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| HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Features * Crest Factor (Peak-to-Average Power Ratio) Measurement * Envelope-to-Average Power Ratio Measurement * Dual channel and channel difference output ports * Excellent Channel Matching and Channel Isolation * Supports Controller Mode[1] * 1 dB Detection Accuracy to 3.9 GHz * Input Dynamic Range -55 dBm to +15 dBm * +5V Operation from -40 C to +85 C * Excellent Temperature Stability * Integrated Temperature Sensor * Power-Down Mode * 32 Lead 5x5mm SMT Package: 25mm2 12 POWER DETECTORS - SMT * RF Signal Wave Shape & Crest Factor Independent Typical Applications * Log -> Root - Mean - Square (RMS) Conversion * Transmitter Power Control * Receiver Automatic Gain Control * Antenna VSWR Monitor * Received Signal Strength Indication (RSSI) * Transmitter Signal Strength Indication (TSSI) * Dual Channel wireless infrastructure radio Functional Diagram [1] For more information regarding controller mode operation, please contact your Hittite sales representative or email sales@hittite.com 12 - 114 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz General Description The HMC714LP5E is a dual-channel RMS power detector designed for high accuracy RF power signal measurement and control applications over the 0.1 to 3.9 GHz frequency range. The device can be used with input signals having RMS values from -55 dBm to +15 dBm referenced to 50 and large crest factors with no accuracy degradation. Each RMS detection channel is fully specified for operation up to 3.9 GHz, over a wide dynamic range of 70 dB. The HMC714LP5E operates from a single +5V supply and provides two linear-in-dB detection outputs at the RMSA and RMSB pins with scaled slopes of 37 mV/dB. The RMSA and RMSB channel outputs provide RMS detection performance in terms of dynamic range, logarithmic linearity and temperature stability similar to Hittite's HMC614LPE RMS Detector. The RMSA and RMSB outputs provide a read of average input signal power, or true-RMS power. Frequency detection up to 5.8 GHz is possible, with excellent channel matching of less than 0.5 dB (for the single-ended configuration), over a wide range of input frequencies and with low temperature drift. The HMC714LP5E also provides "channel difference" output ports via pins OUTP and OUTN, permitting measurements of the input signal power ratio between the two power detection channels. These outputs may be used in single-ended or differential configurations. An input voltage applied to the VLVL input pin is used to set the common mode voltage reference level for OUTP and OUTN. On the Hittite evaluation board, the VLVL pin is shorted to VREF2 output to provide a nominal bias voltage of 2.5V; but any external bias voltage may be used to set VLVL. The HMC714LP5E also features INSA and INSB pins which provide a measurement of instantaneous signal power normalized to average power level in each channel. Reading both the INSA/INSB and RMSA/RMSB output voltage signals provides a very informative picture of the RF input signal; providing peak power, average power, peak-toaverage power, and RF wave shape. The device also includes a buffered PTAT temperature sensor output with a temperature scaling factor of 2.2 mV/C yielding a typical output voltage of 600 mV at 0C. The HMC714LP5E operates over the -40 to +85C temperature range, and is available in a compact, 32-lead 4x4 mm leadless QFN package 12 POWER DETECTORS - SMT 12 - 115 Electrical Specifi cations I, TA = +25C, VCCA = VCCB = VCCBIAS = 5V, CINT = 0.1 F Parameter Dynamic Range ( 1 dB measurement error) Input Signal Frequency Differential Input Configuration, Channel A Differential Input Configuration, Channel B Input Signal Frequency Single-Ended Input Configuration, Channel A Single-Ended Input Configuration, Channel B Channel Isolations Input Signal Frequency Input A to Input B Isolation (Baluns Macom ETC1-1-13 at both channels) Input A to RMS B Isolation (PIN B = -45 dBm, RMS B = RMSBINB 1 dB) Input B to RMSA Isolation (PINA = -45 dBm, RMSA = RMSAINA 1 dB) Input A to RMS B Isolation (PIN B = -40 dBm, RMS B = RMSBINB 1 dB) Input B to RMSA Isolation (PINA=-40 dBm, RMSA=RMSAINA 1 dB) 100 72 500 70 60+ 60+ 900 69 56 58 1900 53 46 46 2200 51 44 44 3000 56 47 48 47 43 39 28 3500 48 3900 47 MHz dB dB dB dB dB 100 68 68 100 70 70 500 68 69 900 62 62 900 69 69 1900 72 71 2200 71 71 3000 66 64 3500 47 45 3900 42 41 MHz dB dB MHz dB dB Typ. Typ. Typ. Typ. Typ. Typ. Typ. Typ. Units 1800 300 71 71 2200 300 69 69 3600 300 61 61 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Electrical Specifi cations II, TA = +25C, VCCA = VCCB = VCCBIAS = 5V, CINT = 0.1 F Parameter Typ. Typ. Typ. Typ. Typ. Typ. Typ. Typ. Units Deviation vs Temperature: (Over full temperature range -40C to 85C. Deviation is measured from reference, which is CW input at 25C Differential Input Interface with 1:1 Balun Transformer (over full input frequency range) Wideband Single-Ended Input Interface suitable for input signal frequencies below 1000 MHz Tuned Single-Ended Input Interface Suitable for input signal frequencies above 1000 MHz 0.6 0.5 0.6 dB dB dB Modulation Deviation (Deviation measured from reference, which is measured with CW input at equivalent input signal power, VTGT=2V) Input Signal Frequency 256QAM (2 Mbps, 8dB Crest Factor) 100 -0.13 -0.3 -0.5 500 -0.1 -0.2 -0.5 900 -0.1 -0.2 -0.4 1900 -0.1 -0.2 -0.4 2200 -0.1 -0.2 -0.3 3000 -0.1 -0.2 -0.4 3500 -0.3 -0.2 -0.4 3900 -0.3 -0.2 -0.4 MHz mV/dB dBm dBm 12 POWER DETECTORS - SMT WCDMA Single Carrier (Test Model 1 with 64DPCH) WCDMA 2 Carrier (Test Model 1 with 64DPCH) Modulation Deviation (Deviation measured from reference, which is measured with CW input at equivalent input signal power, VTGT=1V) Input Signal Frequency 256QAM (2 Mbps, 8dB Crest Factor) WCDMA Single Carrier (Test Model 1 with 64DPCH) WCDMA 2 Carrier (Test Model 1 with 64DPCH) 100 0.1 -0.1 -0.1 500 0.1 -0.1 -0.1 900 0.1 -0.1 -0.1 1900 0.1 -0.1 -0.1 2200 0.1 -0.1 -0.1 3000 0.1 -0.1 -0.1 3500 -0.2 -0.1 -0.1 3900 -0.1 -0.1 -0.1 MHz dB dB dB Differential Input Configuration Logarithmic Slope and Intercept Input Signal Frequency Logarithmic Slope Logarithmic Intercept Max. Input Power at +-1dB Error Min. Input Power at +-1dB Error 100 37.3 -70 12 -56 500 37.1 -70 14 -55 900 37 -69.5 13 -56 1900 36 -72 15 -56 2200 36 -71.5 15 -56 3000 36.1 -68.5 13 -52 3500 36.2 -68.5 -5 -52 3900 38.2 -64 -8 -49 MHz mV/dB dBm dBm dBm Single Ended Input Configuration Logarithmic Slope and Intercept Input Signal Frequency Logarithmic Slope Logarithmic Intercept Max. Input Power at +-1dB Error Min. Input Power at +-1dB Error 100 38.2 -67 14 -56 900 37.9 -67.5 6 -56 1800 300 36.6 -67 15 -56 2200 300 35.4 -67 15 -54 3600 300 36.8 -64.5 12 -49 MHz mV/dB dBm dBm dBm iPAR Feature: INS[A,B] outputs follow Amplitude Modulated Envelope Power, scaled to Average (RMS) Signal Power INS[A,B] and IREF[A,B] are measured with Rext = 3.9 k and 50 k active scope probe IREF[A,B] Output Voltage INS[A,B] Output Voltage, with CW Input Signal (EAR = 1: Reference Condition)[1] INS[A,B] Scaling Factor (SF) with VTGT = 2V INS[A,B] Scaling Factor (SF) with VTGT = 1V INS[A,B] Output: Variation over Temperature (-40C to 85C) INS[A,B] Output: 3 dB Video BW [1] EAR: Amplitude Modulated Envelope Signal Power-to-Average (RMS) Signal Power Ratio; EAR = 1 for CW signals 1.6 1.6 190 95 2 35 V V mV mV % MHz 12 - 116 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz RMS [A,B] Error vs. Pin with Different Modulations @ 1900 MHz, VTGT= 1V 2 1.5 1 ERROR (dB) 0.5 0 -0.5 -1 -1.5 -2 -60 CW WCDMA 1 Carrier WCDMA 2 Carrier 256QAM RMS [A,B] vs. Pin with Different Modulations @ 1900 MHz, VTGT= 1V 4 3.5 3 RMSA (RMSB) (V) 2.5 2 1.5 1 0.5 0 -60 Ideal CW WCDMA1 Carrier WCDMA 2 Carrier 256QAM -50 -40 -30 -20 -10 0 10 -50 -40 -30 -20 -10 0 10 12 POWER DETECTORS - SMT 12 - 117 INPUT POWER (dBm) INPUT POWER (dBm) Logarithmic Error wrt to CW Response @ 1900 MHz for Different Modulation Schemes, VTGT= 1V 1.2 1 0.8 0.6 0.4 WCDMA 1 Carrier WCDMA 2 Carrier 256QAM Logarithmic Error wrt to CW Response @ 1900 MHz for Different Modulation Schemes, VTGT= 2V 2 WCDMA 1 Carrier WCDMA 2 Carrier 256QAM 1.5 ERROR (dB) ERROR (dB) 1 0.5 0.2 0 -60 0 -60 -50 -40 -30 -20 -10 0 10 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) Table 3: Electrical Specifi cations III, HMC714LP5E Differential Confi guration, TA=25C, VCCA = VCCB = VCCBIAS = 5V, Cint = 0.1 uF, unless otherwise noted Parameter Differential Input Configuration Input Network Return Loss Input Resistance between INPA and INNA Input Resistance between INPB and INN B Input Voltage Range RMSOUT [A,B] Output Output Voltage Range Openloop Output Voltage Range Source/Sink Current Compliance Output Slew Rate (rise/fall) RL = 1kOhm, CL = 4.7pF [2] RMS-VSET disconnected for control applications Measured with 900 MHz input RF signal at -30 dBm power With CINT=0, Cofs=0 0.4 to 3.2 0.4 to Vcc-1 10/1.1 110/6 V V mA 10 V/sec 6 Conditions Min. Typ. Max. Units up to 2.5 GHz[1] Between pins 2 and 3 Between pins 6 and 7 VDIFFINA = VINPA - VINNA and VDIFFINB = VINPB -VINNB > 10 220 220 2.25 dB Ohms Ohms V For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Table 3: Electrical Specifi cations III, HMC714LP5E Differential Confi guration, TA=25C, VCCA = VCCB = VCCBIAS = 5V, Cint = 0.1 uF, unless otherwise noted Parameter VSET [A,B] Outputs Input Voltage Range [2] Input Resistance OUTP and OUTN Outputs Output Voltage Range Openloop Output Voltage Range RL=1kOhm, CL=4.7pF [2] OUTP-FBKA and OUTN-FBKB disconnected for control applications Measured with 900 MHz input RF signal at -30 dBm power 1 to 3.9 0.1 to Vcc-0.9 20/4.2 V V mA For control applications with nominal slope/intercept settings 0.4 to 3.2 15 V kOhm Conditions Min. Typ. Max. Units 12 POWER DETECTORS - SMT Source/Sink Current Compliance VLVL , Common Mode Reference Level for OUT[P,N] Voltage Range Input Resistance VREF2 , Voltage Reference Output Output Voltage Temperature Sensitivity Source/Sink Current Compliance VREF3 , Voltage Reference Output Output Voltage Temperature Sensitivity Source/Sink Current Compliance TEMP, Temperature Sensor Output Output Voltage Temperature Sensitivity Source/Sink Current Compliance ENX Logic Input, Power Down Control Input High Voltage Input Low Voltage Input Capacitance Power Supply Supply Voltage Supply Current with no input power 115 mA nominal at -40C; 153mA nominal at 85C 128 mA nominal at -40C; 166mA nominal at 85C 4.5 5 138 5.5 V mA 0.5 0.7*VCC 0.3*VCC V V pF measured at 0C 0.6 2.2 1.7 / 0.5 V mV/C mA 2.94 0.15 0.15 / 0.7 V mV/C mA 2.43 0.15 5.5 / 2.6 V mV/C mA OUT[P,N]=FBK[A,B] 0 6 5 V kOhm Supply Current with 0dBm at one channel Supply Current with 0dBm at both channels Standby Mode Supply Current 150 mA 164 6.5 mA mA [1] Performance of differential input configuration is limited by the balun. Baluns used are M/A-COM ETC1-1-13 specified 4.5 MHz to 3000 MHz [2] For nominal slope/intercept setting, please see application section to change this range 12 - 118 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz RMSA & Error vs. Pin @ 100 MHz [1] 4 Ideal RMSA +25C RMSA +85C RMSA - 40C RMSB & Error vs. Pin @ 100 MHz [1] 4 3 2 ERROR (dB) RMSB (V) 1 3 4 Ideal RMSB +25C RMSB +85C RMSB - 40C 4 3 2 ERROR (dB) 1 3 RMSA (V) 2 0 -1 2 0 -1 1 ERR +25C ERR +85C ERR - 40C -2 -3 -4 -50 -40 -30 -20 -10 0 10 1 ERR +25C ERR +85C ERR - 40C -2 -3 -4 -50 -40 -30 -20 -10 0 10 0 -60 0 -60 12 POWER DETECTORS - SMT 12 - 119 INPUT POWER (dBm) INPUT POWER (dBm) RMSA & Error vs. Pin @ 500 MHz [1] 4 Ideal RMSA +25C RMSA +85C RMSA - 40C RMSB & Error vs. Pin @ 500 MHz [1] 4 3 2 ERROR (dB) RMSB (V) 1 3 4 Ideal RMSB +25C RMSB +85C RMSB - 40C 4 3 2 ERROR (dB) 1 3 RMSA (V) 2 0 -1 2 0 -1 1 ERR +25C ERR +85C ERR - 40C -2 -3 -4 -50 -40 -30 -20 -10 0 10 1 ERR +25C ERR +85C ERR - 40C -2 -3 -4 0 -60 0 -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) RMSA & Error vs. Pin @ 900 MHz [1] 4 Ideal RMSA +25C RMSA +85C RMSA - 40C RMSB & Error vs. Pin @ 900 MHz [1] 4 3 2 ERROR (dB) RMSB (V) 1 3 4 Ideal RMSB +25C RMSB +85C RMSB - 40C 4 3 2 ERROR (dB) 1 3 RMSA (V) 2 0 -1 2 0 -1 1 ERR +25C ERR +85C ERR - 40C -2 -3 -4 -50 -40 -30 -20 -10 0 10 1 ERR +25C ERR +85C ERR - 40C -2 -3 -4 -50 -40 -30 -20 -10 0 10 0 -60 0 -60 INPUT POWER (dBm) INPUT POWER (dBm) [1] CW Input Waveform For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz RMSA & Error vs. Pin @ 1900 MHz [1] 4 Ideal RMSA +25C RMSA +85C RMSA - 40C RMSB & Error vs. Pin @ 1900 MHz [1] 4 3 2 ERROR (dB) RMSB (V) 1 3 4 Ideal RMSB +25C RMSB +85C RMSB - 40C 4 3 2 ERROR (dB) 1 3 RMSA (V) 2 0 -1 2 0 -1 1 -2 ERR +25C ERR +85C ERR - 40C 1 12 POWER DETECTORS - SMT -3 -4 0 -60 -50 -40 -30 -20 ERR +25C ERR +85C ERR - 40C -2 -3 -4 0 -60 -50 -40 -30 -20 -10 0 10 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) RMSA & Error vs. Pin @ 2200 MHz [1] 4 Ideal RMSA +25C RMSA +85C RMSA - 40C RMSB & Error vs. Pin @ 2200 MHz [1] 4 4 Ideal RMSB +25C RMSB +85C RMSB - 40C 4 3 2 ERROR (dB) 1 3 RMSA (V) 2 ERROR (dB) RMSB (V) 3 2 0 2 0 -1 1 ERR +25C ERR +85C ERR - 40C -2 1 ERR +25C ERR +85C ERR - 40C -2 -3 -4 0 -60 -50 -40 -30 -20 -10 0 10 -4 0 -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) RMSA & Error vs. Pin @ 3000 MHz [1] 4 Ideal RMSA +25C RMSA +85C RMSA - 40C RMSB & Error vs. Pin @ 3000 MHz [1] 4 3 2 ERROR (dB) RMSB (V) 1 3 4 Ideal RMSB +25C RMSB +85C RMSB - 40C 4 3 2 ERROR (dB) 1 3 RMSA (V) 2 0 -1 2 0 -1 1 ERR +25C ERR +85C ERR - 40C -2 -3 -4 -50 -40 -30 -20 -10 0 10 1 ERR +25C ERR +85C ERR - 40C -2 -3 -4 -50 -40 -30 -20 -10 0 10 0 -60 0 -60 INPUT POWER (dBm) INPUT POWER (dBm) [1] CW Input Waveform 12 - 120 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz RMSA & Error vs. Pin @ 3500 MHz [1] 4 Ideal RMSA +25C RMSA +85C RMSA - 40C RMSB & Error vs. Pin @ 3500 MHz [1] 4 3 2 ERROR (dB) RMSB (V) 1 3 4 Ideal RMSB +25C RMSB +85C RMSB - 40C 4 3 2 ERROR (dB) 1 3 RMSA (V) 2 0 -1 2 0 -1 1 ERR +25C ERR +85C ERR - 40C -2 -3 -4 -50 -40 -30 -20 -10 0 10 1 ERR +25C ERR +85C ERR - 40C -2 -3 -4 -50 -40 -30 -20 -10 0 10 0 -60 0 -60 12 POWER DETECTORS - SMT 12 - 121 INPUT POWER (dBm) INPUT POWER (dBm) RMSA & Error vs. Pin @ 3900 MHz [1] 4 Ideal RMSA +25C RMSA +85C RMSA - 40C RMSB & Error vs. Pin @ 3900 MHz [1] 4 3 2 ERROR (dB) RMSB (V) 1 3 4 Ideal RMSB +25C RMSB +85C RMSB - 40C 4 3 2 ERROR (dB) 1 3 RMSA (V) 2 0 -1 2 0 -1 1 ERR +25C ERR +85C ERR - 40C -2 -3 -4 -50 -40 -30 -20 -10 0 10 1 ERR +25C ERR +85C ERR - 40C -2 -3 -4 -50 -40 -30 -20 -10 0 10 0 -60 0 -60 INPUT POWER (dBm) INPUT POWER (dBm) OUT [P,N] & Error vs. Pin @ 100 MHz, INPA Power Swept, INPB Fixed Power @ -25 dBm [1] 4 Out N 3 OUT[P,N](V) Out P 2 4 OUT [P,N] & Error vs. Pin @ 500 MHz, INPA Power Swept, INPB Fixed Power @ -25 dBm [1] 4 Out N 3 OUT[P,N](V) ERROR (dB) Out P 2 ERROR (dB) 4 2 0 2 0 1 Out P Err +25C Out P Err +85C Out P Err -40C Out N Err +25C Out N Err +85 C Out N Err -40C -2 1 Out P Err +25C Out P Err +85C Out P Err -40C Out N Err +25C Out N Err +85 C Out N Err -40C -2 0 -60 -50 -40 -30 -20 -10 0 10 -4 0 -60 -50 -40 -30 -20 -10 0 10 -4 INPUT POWER (dBm) INPUT POWER (dBm) [1] CW Input Waveform For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz OUT [P,N] & Error vs. Pin @ 1900 MHz, INPA Power Swept, INPB Fixed Power @ -25 dBm [1] 4 Out N 2 OUT[P,N] (V) ERROR (dB) 3 Out P 2 ERROR (dB) 4 OUT [P,N] & Error vs. Pin @ 900 MHz, INPA Power Swept, INPB Fixed Power @ -25 dBm [1] 4 Out N 3 OUT[P,N](V) Out P 4 2 0 2 0 1 12 POWER DETECTORS - SMT Out P Err +25C Out P Err +85C Out P Err -40C Out N Err +25C Out N Err +85 C Out N Err -40C -2 1 Out P Err +25C Out P Err +85C Out P Err -40C Out N Err +25C Out N Err +85 C Out N Err -40C -2 0 -60 -50 -40 -30 -20 -10 0 10 -4 0 -60 -50 -40 -30 -20 -10 0 10 -4 INPUT POWER (dBm) INPUT POWER (dBm) OUT [P,N] & Error vs. Pin @ 2200 MHz, INPA Power Swept, INPB Fixed Power @ -25 dBm [1] 4 Out N 3 OUT[P,N](V) Out P 2 4 OUT [P,N] & Error vs. Pin @ 3000 MHz, INPA Power Swept, INPB Fixed Power @ -25 dBm [1] 4 Out N 3 OUT[P,N](V) ERROR (dB) Out P 2 ERROR (dB) 4 2 0 2 0 1 Out P Err +25C Out P Err +85C Out P Err -40C Out N Err +25C Out N Err +85 C Out N Err -40C -2 1 Out P Err +25C Out P Err +85C Out P Err -40C Out N Err +25C Out N Err +85 C Out N Err -40C -2 0 -60 -50 -40 -30 -20 -10 0 10 -4 0 -60 -50 -40 -30 -20 -10 0 10 -4 INPUT POWER (dBm) INPUT POWER (dBm) OUT [P,N] & Error vs. Pin @ 3500 MHz, INPA Power Swept, INPB Fixed Power @ -25 dBm [1] 4 Out N 3 OUT[P,N](V) Out P 2 4 OUT [P,N] & Error vs. Pin @ 3900 MHz, INPA Power Swept, INPB Fixed Power @ -25 dBm [1] 4 Out N 3 OUT[P,N] (V) ERROR (dB) Out P 2 ERROR (dB) 4 2 0 2 0 1 Out P Err +25C Out P Err +85C Out P Err -40 C Out N Err +25C Out N Err +85C Out N Err -40 C -2 1 0 -60 -50 -40 -30 -20 -10 0 10 -4 Out P Err +25C Out P Err +85C Out P Err -40 C Out N Err +25C Out N Err +85C Out N Err -40 C -2 0 -60 -50 -40 -30 -20 -10 0 10 -4 INPUT POWER (dBm) INPUT POWER (dBm) [1] CW Input Waveform 12 - 122 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 500 MHz [1][2] 60 40 RMSA-RMSB (mV) 20 0 -20 -40 -60 -55 +25C +85C -40C RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 100 MHz [1][2] 60 40 RMSA-RMSB (mV) 20 0 -20 -40 -60 -55 +25C +85C -40C -45 -35 -25 -15 -5 5 15 -45 -35 -25 -15 -5 5 15 12 POWER DETECTORS - SMT 12 - 123 Input Power (dBm) Input Power (dBm) RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 900 MHz [1][2] 60 40 RMSA-RMSB (mV) 20 0 -20 -40 -60 -55 +25C +85C -40C RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 1900 MHz [1][2] 60 40 RMSA-RMSB (mV) 20 0 -20 -40 -60 -55 +25C +85C -40C -45 -35 -25 -15 -5 5 15 -45 -35 -25 -15 -5 5 15 Input Power (dBm) Input Power (dBm) RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 2200 MHz [1][2] 60 40 RMSA-RMSB (mV) 20 0 -20 -40 -60 -55 +25C +85C -40C RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 3000 MHz [1][2] 60 40 RMSA-RMSB (mV) 20 0 -20 -40 -60 -55 +25C +85C -40C -45 -35 -25 -15 -5 5 15 -45 -35 -25 -15 -5 5 15 Input Power (dBm) Input Power (dBm) [1] CW Input Waveform [2] Differential Input Configuration. Baluns selected for matching performance, mismatch between channels is limited by the input baluns. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 3900 MHz [1][2] 80 60 RMSA-RMSB (mV) 40 20 0 -20 -40 -60 -80 -55 +25C +85C -40C RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 3500 MHz [1][2] 80 60 RMSA-RMSB (mV) 40 20 0 -20 -40 +25C +85C -40C 12 POWER DETECTORS - SMT -60 -80 -55 -45 -35 -25 -15 -5 5 15 -45 -35 -25 -15 -5 5 15 Input Power (dBm) Input Power (dBm) Interference to an Input Signal (INB Power Fixed) with Interfering Signal on the other Channel (INA Power Swept) [1] 6 5 4 Error (dB) 3 2 1 0 -30 0.5GHz 0.9GHz 1.9GHz 2.2GHz 3.0GHz 3.9GHz Interference to an Input Signal (INA Power Fixed) with Interfering Signal on the other Channel (INB Power Swept) [1] 6 5 4 Error (dB) 3 2 1 0 -30 0.5GHz 0.9GHz 1.9GHz 2.2GHz 3.0GHz 3.9GHz Channel B fixed at -45dBm for f<3GHz -40dBm for f=3.9GHz Channel A fixed at -45dBm for f<3GHz -40dBm for f=3.9GHz -25 -20 -15 -10 -5 0 5 10 15 -25 -20 -15 -10 -5 0 5 10 15 Input Power (dBm) Input Power (dBm) RMSA Out vs. Pin over Frequency, with SE Wideband Tune [1] 4 3.5 3 RMSA(V) 2.5 2 1.5 1 0.5 0 -60 Ideal 100MHz 300MHZ 500MHz 700MHz 900MHz RMSA Out Error vs. Pin over Frequency, with SE Wideband Tune [1] 4 3 2 ERROR (dB) 1 0 -1 -2 -3 -4 -60 100MHz 300MHz 500MHz 700MHz 900MHz -50 -40 -30 -20 -10 0 10 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) [1] CW Input Waveform [2] Differential Input Configuration. Baluns selected for matching performance, mismatch between channels is limited by the input baluns. 12 - 124 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 500 MHz, with SE Wideband Tune [1] 60 40 RMSA-RMSB (mV) 20 0 -20 -40 -60 -55 25 85C -40C RMSA-RMSB, Channel Matching vs. Pin over Frequency, with SE Wideband Tune [1] 60 100MHz 40 RMSA-RMSB (V) 20 0 -20 -40 -60 -50 300MHz 500MHz 700MHz 900MHz 12 -45 -35 -25 -15 -5 5 15 Input Power (dBm) -40 -30 -20 -10 0 10 INPUT POWER (dBm) RMSA Out & Error vs. Pin over Temperature @ 500 MHz with SE Wideband Tune [1] 4 Ideal RMSA +25C RMSA +85C RMSA - 40C RMSA Out vs. Pin over Frequency , with 2200 MHz SE Tune [1] 4 3 2 ERROR (dB) RMSA (V) 1 4 3.5 3 2.5 2 1.5 1 0.5 0 -60 Ideal 1900MHz 2000MHZ 2100MHz 2200MHz 2300MHz 2400MHz 2500MHz 3 RMSA (V) 2 0 -1 1 ERR +25C ERR +85C ERR - 40C -2 -3 -4 -50 -40 -30 -20 -10 0 10 0 -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) RMSA Out Error vs. Pin over Frequency with 2200 MHz SE Tune [1] 4 3 2 ERROR (dB) 1 0 -1 -2 -3 -4 -60 1900MHz 2000MHz 2100MHz 2200MHz 2300MHz 2400MHz 2500MHz RMSA-RMSB, Channel Matching vs. Pin over Frequency, with 2200 MHz SE Wideband Tune [1] 60 40 RMSA-RMSB (V) 20 0 -20 -40 -60 -50 1900MHz 2000MHz 2100MHz 2200MHz 2300MHz 2400MHz 2500MHz -50 -40 -30 -20 -10 0 10 -40 -30 -20 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) [1] CW Input Waveform For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 12 - 125 POWER DETECTORS - SMT HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz RMSA Out & Error vs. Pin over Temperature @ 2200 MHz, with 2200 MHz SE Tune [1] 4 4 Ideal RMSA +25C RMSA +85C RMSA - 40C RMSA-RMSB, Channel Matching vs. Pin over Temperature, with 2200 MHz SE Tune [1] 60 40 RMSA-RMSB (mV) 20 25 85C -40C 3 2 ERROR (dB) 1 3 RMSA (V) 0 -20 2 0 -1 1 -2 ERR +25C ERR +85C ERR - 40C 12 POWER DETECTORS - SMT -40 -60 -55 0 -45 -35 -25 -15 -5 5 15 -60 -50 -40 -30 -20 -3 -4 -10 0 10 Input Power (dBm) INPUT POWER (dBm) RMSA Out vs. Pin over Frequency, with 1800 MHz SE Tune [1] 4 3.5 3 RMSA (V) 2.5 2 1.5 1 0.5 0 -60 Ideal 1500MHz 1600MHZ 1700MHz 1800MHz 1900MHz 2000MHz 2100MHz RMSA Out Error vs. Pin over Frequency, with 1800 MHz SE Tune [1] 4 3 2 ERROR (dB) 1 0 -1 -2 -3 -4 -60 1500MHz 1600MHz 1700MHz 1800MHz 1900MHz 2000MHz 2100MHz -50 -40 -30 -20 -10 0 10 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) RMSA-RMSB, Channel Matching vs. Pin over Frequency, with 1800 MHz SE Tune [1] 60 40 RMSA-RMSB (V) 20 0 -20 -40 -60 -50 1500MHz 1600MHz 1700MHz 1800MHZ 1900MHz 2000MHz 2100MHz RMSA Out vs. Pin over Frequency, with 3600 MHz SE Tune [1] 4 3.5 3 RMSA (V) 2.5 2 1.5 1 0.5 0 -60 Ideal 3300MHz 3400MHZ 3500MHz 3600MHz 3700MHz 3800MHz 3900MHz -40 -30 -20 -10 0 10 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) [1] CW Input Waveform 12 - 126 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz RMSA - RMSB, Channel Matching vs. Pin over Temperature, with 3600 MHz SE Tune[1] 60 40 RMSA-RMSB (V) 20 0 -20 -40 -60 -50 3300MHz 3400MHz 3500MHz 3700MHz 3600MHZ 3800MHz 3900MHz RMSA Out Error vs. Pin over Frequency, with 3600 MHz SE Tune[1] 4 3 RMSA ERROR (dB) 2 1 0 -1 -2 -3 -4 -60 3300MHz 3400MHz 3500MHz 3600MHz 3700MHz 3800MHz 3900MHz -50 -40 -30 -20 -10 0 10 -40 -30 -20 -10 0 10 12 POWER DETECTORS - SMT 12 - 127 INPUT POWER (dBm) INPUT POWER (dBm) Intercept vs. Frequency Over Supply Voltage[1] -50 -55 INTERCEPT (dBm) -60 -65 -70 -75 -80 0 500 1000 1500 2000 2500 3000 3500 4000 FREQUENCY (MHz) 4.5V 5.0V 5.5V Intercept vs. Frequency Over Temperature[1] -50 -55 INTERCEPT (dBm) -60 -65 -70 -75 -80 0 500 1000 1500 2000 2500 3000 3500 4000 FREQUENCY (MHz) +25C +85C -40C Slope vs. Frequency Over Supply Voltage[1] 50 Slope vs. Frequency Over Temperature[1] 50 45 SLOPE (mV/dB) 40 SLOPE (mV/dB) 4.5V 5.0V 5.5V 45 +25C +85C -40C 40 35 35 30 0 500 1000 1500 2000 2500 3000 3500 4000 FREQUENCY (MHz) 30 0 500 1000 1500 2000 2500 3000 3500 4000 FREQUENCY (MHz) [1] CW Input Waveform For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz RMS Error vs. Crest Factor Over VTGT 0 -0.5 -1 -1.5 -2 -2.5 VTGT=0.5V VTGT=1V VTGT=2V VTGT=3V Input Return Loss [1] 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 Defined in large part by balun: M/A-Com balun#ETC1-1-113; 4.5MHz to 3000MHz 25C +85C -40C 12 POWER DETECTORS - SMT RMSA/RMSB ERROR (dB) -3 0 2 4 6 8 10 12 14 -40 0 CREST FACTOR (dB) 1 2 FREQUENCY (GHz) 3 4 iPAR Output & Input RF Signal Envelope vs. Time for an Input Crest Factor of 9.03 dB @ 1900 MHz [2] 2.25 IPAR Output iPAR Output with an Input Crest Factor of 9.03 dB, Channel [A,B] @ 1900 MHz [2] 2.5 INPUT RF SIGNAL ENVELOPE (V) CHANNEL A CHANNEL B 1.5 1.75 INS [A,B] (V) 1 1.25 0.5 0.75 0 INS [A,B] (V) 2 1.5 0.25 Input RF Signal Envelope -0.5 1 2 3 Time (usec) 4 5 1 0 1 2 3 TIME (us) 4 5 0 iPAR Output & Input RF Signal Envelope vs. Time for an Input Crest Factor of 12.04 dB @ 1900 MHz [2] 2.8 2.4 INS [A,B] (V) 2 1.6 1.2 0.8 0.4 Input RF Signal Envelope IPAR Output iPAR Output with an Input Crest Factor of 12.04 dB, Channel [A,B] @ 1900 MHz [2] 3 INPUT RF SIGNAL ENVELOPE (V) 4.2 3.4 2.6 1.8 1 0.2 -0.6 0 1 2 3 4 TIME (s) 5 6 7 8 -1.4 2.5 INS [A,B] (V) 2 1.5 CHANNEL A CHANNEL B 0 1 0 1.6 3.2 4.8 TIME (us) 6.4 8 [1] CW Input Waveform [2] RF Input Power @ -20 dBm 12 - 128 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz iPAR Output with an Input Crest Factor of 9.03 dB, Channel B over Temp @ 1900 MHz [1] 2.5 iPAR Output with an Input Crest Factor of 9.03 dB, Channel A over Temp @ 1900 MHz [1] 2.5 INSA (V) INSB (V) 1.5 +25C +85C -40C +25C +85C -40C 2 2 1.5 1 0 1 2 3 TIME (us) 4 5 1 0 1 2 3 TIME (us) 4 5 12 POWER DETECTORS - SMT 12 - 129 iPAR Output with an Input Crest Factor of 12.04 dB, Channel A over Temp @ 1900 MHz [1] 3.5 +25C +85C -40C iPAR Output with an Input Crest Factor of 12.04 dB, Channel B over Temp @ 1900 MHz [1] 3.5 +25C +85C -40C 3 3 INSA (V) 2 INSB (V) 0 1.6 3.2 4.8 TIME (us) 6.4 8 2.5 2.5 2 1.5 1.5 1 1 0 1.6 3.2 4.8 TIME (us) 6.4 8 iPAR Feature Peak-to-Average Power Detection Confi guration (REXT = 500k, CEXT = 100 nF) 3.4 3.2 3 2.8 INSA (V) INSA Linear Fit iPAR Feature Peak-to-Average Power Detection Confi guration (CEXT = 100 nF) 3.4 3.2 3 2.8 INSA (V) 2.6 2.4 2.2 Single Tone (CW) Inputs VTGT=2V Rext=100kohm VTGT=2V Rext=500kohm VTGT=1V Rext=500kohm 2.6 VTGT=2V 256QAM (1Mbps) Crest Factor~7.8dB 2.4 2.2 2 1.8 Single Tone (CW) Inputs VTGT=1V 2 1.8 1.6 1 2 3 4 5 6 7 8 9 10 11 12 1.6 2 3 4 5 6 7 8 9 10 11 INPUT CREST FACTOR (dB) 12 13 14 PEAK TO AVERAGE POWER RATIO (PAR) [1] RF Input Power @ -20 dBm For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Output Response Rise Time @ 1900 MHz, CINT [A,B] = 10 nF 3 2.5 2 1.5 1 0.5 0 10dBm 0dBm -10dBm -20dBm -30dBm Output Response Rise Time @ 1900 MHz, CINT [A,B] = Open 4 3.5 3 RMS[A,B] (V) 2.5 2 1.5 1 10dBm 0dBm -10dBm -20dBm -30dBm 12 POWER DETECTORS - SMT 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 TIME (s) RMS[A,B] (V) 0 5 10 15 20 25 30 35 40 45 50 TIME (s) Output Response Fall Time @ 1900 MHz, CINT [A,B] = Open 3 2.5 2 1.5 1 0.5 0 0 1 2 3 4 5 TIME (s) 6 7 8 9 10 10dBm 0dBm -10dBm -20dBm -30dBm Output Response Fall Time @ 1900 MHz, CINT [A,B] = 10 nF 3 2.5 2 1.5 1 0.5 0 0 20 40 60 80 100 120 140 160 180 200 TIME (s) 10dBm 0dBm -10dBm -20dBm -30dBm RMS[A,B] (V) Absolute Maximum Ratings Supply Voltage RF Input Power Channel / Junction Temperature Continuous Pdiss (T = 85C) (Derate 50 mW/C above 85C) Thermal Resistance (Rth) (junction to ground paddle) Storage Temperature Operating Temperature 5.6V 20 dBm 125 C 2 Watts 20 C/W -65 to +150 C -40 to +85 C RMS[A,B] (V) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 12 - 130 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Outline Drawing 12 POWER DETECTORS - SMT Package Marking [3] H714 XXXX H714 XXXX NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HMC APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. Package Information Part Number HMC714LP5 HMC714LP5E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] [2] [1] Max peak reflow temperature of 235 C [2] Max peak reflow temperature of 260 C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 12 - 131 HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Pin Descriptions Pin Number Function Description Interface Schematic 1, 5, 8 VCCA, VCCBIAS, VCCB Bias Supply. Connect supply voltage to these pins with appropriate filtering. 12 POWER DETECTORS - SMT 2, 3 GND Package bottom has an exposed metal paddle that must be connected to RF/DC ground. INPA, INNA Channel A RF Inputs, Connect RF to INNA through a 1:1 balun for differential configuration. 6, 7 INNB, INPB Channel B RF Inputs, Connect RF to INNB through a 1:1 balun for differential configuration. 4 ENX Disable pin. Connect to GND for normal operation. Applying voltage V > 0.8 Vcc will initiate power saving mode. 9, 32 COFB, COFA Input high pass filter capacitor. Connect to common via a capacitor to determine 3 dB point of input signal high-pass filter. See Application Note section. 10, 11 N/C These pins are not connected internally. 12 - 132 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Pin Descriptions (Continued) Pin Number Function Description Interface Schematic 12 VREF2 2.5V Reference voltage output. 13 VLVL Reference level input for OUTP and OUTN. Connect to VREF for normal operation. 12 POWER DETECTORS - SMT 12 - 133 14, 27 CINTB, CINTA Connection for ground referenced loop filter integration capacitor for channels A and B. See application schematic. 15, 26 IREFB, IREFA Reference DC Voltage for INSB - INSA to replicate voltage at no input modulation case. 16, 25 INSB, INSA Instantaneous Power Output for channels A and B continuous tracking of Input Power Envelope. 17, 26 VSETB, VSETA VSET inputs. Set point inputs for controller mode. 18, 23 RMSB, RMSA Logarithmic outputs that convert the input power to a DC level for channel A and channel B. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Pin Descriptions (Continued) Pin Number 19 Function FBKB Description Feedback through 3.5K Ohms to the negative terminal of the integrated Op Amp driving OUTN Output providing the difference of RMS outputs using an Op Amp. For normal operation, connected to FBKB to provide the function: OUTN = RMSB - RMSA + VLVL Output providing the difference of RMS outputs using an Op Amp. For normal operation, connected to FBKA to provide the function: OUTP = RMSA - RMSB + VLVL Interface Schematic 20 OUTN 21 OUTP 12 POWER DETECTORS - SMT 22 FBKA Feedback through 3.5K Ohms to the negative terminal of the integrated Op Amp driving OUTP 28 VTGT This voltage input changes the logarithmic intercept point. Use of lower target voltage reduces error for complex signals with large crest factors. Normally connected to VREF3 via resistor voltage divider. See Application Note section. 29 VREF3 3V Reference voltage output for use with VTGT. See Application Note section. 30 TEMP Temperature sensor output. See Application Note section. 12 - 134 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Evaluation PCB - Wideband Single-Ended 12 POWER DETECTORS - SMT 12 - 135 List of Materials for Evaluation PCB 121864 [1] Item J2, J5, J9, J11, J13, J14, J16, J18 J3, J4, J6 - J8, J10, J17, J19 - J25 C1, C2, C5, C6, C9, C28 C3, C8, C10, C29 C4, C7, C11, C26, C27, C30 R1, R3 R2 R4, R7, R15 - R18, R27, R31, R34 R10, R12, R20, R23 R24 R25 R26 Description SMA Connector DC Pin 1 nF Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 100 nF Capacitor, 0402 Pkg. 68 Ohm Resistor, 0402 Pkg. 10K Ohm Resistor, 0402 Pkg. 0 Ohm Resistor, 0402 Pkg. 3.92K Ohm Resistor, 0402 Pkg. 61.9K Ohm Resistor, 0402 Pkg. 33K Ohm Resistor, 0402 Pkg. 1K Ohm Resistor, 0402 Pkg. Item U1 PCB [2] Description HMC714LP5(E) Single-Ended Dual RMS Power Detector 121862 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Application Circuit - Wideband Single-Ended 12 POWER DETECTORS - SMT 12 - 136 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Evaluation PCB - Differential 12 POWER DETECTORS - SMT 12 - 137 List of Materials for Evaluation PCB 120339 [1] Item J2, J5, J9, J11, J13, J14, J16, J18 J3, J4, J6 - J8, J10, J17, J19 - J25 C1, C2, C5, C6, C9, C28 C3, C8, C10, C29 C4, C7, C11, C26, C27, C30 R1, R3 R2 R4, R7, R15 - R18, R27 R10, R12, R20, R23 R24 R25 R26 Description SMA Connector DC Pin PCB [2] 1 nF Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 100 nF Capacitor, 0402 Pkg. 68.1 Ohm Resistor, 0402 Pkg. 10K Ohm Resistor, 0402 Pkg. 0 Ohm Resistor, 0402 Pkg. 3.92K Ohm Resistor, 0402 Pkg. 61.9K Ohm Resistor, 0402 Pkg. 33K Ohm Resistor, 0402 Pkg. 1K Ohm Resistor, 0402 Pkg. Item T1, T2 U1 Description Transformer, E-Series RF 1:1, HMC714LP5(E) Differential Dual RMS Power Detector 120336 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Application Circuit - Differential 12 POWER DETECTORS - SMT 12 - 138 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Application Information Principle of Operation 12 POWER DETECTORS - SMT 12 - 139 VRMSOUT = 1 ln(kG2VIN2dt) k 4 VRMS vs. PIN k VIN2dt RMS OUTPUT VOLTAGE (V) ViPAR = m VIN2 -1 + iREF 3 Measured Ideal Where is op-amp gain set via resistors on the Vset pin. Pin = VRMS/[log-slope]+[log-intercept], dBm Monolithic true-RMS detectors are in-effect analog calculators, calculating the RMS value of the input signal, unlike other types of power detectors which are designed to respond to the RF signal envelope. At the core of an RMS detector is a fullwave rectifier, log/antilog circuit, and an integrator. The RMS output signal is directly proportional to the logarithm of the time-averaged VIN2. The bias block also contains temperature compensation circuits which stabilize output accuracy over the entire operating temperature range. The DC offset cancellation circuit actively cancels internal offsets so that even very small input signals can be measure accurately. The iPAR feature tracks the RF envelope and provides a signal which is directly proportional to signal power, normalized to average real power calculated by the RMS circuitry. Reading both the iPAR and RMS output voltage signals provides a very informative picture of the RF input signal: peak power, average power, peak-to-average power, and RF wave-shape. Simultaneous measurement of signal power and average power is essential for taking full advantage of a receive signal chain's available dynamic range, while avoiding saturation, or to maximize transmitter efficiency. 2 1 0 -65 -55 -45 -35 -25 -15 -5 5 15 INPUT POWER (dBm) iPAR Output & Input RF Signal Envelope vs. Time for an Input Crest Factor of 9.03 dB @ 1900 MHz [2] 2.25 IPAR Output 1.5 INPUT RF SIGNAL ENVELOPE (V) 1.75 INS [A,B] (V) 1 1.25 0.5 0.75 0 0.25 Input RF Signal Envelope -0.5 1 2 3 Time (usec) 4 5 0 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Dual RMS Detection Channels The HMC714LP5E integrates two HMC614LP4E RMS detection channels with shared bias and control circuitry. The linear-in-dB channel outputs at the RMSA and RMSB pins provide RMS detection performance in terms of dynamic range, temperature stability, and logarithmic linearity similar to Hittite's HMC614LP4E with improved frequency detection range extending up to 5.8 GHz. Proprietary design techniques enable extremely good matching between channels (within less than 0.5 dB with single-ended cnfiguration) over a wide range of input frequencies with low temperature drift. HMC714LP5E also provides "channel difference" outputs via pins OUTP and OUTN that can be either used differentially or single-ended. The VLVL input is used to set the common mode reference level for those outputs. On the Hittite evaluation board, the VLVL pin is shorted to VREF2 output to provide a nominal bias voltage of 2.5V; but any external bias voltage can be used to set VLVL. 12 POWER DETECTORS - SMT Channel Difference Outputs @ 1900 MHz, Channel A Power Swept, Channel B @ -25 dBm 4 3.5 3 OUTPUT (V) 2.5 2 1.5 1 0.5 0 -65 -55 -45 -35 -25 -15 OUTP OUTN RMSA RMSB -5 5 15 CHANNEL A INPUT POWER (dBm) A ratio of two signal powers is a simple difference in the log domain. The OUTP and OUTN outputs can provide a direct read of input signal power ratio between the signals presented to the two power detection channels. When OUTP is connected directly to FBK A OUTP = RMSA - RMSB + VLVL And when OUTN is connected directly to FBKB OUTN = RMSB - RMSA+VLVL With the channels of HMC714LP5E having very low mismatch, channel outputs RMSA and RMSB track very closely over temperature. The difference operation also allows the OUTP and OUTN to reject common-mode changes in channels A and B. HMC714LP5E also features iPAR output on each power detector. The RMSA and RMSB outputs provide a read of average input signal (i.e True RMS power). The INSA and INSB pins are iPAR outputs providing a simultaneous read of input signal Peak Power, Peak-to-Average Ratio, and RF waveshape. Refer to the section under "iPAR - Envelope Power Normalized To Average Power" for more details on iPAR measurements. 12 - 140 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Channel Matching Single channel RMS detectors exhibit part-to-part variations that tend to complicate simultaneous power readings. Simultaneous signal power measurements are particularly useful for automatic gain/level control and VSWR measurements. When separate power detectors are used, the lack of an accurate match between the power detectors will produce measurement errors. Calibration and compensation methods are required to counteract the differences between the separate power detectors. The Dual RMS detector package greatly simplifies that activity, and will reliably produce more accurate measurements. The HMC714LP5E provides industry leading channel matching performance with the use of proprietary techniques. The channel mismatch is typically less than 20 mV over the specified temperature and frequency range when the singleended input interface is used. Hittite "differential" evaluation kits use M/A Com's ETC1-1-13 balun, which are designed to work up to 3 GHz. At frequencies lower than 3 GHz, the mismatch between the two input baluns cause a larger variation between the channels when compared to the single-ended interface (typically 25 mV up to 900 MHz and 50 mV up to 2700 MHz). The input impedance mismatch presented by the balun at signal frequencies beyond 3 GHz will further increase the channel-to-channel variation. The "single-ended" input interface does not have this limitation. The "single-ended" interface can utilize the full input signal bandwidth of the power detector; however the "single-ended" input interface is tuned. The differential or balun input interface is best suited to very wideband power measurements (100 MHz to 3 GHz), whereas the single-ended input interface is best suited to signal power measurement over bandwidths up to 300 MHz (for 1 dB error tolerance) in the hole RF frequency range. Channel Matching [RMSA-RMSB] in Wideband Single Ended Confi guration 0.16 0.12 0.08 RMSA-RMSB (V) 0.04 0 0.1 GHz 0.5 Ghz 0.9 GHz 1.4 GHz 1.9 GHz -0.04 -0.08 -0.12 -40 -30 -20 -10 0 10 Using wideband single-ended input interface 12 POWER DETECTORS - SMT 12 - 141 -0.16 -50 INPUT POWER (dBm) Channel Matching [RMSA-RMSB] @ 900 MHz 0.16 0.12 0.08 RMSA-RMSB (V) 0.04 0 -0.04 -0.08 -0.12 -0.16 -50 -40 -30 -20 -10 0 10 Using balun input interface INPUT POWER (dBm) Channel Matching [RMSA-RMSB] @ 3.5 GHz 0.16 0.12 0.08 RMSA-RMSB (V) 0.04 0 RMSA-RMSB (V) Channel Matching [RMSA-RMSB] in Single Ended Confi guration tuned @ 3.6 GHz 0.16 0.12 0.08 0.04 0 3.3 GHz 3.4 GHz 3.5 GHz 3.6 GHz 3.7 GHz 3.8 GHz 3.9 GHz -0.04 -0.08 -0.12 -0.16 -50 -40 Using balun input interface -0.04 -0.08 -0.12 Using single-ended interface tuned for 3.6 GHz -30 -20 -10 0 10 -0.16 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Input to Input Isolations with ETC1-1-13 Baluns 0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 -90 -100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 Input A->Input B Input B->Input A Channel Isolation/Interface Channel isolation/interference is grouped into two categories: On-chip inter-channel interference, and Off-chip inter-channel interference. Off-chip interference between channels should be considered, especially at small signal levels, since HMC714LP5E is capable of detecting a signal over a very wide dynamic range (70 dB+). There are two main mechanisms through which the interference between the channels may affect measurement accuracy. The first one is the direct coupling of the RF signal from one RF channel input to the other RF channel input. Baluns on the detector inputs usually contribute to inter-channel coupling, as does PC board design and the quality of the soldered connections. On-chip inter-channel interference, herein referred to as "input-output channel isolation", usually manifests itself as drift on one detector output due to a relatively strong signal present at the other detector input. Quantitatively, the inputoutput channel isolation is defined as the difference between the input power levels at both channels when the interfering (higher power level) channel causes a 1 dB measurement drift in the interfered (lower power level) channel. Worst case channel interference occurs when one channel has an input signal level just over its detection threshold. Input-Output Channel isolation for HMC714LP5E is: 55+ dB input-output isolation at 900 MHz 45 dB input-output isolation up to 2.7 GHz 35 dB input-output isolation up to 5.8 GHz. If the same signal frequency is injected into both channels for this Input-Output Channel Isolation measurement, the interference will manifest as a phase delay. A slight offset in signal frequency between the two channels can be seen as a ripple at the output of the channel with the lower power level applied at its input. Peaks in the output ripple correspond to the worst-case phase shift for input-output interference. The frequency of the output ripple will be equal to the "beat" frequency between the two channels. The magnitude of the output ripple will depend on the integration and offset capacitors connected to CINT and COFS pins, respectively. The output ripple is reduced by increasing the value of the integration capacitance (CINT), thereby decreasing the integrator bandwidth. The data was collected using a 100kHz offset between the channels. 12 POWER DETECTORS - SMT FREQUENCY (GHz) Interference to an Input Signal (INB Power Fixed) with Interfering Signal on the other Channel (INA Power Swept) [1] 3 ERROR IN CHANNEL B (dB) 2.5 2 1.5 1 0.5 0 -30 0.5 GHz 0.9 GHz 1.9 GHz 2.7 GHz 3.9 GHz 5.8 GHz -25 -20 -15 -10 -5 0 5 10 15 CHANNEL A INPUT POWER (dBm) Interference to an Input Signal (INA Power Fixed) with Interfering Signal on the other Channel (INB Power Swept) [1] 3 ERROR IN CHANNEL A (dB) 2.5 2 1.5 1 0.5 0 -30 0.5 GHz 0.9 GHz 1.9 GHz 2.7 GHz 3.9 GHz 5.8 GHz -25 -20 -15 -10 -5 0 5 10 15 CHANNEL B INPUT POWER (dBm) 12 - 142 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Confi guration for the Typical Application The RF inputs can be connected in either a differential or single-ended configuration: see "RF Input Interface" section for details on each input configuration. With the appropriate input tuning components, the part can provide the full performance with a single-ended input. The RMSA & RMSB output signals are typically connected directly to VSETA & VSETB inputs, providing a Pin->VRMS transfer characteristic slope of 36.5 mV/dBm at both channels; however the RMS output can be re-scaled to "magnify" a specific portion of the input sensing range, and to fully utilize the dynamic range of the RMS output. Refer to the section under the "log-slope and intercept" for details. The INSA & INSB pins are the instantaneous peak-to-average ratio (iPAR) outputs; on each detector. This iPAR measurement pulls it's signal from the internals of the RMS detector, just before the RMS calculation is processed. Each iPAR output (INSA & INSB) produces a voltage signal which provides a direct read of the RF signal AM envelope. So between the simultaneous measurement of RMS power and iPAR on each power detector, a system can monitor average power, peak power, peak-to-average power, and the RF waveshape. See the section under "iPAR Envelope Power Normalized to Average Power" for application details. VTGT with a nominal value of 2V is typically generated from the VREF reference output of 3V; however the VTGT voltage can be adjusted to optimize measurement accuracy, especially when measurement at higher crest factors is important: see "Adjusting VTGT for greater precision" section for technical details. Due to part-to-part variations in log-slope and log-intercept, a system-level calibration is recommended to satisfy absolute accuracy requirements: refer to the "System Calibration" section for more details. The HMC714LP5E requires a single 5V supply connected to three pins: VCCA , VCCB, and VCCBIAS. Adequate power supply decoupling is required on these pins. The supply pins should be decoupled to ground using two parallel capacitors with the values shown in the application schematic. The capacitors should be placed close to the part (with the smaller value as close as possible to the supply pin) and must provide a low impedance path to RF GND over the entire input frequency range. 12 POWER DETECTORS - SMT 12 - 143 Temperature Sensor Interface The HMC714LP5E provides a buffered PTAT temperature sensor output that provides a temperature scaling factor of 2.2 mV/C with a typical output voltage of 600 mV at 0C. The output is capable of sourcing 1.5 mA. TEMP Output 0.85 0.8 0.75 TEMP (V) 0.7 0.65 0.6 0.55 0.5 -40 -30 -20 -10 TEMP Ideal 0 10 20 30 40 50 60 70 80 90 TEMPERATURE (Celcius) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz RF Input Interface The INPA and INNA pins are differential inputs on one of two power detectors, which we will refer to as channel A. INPB and INNB pins are differential inputs on the other power detector, channel B. The inputs for both channels can be externally configured with differential or single-ended input. Power match components are placed on these input terminals, along with DC blocking capacitors. The coupling capacitor values also set the lower spectral boundary of the input signal bandwidth. The inputs can be reactively matched (refer to input return loss graphs), but a resistor network should be sufficient for good wideband performance. Differential Input Interface: 12 POWER DETECTORS - SMT The value of RD (=RDA=RDB) depends on the balun used; if the balun is 50 on both sides of the SE-Diff conversion, then RD where RM = the desired power match impedance in ohms. For RM = 50, RD = 67 68 Single-Ended Input Interface: Tuned SE-interface: for signal frequencies > 900MHz Choose L and C elements from the following graph for narrowband tuning of the SE-interface: R31/34 = 30, R32/35 = 50, C1/6 =1 nF R30/33 = 270, Wideband SE-interface: for signal frequencies < 900 MHz R31/34 = 0, R32/35 = OPEN, R1/R3 = 68, R30/33 = Open C2, C5 is 1 nF decoupling caps. For wideband (un-tuned) input interfaces, choose the input decoupling capacitor values by first determining the lowest spectral component the power detector is required to sense, L. Input decoupling capacitor value 1 p x f L x 3.2 farads, where L is in Hertz. Ex. If the power detector needs to sense down to 10 MHz, the decoupling capacitor value should be 1/(*10E6*3.2) = 10 nF A DC bias (Vcc-1.5V) is present on the INP[A,B] and IN[A,B] pins, and should not be overridden. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 12 - 144 HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz RF Input Interface (Continued) Tuning, Single Ended Interface: fc 300 MHz 10 9 TUNING CAPACITANCE (pF) 8 7 6 5 4 3 2 1 0 900 1400 1900 2400 2900 3400 FREQUENCY (MHz) 10 9 8 7 6 5 4 3 2 1 0 3900 TUNING INDUCTANCE (nH) 12 POWER DETECTORS - SMT 12 - 145 RMS Output Interface and Transient Response Output transient response is determined by the integration capacitances CINTA & CINTB and output load conditions. Using larger values of CINT will narrow the operating bandwidth of the integrator, resulting in a longer averaging time-interval and a more filtered output signal; however it will also slow the power detector's transient response. A larger CINT value favors output accuracy over speed. For the fastest possible transient settling times, leave the CINT pins free of any external capacitance. This configuration will operate the integrator at its widest possible bandwidth, resulting in short averaging time-interval and an output signal with little filtering. Most applications will choose to have some external integration capacitance, maintaining a balance between speed and accuracy. Furthermore, error performance over crest factor is degraded when CINT is very small (for CINT < 100 pF). Modulation and deviation results in Electrical Specification Table 2 are provided with CINT = 0.1 uF. Start by selecting CINT using the following expression, and then adjust the value as needed, based on the application's preference for faster transient settling or output accuracy. CINT = 1500 uF/(2* *lam), in Farads, where lam = lowest amplitude-modulation component frequency in Hertz Example: when lam = 10 kHz, CINT = 1500 F/(2**1000) = 24E-9 Farads ~ 22 nF Table: Transient response vs. CINT capacitance: with COFS = 0 CINT 0 100 pF 1 nF 10 nF RMS Rise - Time over Dynamic Range Pin = 0 dBm 35 nsec 80 nsec 780 nsec 7.8 usec RMS Fall - Time Pin = -30 dBm 120 nsec 410 nsec 3.3 usec 32.4 usec Pin = -10 dBm 200 nsec 720 nsec 5.6 usec 54 usec Pin = 0 dBm 1.18 usec 1.26 usec 7 usec 66.4 usec Input signal is 1900 MHz CW-tone switched on and off RMS is loaded with 1k, 4 pF, and VTGT = 2V, For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz RMS Output Interface and Transient Response (Continued) Transient response can also be slewed by the RMS output if it is excessively loaded: keep load resistance above 375. An optimal load resistance of approximately 500 to 1k will allow the output to move as quickly as it is able. For increased load drive capability, consider a buffer amplifier on the RMS output. Using an integrating amplifier on the RMS output allows for an alternative treatment for faster settling times. An external amplifier optimized for transient settling can also provide additional RMS filtering, when operating HMC714LP5E with a lower CINT capacitance value. Rise/Fall Characteristics, CINT = 0 pF Rise/Fall Characteristics, CINT = 10 nF 4 3.5 3 RMSOUT (V) 2.5 2 1.5 1 0.5 10 dBm 0 dBm -10 dBm -20 dBm -30 dBm 12 RMSOUT (V) 4 3.5 3 10 dBm 0 dBm -10 dBm -20 dBm -30 dBm POWER DETECTORS - SMT 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 TIME (usec) 2 2.5 3 0 0 50 100 150 200 250 TIME (usec) LOG-Slope and Intercept The HMC714LP5E provides for an adjustment of output scale by controlling the fraction of RMSA /RMSB that is fed-back to the setpoint interface at the VSETA /VSETB pins. Log-slope and intercept can be adjusted to "magnify" a specific portion of the input sensing range, and to fully utilize the dynamic range of the RMS output. A log-slope of 36.5 mV/dBm is set by connecting the RMSA /RMSB outputs directly to VSETA /VSETB pins using 0 resistors RFBK A and RFBKB. The log-slope is adjusted by using the appropriate resistors RFBK A , RFBKB, RSHUNTA , RSHUNTB on the RMSA /RMSB and VSETA /VSETB pins. Log-intercept is adjusted by applying a DC voltage to the VSETA /VSETB pins through resistors RSETA and RSETB . Due to the 15 k input resistance at the VSETA /VSETB pins, moderately low resistance values should be used to minimize the scaling errors. Very low resistor values will reduce the load driving capabilities of RMSA /RMSB outputs while larger values will result in scaling errors and increase of the temperature errors because of the mismatch of the on-chip and external resistor temperature coefficients. Optimized slope = * log slope Optimized intercept = log intercept - (RFBK / RSET) * Vzc RFBK = RFBK // RSHUNT // RSET When RFBK = 0 Ohm to set RMS = VSET, then = 1 Note: Avoid excessive loading of the RMS output; keep CLOAD < 35 pF, and RLOAD > 375 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 12 - 146 HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz LOG-Slope and Intercept (Continued) Example: The logarithmic slope can be simply increased by choosing appropriate RFBK and RSHUNT values while not populating the RSET resistor on the evaluation board to keep the intercept at nominal value. Setting RFBK = 820 and RSHUNT = 2200 results in an optimized slope of: Optimized Slope = * log_slope = 1.42 * 36.5 mV / dB Optimized Slope = 52 mV / dB Slope Adjustment 4.5 4 3.5 RMSOUT (V) 3 2.5 2 1.5 1 0.5 0 -70 -60 -50 -40 Slope=36.2mV/dB Rset=open Rfbk=0ohm Rshunt=open Slope=51mV/dB Rset=open Rfbk=820ohm Rshunt=2200ohm High Slope Nominal 12 POWER DETECTORS - SMT 12 - 147 -30 -20 -10 0 10 INPUT POWER (dBm) Example: The logarithmic intercept can also be adjusted by choosing appropriate RFBK, RSHUNT, and RSET values while keeping the logarithmic slope at about 50mV/dB. Setting RFBK = 820 Ohm and RSHUNT = RSET = 4700 results in an optimized slope of: Optimized Slope = * log_slope = 1.4 * 36.5 mV / dB Optimized Intercept = log_intercept - RFBK * VZC RSET Optimized Intercept = log_intercept - 0.174 * VZC Optimized Slope = 51 mV / dB Intercept Adjustment 4.5 4 3.5 3 VOUT (V) RMS (V) 2.5 2 1.5 1 0.5 0 -60 -50 -40 -30 -20 -10 Vzc=0 Vzc=0.8 Vzc=1.6 Vzc=3.2 Vzc=-0.8 Vzc=-1.6 Vzc=-3.2 Rset=4700ohm Rfbk=820ohm Rshunt=4700ohm Intercept Adjustment (with Temp) 4.5 4 3.5 3 VSET=0V VSET=-1.6V +25C +85C -40C 2.5 2 1.5 1 0.5 VSET=1.6V 0 10 0 -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz iPAR - Envelope Power Normalized To Average Power The INSA and INSB are envelope detector outputs for A & B channels that provide a measurement of instantaneous signal power normalized average power. This feature is called Instantaneous Peak to Average Ratio (iPAR). The iPAR makes peak-to-average power comparisons immediately obvious. This simultaneous measurement of envelope power and average power in HMC714LP5E has two fundamental advantages over traditional methods of which employ two different power detectors working in parallel. * Both the iPAR and RMS detectors share the same measurement structures, and * Both the iPAR and RMS detectors share the same temperature compensation mechanisms. With traditional implementation of peak-to-average power detection, the dominant source of errors is due to the uncorrelated measurement deviations between the two separate detectors. Both detectors in the HMC714LP5E share the same circuits (INSA-RMSA pair and INSB -RMSB pair), so any deviations, however small, are fully correlated. The iPAR feature can be configured to provide two major functions: 12 POWER DETECTORS - SMT 1. A measurement of instantaneous signal power normalized to average power In this most basic measurement mode, INSA (INSB) output is terminated to ground using an external resistor which forms an output buffer with the internal transistor Q1 connected in emitter-follower configuration. With Rext = 3.9 kOhm (R20 and R12 on the evaluation board for A & B channels), INSA (INSB) output can track the input envelope up to a modulation bandwidth of 35 MHz at which point the output swing drops by 50%. For an unmodulated input signal with f>>35 MHz, the INSA (INSB) output will provide a constant value of approximately 1.6V indicating that the instantaneous power is equal to the average power. The INSA (INSB) output voltages linearly follow the instantaneous power levels at the detector input with the transfer gain scaled by an external voltage applied to VTGT (pin 28). For a nominal voltage of 2V on VTGT the scaling factor of the INSA (INSB) output is 200 mV. INS[A ,B] = IREF[A ,B] + SF*(EAR[A ,B] - 1) where IREF[A ,B] = (VCC[A ,B]*REXT) /( 3*(REXT+65 Ohm)) 1.6 V (for VCC = 5V, REXT = 2 k) where EAR[A ,B] = input signal RF AM envelope-to-average power ratio on channel [A,B] and SF = the scaling factor set by an external voltage applied to VTGT (200 mV when VTGT = 2.0V) For example, the INSA (INSB) voltage will drop to 1.4 V (1.6-0.2V) when the input power instantaneously drops to zero, and will increase to 2.2V (1.6+0.2*3) when the input power instantaneously increases to 4 times the average power. With lower VTGT values the scaling factor also decreases, allowing INSA (INSB) to linearly track larger swings of input power. iPAR Output & Input RF Signal Envelope vs. Time for an Input Crest Factor of 9.03 dB @ 1900 MHz [2] 2.25 IPAR Output INS [A,B] Output vs. Instantaneous Input Power (Normalized to Average Power) 3 2.8 IPWR OUTPUT (V) 2.6 2.4 2.2 2 1.8 1.6 1.4 0 2 =Pin/Pav*0.2+(1.6-0.2) IPWR Output VTGT = 2V =Pin/Pav*0.1+(1.6-0.1) IPWR Output VTGT = 1V 1.5 INPUT RF SIGNAL ENVELOPE (V) IPWR(t) = (VTGT/10)x(Pin(t)/Pavg)+(1.6-(Vtgt/10)) 1.75 INS [A,B] (V) 1 1.25 0.5 0.75 0 0.25 Input RF Signal Envelope -0.5 1 2 3 Time (usec) 4 5 0 4 6 8 10 INSTANTANEOUS INPUT POWER (NORMALIZED TO AVERAGE POWER) 12 12 - 148 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz PAR - Envelope Power Normalized To Average Power (Continued) The INSA (INSB) output is highly independent from input signal frequency, input average power, and temperature. Proprietary design techniques assure very little part-to-part variation and maintain a very high degree of match between channels. 2. A measurement of peak-power normalized to average power To measure peak power, a peak-hold mechanism is required at the INSA (INSB) output. The peak-hold circuit can be as simple as an RC combination on the INSA (INSB) pin. In this configuration, peak excursions of the input signal is stored as a peak voltage on the external Cext capacitor. Rext is used to set the quiescent bias point of Q1, and together with Cext will for a time-constant for the peak-hold function. The larger Cext is the longer the peakdetector will "remember" the largest signal excursion; conversely a smaller value of Cext will result in a shorter memory, and less filtering. The value of Rext for this "peak-power" mode of the iPAR function should be much larger than the value used for the iPAR mode described previously (instantaneous power tracking mode) to extend the RextCext time-constant. INS[A ,B] = IREF[A ,B] + SF*(PAR[A ,B] - 1) where IREF[A ,B] = VCC[A ,B] / 3 + 0.15V 1.82V (for VCC = 5V, REXT = 500 k) where PAR[A ,B] = input signal peak-to-average ratio on channel [A,B] and SF = the scaling factor set by an external voltage applied to VTGT (150 mV when VTGT = 2.0V) The graphs below describes the INSA (INSB) peak-hold levels as a function of input peak-to-average ratio (PAR) and also crest factor. Note how the voltage applied at VTGT affects the INSA (INSB) reading. The voltage applied to the VTGT pin also has a secondary effect on crest-factor performance. The VTGT signal optimizes internal bias points for measurement accuracy at higher crest factors: refer to the section under "Adjusting VTGT for greater precision" for a 12 POWER DETECTORS - SMT 12 - 149 iPAR Feature Peak-to-Average Power Detection Confi guration (REXT = 500, CEXT = 100 nF) 3.4 3.2 3 2.8 INSA (V) INSA Linear Fit iPAR Feature Peak-to-Average Power Detection Confi guration vc Crest Factor (CEXT = 100 nF) 3.4 3.2 3 2.8 INSA (V) 2.6 2.4 2.2 Single Tone (CW) Inputs VTGT=2V Rext=100kohm VTGT=2V Rext=500kohm VTGT=1V Rext=500kohm 2.6 VTGT=2V 256QAM (1Mbps) Crest Factor~7.8dB 2.4 2.2 2 1.8 Single Tone (CW) Inputs VTGT=1V 2 1.8 1.6 1 2 3 4 5 6 7 8 9 10 11 12 1.6 2 3 4 5 6 7 8 9 10 11 INPUT CREST FACTOR (dB) 12 13 14 PEAK TO AVERAGE POWER RATIO (PAR) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz PAR - Envelope Power Normalized To Average Power (Continued) full description on crest factor optimization. iPAR Reference Outputs: IREFA & IREFB HMC714LP5E also provides two reference voltage outputs, IREFA (pin 26) and IREFB (pin 15) for A & B channels, which when used with the INSA /INSB outputs allows cancellation of temperature and supply related variations of the INSA /INSB DC offsets. INSA /INSB DC offsets are equal to the IREFA /IREFB reference voltages, and these levels corresponds to the envelope-to-average ratio (EAR) or peak-to-average ratio (PAR) of an unmodulated carrier (CWtone crest factor = 3 dB). For the best cancellation of the effects of temperature and supply voltage on INSA /INSB DC offsets, load both the INSA /INSB and IREFA /IREFB outputs with an equivalent RC network. 12 POWER DETECTORS - SMT Propagation Delay of INSA & INSB The proper operation of the iPAR feature depends on the proper settling of the RMS outputs because both the iPAR feature and the RMS detection feature share the same internal structures. After internal mechanisms of the detector have settled, the RMS outputs (RMSA & RMSB) provide a reading of input average power while iPAR outputs (INSA & INSB) provides the instantaneous (or peak) power value of the input signal. There is of course some finite propagation delay from the instant of input power change to the change of INSA (INSB). That propagation delay is defined by the external capacitor, Cext. The figure illustrates the propagation delay from a 900 MHz, 6-tone (multi-carrier) input signal at -10 dBm average power to the INSA output of HMC714LP5E. As illustrated, the propagation delay is 26 nsec with the detector configured with the wideband, single-ended input interface. The use of the differential input interface with the balun increases the propagation delay to 37 nsec under similar test conditions. Propagation Delay with Wideband Single Ended Input Itnerface 0.2 0.15 Input Signal Envelope (V) 0.1 0.05 0 -0.05 -0.1 -0.15 -0.2 -150 -100 -50 0 50 100 150 200 26nS 2.85 2.49 2.14 1.78 INSA (V) 1.42 1.07 0.71 0.36 0 250 Vpd (Vdc) Standby Mode The ENX can be used to force the power detector into a low-power standby mode. In this mode, the entire power detector is powered-down. As ENX is deactivated, power is restored to all of the circuits. There is no memory of previous conditions. Coming-out of stand-by, CINT and COFS capacitors will require recharging, so if large capacitor values have been chosen, the wake-up time will be lengthened. DC Offset Compensation Loop Internal DC offsets, which are input signal dependant, require continuous cancellation. Offset cancellation is a critical function needed for maintenance of measurement accuracy and sensitivity. The DC offset cancellation loop performs this function, and its response is largely defined by the capacitance off. Setting DC offset cancellation, loop bandwidth strives to strike a balance between offset cancellation accuracy, and loop response time. A larger value of COFS results in a more precise offset cancellation, but at the expense of a slower offset cancellation response. A smaller value of COFS tilts the performance trade-off towards a faster offset cancellation response. The optimal loop bandwidth setting will allow internal offsets to be cancelled at a minimally acceptable speed. 12 - 150 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz DC Offset Compensation Loop (Continued) DC Offset Cancellation Loop Bandwith 1 (500)(COFS + 20 x 1012) Hz For example: loop bandwidth for DC cancellation with COFS = 1nF, bandwidth is ~62 kHz Note: The measurement error produced by internal DC offsets cannot be measured repeatably at any single operating point, in terms of input signal frequency and level. Measurement error must be calculated to a best fit line, over the entire range of input signal (again, in terms of signal level and frequency). Adjusting VTGT for Greater Precision There are two competing aspects of performance, for which VTGT can be used to set a preference. Depending on which aspect of precision is more important to the application, the VTGT pin can be used to find a compromise between two sources of RMS output error: internal DC offset cancellation error and deviation at high crest factors (>12dB). * Increasing VTGT input voltage will reduce the effect of internal DC offsets, but deviation at high crest factors will increase slightly. A 50% increase in VTGT should produce an 18% improvement in RMS precision due to a reduction in internal DC offsets effects. * Decreasing VTGT input voltage will reduce errors at high crest factors, but internal DC offsets will have more of an effect on measurement accuracy. If input signal crest factor is not expected to exceed 10dB, you can improve RMS precision by increasing VTGT voltage. Keep in mind that changing VTGT also adjusts the log-intercept point, which shifts the "input dynamic range". The best set-point for VTGT will be the lowest voltage that still maintains the "input dynamic range" over the required range of input power. This new VTGT set-point should optimize the amount of DC offset related errors. If error performance at high crest factors requires optimization, set VTGT for the maximum tolerable error at the highest expected crest factor. Increasing VTGT beyond that point will unnecessarily compromise internal DC offset cancellation performance. After changing VTGT, re-verify that the "input dynamic range" still covers the required range of input power. VTGT should be referenced to VREF for best performance. It is recommended to use a temperature stable DC amplifier between VTGT and VREF to create VTGT > VREF. The VREF pin is a temperature compensated voltage reference output, only intended for use with VTGT. 12 POWER DETECTORS - SMT 12 - 151 RMS Output Error vs. Crest Factor 0 RMSA/RMSB ERROR (dB) -0.5 -1 -1.5 VTGT infl uence on DC offset compensation VGTG 1.0 V 1.5 V 2.0 V 3.0 V Error due to internal DC offsets nominal + 0.2 dB nominal + 0.1 dB nominal 7.nominal + 0.06 dB nominal + 0.1 dB -2 -2.5 -3 VTGT=0.5V VTGT=1V VTGT=2V VTGT=3V 3.5 V 0 2 4 6 8 10 12 14 CREST FACTOR (dB) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz System Calibration Due to part-to-part variations in log-slope and log-intercept, a system-level calibration is recommended to satisfy absolute accuracy requirements. When performing this calibration, choose at least two test points: near the top-end and bottom-end of the measurement range. It is best to measure the calibration points in the regions (of frequency and amplitude) where accuracy is most important. Derive the log-slope and log-intercept, and store them in non-volatile memory. Calibrate iPAR scaling by measuring the peak-to-average ratio of a known signal. For example if the following two calibration points were measured at 2.35 GHz: With Vrms = 2.34V at Pin= -7dBm, and Vrms=1.84V at Pin= -16dBm Now performing a power measurement: Vrms measures 2.13V [Measured Pin] = [Measured Vrms]*SCC + ICC [Measured Pin] = 2.13*18.0 - 49.12 = -10.78dBm An error of only 0.22dB 12 POWER DETECTORS - SMT Slope Calibration Constant = SCC SCC = (-16+7)/(1.84-2.34) = 18 dB/V Intercept Calibration Constant = ICC ICC = Pin - SCC*Vrms = -7 - 18.0 * 2.34 = -49.12dBm Factory system calibration measurements should be made using an input signal representative of the application. If the power detector will operate over a wide range of frequencies, choose a central frequency for calibration. Layout Considerations * Mount RF input coupling capacitors close to the IN+ and IN- pins. * Solder the heat slug on the package underside to a grounded island which can draw heat away from the die with low thermal impedance. The grounded island should be at RF ground potential. * Connect power detector ground to the RF ground plane, and mount the supply decoupling capacitors close to the supply pins. Defi nitions: * Log-slope: slope of PIN -> VRMS transfer characteristic. In units of mV/dB * Log-intercept: x-axis intercept of PIN -> VRMS transfer characteristic. In units of dBm. * RMS Output Error: The difference between the measured PIN and actual PIN using a line of best fit. [measured_PIN] = [measured_VRMS] / [best-fit-slope] + [best-fit-intercept], dBm * Input Dynamic Range: the range of average input power for which there is a corresponding RMS output voltage with "RMS Output Error" falling within a specific error tolerance. * Crest Factor: Peak power to average power ratio for time-varying signals. 12 - 152 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 / 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Notes: 12 POWER DETECTORS - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 12 - 153 |
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