1200 Cob, OUTPUT CAPACITANCE (pF) 1000 800 600 400 200 0 0 10 20 30 40 50 60 70 80 90 100 VCB, COLLECTER-BASE VOLTAGE (V) PNP NJW1302G Cob, OUTPUT CAPACITANCE (pF) TJ = 25C fTest = 1 MHz 1200 1000 800 600 400 200 0 0 20 NPN NJW3281G TJ = 25C fTest = 1 MHz 40 60 80 100 VCB, COLLECTER-BASE VOLTAGE (V) Figure 13. Output Capacitance Figure 14. Output Capacitance 12000 Cib, INPUT CAPACITANCE (pF) TJ = 25C fTest = 1 MHz 10000 Cib, INPUT CAPACITANCE (pF) TJ = 25C fTest = 1 MHz 8000 10000 8000 6000 6000 4000 4000 2000 0 1 2 3 4 5 6 7 8 9 10 VEB, EMITTER-BASE VOLTAGE (V) 2000 0 2 4 6 8 10 VEB, EMITTER-BASE VOLTAGE (V) Figure 15. Input Capacitance Figure 16. Input Capacitance http://onsemi.com 5 NJW3281G (NPN) NJW1302G (PNP) PNP NJW1302G 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 100 NPN NJW3281G 10 mSec 10 100 mSec 1 Sec 1.0 10 1 Sec 1.0 10 mSec 100 mSec 0.1 1.0 10 100 VCE, COLLECTOR EMITTER (VOLTS) 1000 0.1 1.0 10 100 VCE, COLLECTOR EMITTER (VOLTS) 1000 Figure 17. Active Region Safe Operating Area Figure 18. Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 17 and 18 is based on TJ(pk) = 150C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. http://onsemi.com 6 NJW3281G (NPN) NJW1302G (PNP) PACKAGE DIMENSIONS TO-3P-3LD CASE 340AB-01 ISSUE A A B 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM THE TERMINAL TIP. 4. DIMENSION A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A B C D E F G H J K L P Q U W MILLIMETERS MIN NOM MAX 19.70 19.90 20.10 15.40 15.60 15.80 4.60 4.80 5.00 0.80 1.00 1.20 1.45 1.50 1.65 1.80 2.00 2.20 5.45 BSC 1.20 1.40 1.60 0.55 0.60 0.75 19.80 20.00 20.20 18.50 18.70 18.90 3.30 3.50 3.70 3.10 3.20 3.50 5.00 REF 2.80 3.00 3.20 B Q C E U A L (3) P K 1 2 3 3X D 0.25 M AB S H J F W G G STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 2: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 3: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN PowerBase is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 7 NJW3281/D |
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