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| VS665N Visible Light Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25*Z) CONDITIONS ITEM SYMBOL IF=20mA Power Output PO IF=20mA Forward Voltage VF VR=5V Reverse Current IR Peak Wavelength Ep IF=20mA Spectral Line Half Width E IF=20mA Half Intensity Beam Angle AE IF=20mA IFP=20mA Rise Time Tr IFP=20mA Fall Time Tf 1MHz ,V=0V Junction Capacitance Cj IF=10mA Temp. Coefficient of PO P/T Temp. Coefficient of VF IF=10mA V/T RELATIVE POWER OUTPUT(%) FORWARD I-V CHARACTERISTICS 60 50 40 30 20 10 0 0 1 2 FORWARD VOLTAGE(V) MIN 1.5 TYP 3.0 1.8 660 25 6 30 30 20 -0.5 -1.5 MAX 2.2 100 UNIT mW V EA nm nm deg. nS nS pF %/*Z mV/*Z RELATIVE POWER OUTPUT(%) FORWARD CURRENT(mA) @Anode High-output Power Narrow Beam Angle High Reliability APPLICATIONS Color Sensor (Money-bill) Paper Sensor (Money-bill) Bar-code Reader FEATURES 120 RELATIVE POWER OUTPUT(%) A Cathode 300 200 100 0 RELATIVE POWER vs FORWARD CURRENT RADIATION PATTERN 120 100 80 60 40 20 -60 -30 0 30 BEAM ANGLE(deg.) FORWARD VOLTAGE vs TEMPERATURE IF=10mA 60 90 SPECTRAL OUTPUT 3 0 10 20 30 40 50 FORWARD CURRENT(mA) 0 60 -90 1. ABSOLUTE MAXIMUM RATINGS (Ta=25*Z) RATINGS ITEM SYMBOL 50 Forward Current (DC) IF 0.5 Forward Current (Pulse)*1 IFP Reverse Voltage 5 VR 110 Power Dissipation PD Topr Operating Temp. -20 TO 85 Tstg Storage Temp. -30 TO 100 Junction Temp. 100 Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body 100 FORWARD CURRENT(mA) 80 60 40 20 0 610 660 WAVELENGTH(nm) 710 RELATIVE POWER OUTPUT(%) THERMAL DERATING CURVE 60 50 40 30 20 10 0 -30 0 30 60 AMBIENT TEMPERATURE(*Z) UNIT mA A V mW *Z *Z *Z *Z 120 100 80 60 40 20 0 -30 0 30 60 AMBIENT TEMPERATURE(*Z) FORWARD VOLTAGE(V) POWER OUTPUT vs TEMPERATURE IF=10mA 140 3 2.5 2 1.5 1 0.5 0 -30 90 90 0 30 60 AMBIENT TEMPERATURE(*Z) 90 OPTRANS To purchase this part contact Marktech Optoelectronics at 800.984.5337 Marktech Optoelectronics www.marktechopto.com 2000/10/24 125-VS665N |
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