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CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 25 Volts
APPLICATION
* Servo motor control. * Power MOSFET gate drivers. * Other switching applications.
CHM75A3PAPT
CURRENT 60 Ampere
FEATURE
* Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability.
.280 (7.10) .238 (6.05) .220 (5.59) .195 (4.95)
TO-252A
.094 (2.40) .087 (2.20) .035 (0.89) .018 (0.45)
* N-Channel Enhancement
(1)
(3) (2)
.417 (10.6) .346 (8.80)
CONSTRUCTION
.261 (6.63) .213 (5.40)
.035 (0.90) .025 (0.64)
.102 (2.59) .078 (1.98)
1 Gate
.024 (0.61) .016 (0.40)
CIRCUIT
(1) G
D (3)
2 Source 3 Drain( Heat Sink )
S (2)
Dimensions in inches and (millimeters)
TO-252A
Absolute Maximum Ratings
Symbol Parameter
TA = 25C unless otherwise noted
CHM75A3PAPT
Units
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous
25
V V
20
60
ID - Pulsed PD TJ TSTG
(Note 3)
A 200 56 -55 to 150 -55 to 150 W C C
Maximum Power Dissipation at Tc = 25 C Operating Temperature Range Storage Temperature Range
Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RJA Thermal Resistance, Junction-to-Ambient (Note 1) 50 C/W
2007-06
ELECTRICAL CHARACTERISTIC ( CHM75A3PAPT )
Electrical Characteristics T
Symbol Parameter
A
= 25C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS IDSS I GSSF I GSSR
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage
VGS = 0 V, ID = 250 A VDS = 25 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V
25 1 +100 -100
V A nA nA
ON CHARACTERISTICS
(Note 2)
VGS(th) RDS(ON) g FS
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 A VGS=10V, ID=30A VGS=4.5V, ID=30A
1 7 10 12
3 9
V m
13 S
Forward Transconductance
VDS =10V, ID = 15A
Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V, VGS = 0V, f = 1.0 MHz 1180 270 145 pF
SWITCHING CHARACTERISTICS (Note 4)
Qg Qgs Q gd ton tr toff tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time
VDS=15V, ID=20A VGS=5V V DD= 15V ID =1A , VGS = 10 V RGEN= 6
10 3.6 2.9 12 4 32 6
13 nC
25 10 65 15 nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS VSD
Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS = 20A , VGS = 0 V 0.85
50 1.2
A V
RATING CHARACTERISTIC CURVES ( CHM75A3PAPT )
Typical Electrical Characteristics
Figure 1. Output Characteristics
100 100
Figure 2. Transfer Characteristics
V G S =1 0 , 8 , 6 , 4 V
80 80
I D , DRAIN CURRENT (A)
I D , DRAIN CURRENT (A)
60
60
40
40 J=125C T 20
VG S =3 . 0 V
20
TJ=25C TJ=-55C
0
0
3.0 2.0 1.0 V DS , DRAIN-TO-SOURCE VOLTAGE (V)
4.0
0
0
1.0
2.0
3.0
4.0
5.0
VGS , GATE-TO-SOURCE VOLTAGE (V)
Figure 3. Gate Charge
10 VDS=15V ID=20A 2.2
Figure 4. On-Resistance Variation with Temperature
VGS=10V ID=30A 1.9
VGS , GATE TO SOURCE VOLTAGE (V)
DRAIN-SOURCE ON-RESISTANCE
8
6
R DS(on) , NO RMALIZED
1.6
1.3
4
1.0
2
0.7
0 0 4 8 12 Qg , TOTAL GATE CHARGE (nC) 16 20
0.4 -100
-50
0 50 100 TJ , JUNCTION T EMPERATURE (C)
150
200
Figure 5. Gate Threshold Variation with Temperature
1.3 1.2 VDS=VGS ID=250uA
Vth , NORMALIZED GATE-SOURCE
THRESHOLD VOLTAGE
1.1 1.0 0.9 0.8
0.7 0.6 -50
-25
0 25 50 75 100 TJ , JUNCTION T EMPERATURE (C)
125
150

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