 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| RFMA0912-1W-Q7 UPDATED: 04/24/2008 9.50 - 11.70 GHz High-Gain Surface Mounted PA FEATURES * * * * * * * 9.50 - 11.70GHz Operating Frequency Range 30dBm Output Power @1dB Compression 30dB Typical Power Gain @1dB Compression -41dBc OIMD3 @Pout = 20dBm/tone 7X7mm QFN Package Point-to-point and point-to-multipoint radio Military Radar Systems APPLICATIONS ELECTRICAL CHARACTERISTICS (TB=25 C) SYMBOL F P1dB G1dB OIMD3 Input RL Output RL ID1 ID2 VD1, VD2 VG1, VG2 Rth Tb PARAMETER/TEST CONDITIONS Operating Frequency Range Output Power @1dB Gain Compression Gain @1dB Gain Compression Output 3rd Order Intermodulation Distortion @f=10MHz, Pout = 20dBm/tone Input Return Loss Output Return Loss Drain Current Drain Current Gate Voltage Thermal Resistance 2 1 1 MIN 9.50 29.0 27.5 TYP MAX 11.70 UNITS GHz dBm dB 30.0 30.0 -41 -10 -6 180 800 7 220 1100 8 -0.3 9 -38 dBc dB dB mA mA V V o Drain Voltage -2.5 -30 C/W o Operating Base Plate Temperature +80 C 1. Recommended to bias each amplifier stage separately using a gate voltage range, starting from -2.5 to -0.3V to achieve typical current levels. 2. Measured result when used with Excelics recommended evaluation board. MAXIMUM RATINGS AT 25C3,4 SYMBOL VD1, VD2 VG1, VG2 ID1, ID2 PIN TCH TSTG PT CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE 12V -5V Idss 20dBm 175C -65/175C 15.0W CONTINOUS 8V -2.5 V 220, 1100mA @ 3dB compression 150C -65/150C 12.6W 3. Operation beyond absolute or continuous ratings may result in permanent damage or reduction of MTTF respectively. 4. Bias conditions must also satisfy the following equation VDS*IDS < (TCH -TB)/RTH; where TB = Temperature of Base Plate Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 Revised May 2008 RFMA0912-1W-Q7 UPDATED: 04/24/2008 9.50 - 11.70 GHz High-Gain Surface Mounted PA Package Dimension and Pin Assignment Top View 0.2760.002 0.2760.002 Bottom View 22 28 EXCELICS RFMA0912 -1W-Q7 0 REF 0.2760.002 0.049 MAX 0.008 0 REF 0 REF 0.240 21 1 0.038 0.036 0.013 0 REF 15 14 8 7 0.0120.002 0.0320.002 * All measurements in inches Additional Notes: 1) Ground Plane must be soldered to PCB RF ground 2) All dimensions are in inches 3) Refer to Excelics application notes on QFNs for further guidelines 4) Pin Assignment: Top View Vd1 Vd2 Bottom View Vd2 22 Vd1 28 RFin EXCELICS RFMA0912 -1W-Q7 Vg1 Vg2 21 1 RFout RFout RFin 15 14 8 7 Vg2 Vg1 Pin 1, 2, 3, 5, 6, 7, 8, 10, 11, 12, 14 4 9 13 15, 16, 17, 19, 20, 21, 22, 24, 25, 26, 28 18 23 27 Assignment NC RFin Vg1 Vg2 NC RFout Vd2 Vd1 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 4 Revised May 2008 RFMA0912-1W-Q7 UPDATED: 04/24/2008 9.50 - 11.70 GHz High-Gain Surface Mounted PA Typical Performance: 1. Small-Signal Parameters(@Vds = 7V, Ids1 = 180mA, Ids2 = 800mA) S21 S22 S11 2. P1-dB & G1-dB (@Vds = 7V, Ids1 = 180mA, Ids2 = 800mA) 33 34 32 31 32 30 28 26 24 22 20 12.5 G1dB(dB) P1dB(dBm) 30 29 28 27 26 25 9 9.5 10 10.5 11 11.5 12 Frequency(GHz) P1-dB G1-dB Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 4 Revised May 2008 RFMA0912-1W-Q7 UPDATED: 04/24/2008 9.50 - 11.70 GHz High-Gain Surface Mounted PA Recommended Circuit Schematic: Vd1 22uF 0.1uF NC Vd2 Vd1 NC NC NC Vd2 0.1uF NC 22uF NC NC NC RFin NC NC NC EXCELICS RFMA0912 -1W-Q7 NC NC NC NC RFout NC NC NC Vg1 NC NC NC Vg2 NC Vg1 22uF 0.1uF 0.1uF 22uF Vg2 Notes: 1) External bypass capacitors should be placed as close to the package as possible. 2) Dual biasing sequence required: a. Turn-on Sequence: Apply Vg1 = -2.5V, Vg2 = -2.5V, followed by Vd1 = Vd2 = 7V, lastly increase Vg1 & Vg2 in sequence until required Id1 and Id2 is obtained. b. Turn-off Sequence: Turn off Vd1 & Vd2, followed by Vg1 & Vg2 3) Demonstration board available upon request. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 4 of 4 Revised May 2008 |
Price & Availability of RFMA0912-1W-Q7
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |