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MMBT6427
NPN Transistors Darlington Amplifier
* We declare that the material of product compliance with RoHS requirements.
COLLECTOR 3 BASE 1
P b Lead(Pb)-Free
EMITTER 2
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V CBO V
EBO
V alue 40 40 12 500
Unit Vdc Vdc Vdc mAdc
1 2
3
IC
SOT-23
Max 225 1.8 556 300 Unit mW mW/C C/W mW mW/C C/W C
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD
RJA PD
RJA TJ , Tstg
2.4 417 -55 to +150
DEVICE MARKING
MMBT6427 = 1V
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(3) (I C = 10 mAdc, V BE = 0) Collector-Base Breakdown Voltage (I C = 100 Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = 10 Adc, I C = 0) Collector Cutoff Current (V
CE
V (BR)CEO V (BR)CBO V
(BR)EBO
40 40 12 -- -- --
-- -- -- 1.0 50 50
V V V A nA nA
= 25Vdc, I B = 0)
I CES I CBO I EBO
Collector Cutoff Current ( V CB = 30Vdc, I E = 0) Emitter Cutoff Current ( V EB = 10Vdc, I C= 0) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
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MMBT6427
ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued)
Characteristic Symbol hFE 10,000 20,000 14,000 VCE(sat)(3) -- -- V BE(sat) V
BE(on)
Min
Max
Unit --
ON CHARACTERISTICS
DC Current Gain (I C = 10 mAdc, V CE = 5.0 Vdc) (I C = 100 mAdc, V CE = 5.0Vdc) (I C = 500 mAdc, V CE = 5.0Vdc) Collector-Emitter Saturation Voltage (I C = 50 mAdc, I B = 0.5 mAdc) (I C = 500 mAdc, I B = 0.5 mAdc) Base-Emitter Saturation Voltage (I C = 500 mAdc, I B = 0.5 mAdc) Base-Emitter On Voltage (I C = 50 mAdc, V CE = 5.0Vdc) 100,000 200,000 140,000 V 1.2 1.5 2.0 1.75 V V
-- --
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB=0.5 Vdc, I C = 0 , f = 1.0 MHz) Current Gain-High Frequency (V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz)
(V CE=5.0 Vdc, I C = 1.0 mAdc , R S =100 k, f = 1.0 kHz )
C obo C
ibo
-- -- 1.3 --
7.0 15 -- 10
pF pF V dB
|h fe | NF
Noise Finure
3. Pulse Tent: Pulse Width = 300s, Duty Cycle = 2.0%
NOISE CHARACTERISTICS
(V CE = 5.0 Vdc, T A = 25C)
500
RS
in
e n , VOLTAGE (nV)
200 100
BANDWIDTH = 1.0 Hz ~ R S~ 0
en
IDEAL TRANSISTOR
10 A
50
100 A
20
I C = 1.0 mA
10 5.0 10 20 50 100 200 500 1k 2k 5k 10 k 20 k 50 k 100 k
Figure 1. Transistor Noise Model
f, FREQUENCY (Hz)
Figure 2. Noise Voltage
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MMBT6427
NOISE CHARACTERISTICS
(V CE = 5.0 Vdc, T A = 25C)
2.0 1.0 200
BANDWIDTH = 1.0 Hz
V T , TOTAL WIDEBAND NOISE VOLTAGE (nV)
i n , NOISE CURRENT (pA)
0.7 0.5 0.3 0.2
100 70 50 30 20
BANDWIDTH = 10 Hz TO 15.7 kHz I C = 10 A
I C = 1.0 mA
0.1 0.07 0.05 0.03 0.02 10 20 50 100 200
100 A 10 A
100 A
1.0 mA
10 1.0 2.0 5.0 10 20 50 100 200 500 1000
500
1k
2k
5k
10 k 20 k
50 k 100 k
f, FREQUENCY (Hz)
Figure 3. Noise Current
14 12
R S , SOURCE RESISTANCE (k)
Figure 4. Total Wideband Noise Voltage
BANDWIDTH = 10 Hz TO 15.7 kHz
SMALL-SIGNAL CHARACTERISTICS
20
NF, NOISE FIGURE (dB)
10 8.0
10 A
10
T J = 25C
C, CAPACITANCE (pF)
100 A
6.0 4.0 2.0 0
7.0 5.0
C ibo C obo
I C = 1.0 mA
3.0
1.0
2.0
5.0
10
20
50
100
200
500
1000
2.0 0.04
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
R S , SOURCE RESISTANCE (k)
Figure 5. Wideband Noise Figure
|h fe |, SMALL- SIGNAL CURRENT GAIN
V R , REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
SMALL-SIGNAL CHARACTERISTICS
4.0
SMALL-SIGNAL CHARACTERISTICS
200 100 70
V CE = 5.0 V
T J = 125C
h FE , DC CURRENT GAIN
2.0
f = 100 MHz T J = 25C
50 30 20 10 7.0 5.0 3.0 2.0
25C
1.0 0.8 0.6 0.4
-55C V CE = 5.0 V
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
5.0
7.0
10
20
30
50
70
100
200
300
500
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 7. High Frequency Current Gain
Figure 8. DC Current Gain
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MMBT6427
SMALL-SIGNAL CHARACTERISTICS
V CE , COLLECTOR- EMITTER VOLTAGE (VOLTS)
3.0 1.6
T J = 25C
2.5
T J = 25C
1.4
I C = 10 mA
50 mA
250 mA 500 mA
2.0
V, VOLTAGE (VOLTS)
V BE(sat) @ I C /I B = 1000
1.2
V BE(on) @ V CE = 5.0 V
1.0
1.5
1.0
0.8
V CE(sat) @ I C /I B = 1000
0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
0.6 5.0 7.0 10 20 30 50 70 100 200 300 500
I B , BASE CURRENT (A) R V , TEMPERATURE COEFFICIENTS (mV/C)
I C , COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
-1.0
Figure 10. "On" Voltages
*APPLIES FOR I C / I B < h FE /3.0 *R VC FOR V CE(sat)
25C TO 125C FIGURE A -55C TO 25C t PP
P
-2.0
-3.0
PP
25C TO 125C
-4.0
VB FOR V BE
-5.0
-55C TO 25C
t
1
-6.0 5.0 7.0 10 20 30 50 70 100 200 300 500
1/f tP PEAK PULSE POWER = P P DUTY CYCLE =t 1 f = t1
I C , COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
Design Note: Use of Transient Thermal Resistance Data
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k
D = 0.5 0.2 0.05 SINGLE PULSE
RESISTANCE (NORMALIZED)
r (t), TRANSIENT THERMAL
0.1
SINGLE PULSE
Z JC(t) = r(t) * R JC T J(pk) - T C = P (pk) Z JC(t) Z JA(t) = r(t) * R JA T J(pk) - T A = P (pk) Z JA(t)
t, TIME (ms)
Figure 12. Thermal Response
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MMBT6427
SOT-23 Package Outline Dimensions
A
Unit:mm
TOP VIEW
B
C
E
G H
D
K J L M
Dim Min Max A 0.35 0.51 B 1.19 1.80 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.60 L 0.30 0.61 M 0.076 0.25
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WEITRON
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