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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C725FP Issued Date : 2009.06.15 Revised Date : Page No. : 1/9
MTN10N65FP
Description
BVDSS : 700V @Tj=150 RDS(ON) : 0.75 ID : 10A
The MTN10N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications
Features
* BVDSS=700V typically @ Tj=150 * Low On Resistance * Simple Drive Requirement * Low Gate Charge * Fast Switching Characteristic * RoHS compliant package
Applications
* Power Factor Correction * LCD TV Power * Full and Half Bridge Power
Symbol
MTN10N65FP
Outline
TO-220FP
GGate DDrain SSource
GDS
MTN10N65FP
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25C)
Parameter Symbol
Spec. No. : C725FP Issued Date : 2009.06.15 Revised Date : Page No. : 2/9
Limits
Unit
Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100C Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy @ L=4.3mH, ID=10 Amps, VDD=50V Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation (TC=25) Linear Derating Factor Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature Note : 1. TJ=+25 to +150. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. ISD10A, dI/dt100A/s, VDDBVDSS, TJ=+150.
VDS VGS ID ID IDM EAS EAR dv/dt TL TPKG Pd Tj, Tstg
650 30 10* 6 40* 237 5 3.0 300 260 50 0.4 -55~+150
V V A A A mJ V/ns C C W W/C C
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 2.5 100 Unit C/W C/W
MTN10N65FP
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Tj=25C, unless otherwise specified)
Symbol Min. Typ. 700 0.631 700 6.8 0.65 39 9.5 17.6 19 16 49 16 1882 170 20 352 2.9 Max. 4.0 100 25 250 0.75 1.5 10 40 528 4.35 Unit V V V/C V V S nA A A Test Conditions Static BVDSS 650 BVDSS BVDSS/Tj BVDS VGS(th) 2.0 *GFS IGSS IDSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS *ISM *trr *Qrr -
Spec. No. : C725FP Issued Date : 2009.06.15 Revised Date : Page No. : 3/9
VGS=0, ID=250A VGS=0, ID=250A, Tj=150 Reference to 25C, ID=250A VGS=0, ID=10A VDS = VGS, ID=250A VDS =15V, ID=5A VGS=30 VDS =650V, VGS =0 VDS =520V, VGS =0, Tj=125C VGS =10V, ID=6A
nC
ID=10A, VDD=300V, VGS=10V VDD=300V, ID=10A, VGS=10V, RG=9.1
ns
pF
VGS=0V, VDS=25V, f=1MHz
V A ns C
IS=10A, VGS=0V VD=VG=0, VS=1.3V VGS=0, IF=10A, dI/dt=100A/s
*Pulse Test : Pulse Width 300s, Duty Cycle2%
Ordering Information
Device MTN10N65FP Package TO-220FP (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Marking 10N65
MTN10N65FP
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C725FP Issued Date : 2009.06.15 Revised Date : Page No. : 4/9
MTN10N65FP
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C725FP Issued Date : 2009.06.15 Revised Date : Page No. : 5/9
MTN10N65FP
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C725FP Issued Date : 2009.06.15 Revised Date : Page No. : 6/9
MTN10N65FP
CYStek Product Specification
CYStech Electronics Corp.
Test Circuit and Waveforms
Spec. No. : C725FP Issued Date : 2009.06.15 Revised Date : Page No. : 7/9
MTN10N65FP
CYStek Product Specification
CYStech Electronics Corp.
Test Circuit and Waveforms(Cont.)
Spec. No. : C725FP Issued Date : 2009.06.15 Revised Date : Page No. : 8/9
MTN10N65FP
CYStek Product Specification
CYStech Electronics Corp.
TO-220FP Dimension
Marking:
Spec. No. : C725FP Issued Date : 2009.06.15 Revised Date : Page No. : 9/9
Device Name
10N65
Date Code
Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-220FP Plastic Package CYStek Package Code: FP
DIM A A1 A2 A3 b b1 b2 c
Inches Min. Max. 0.169 0.185 0.051 REF 0.110 0.126 0.098 0.114 0.020 0.030 0.043 0.053 0.069 0.059 0.020 0.030
Millimeters Min. Max. 4.300 4.700 1.300 REF 2.800 3.200 2.500 2.900 0.500 0.750 1.100 1.350 1.750 1.500 0.500 0.750
DIM D E e F L L1 L2
Inches Min. Max. 0.408 0.392 0.583 0.598 0.100 TYP 0.106 REF 0.138 REF 1.102 1.118 0.067 0.075 0.075 0.083
Millimeters Min. Max. 10.360 9.960 14.800 15.200 2.540 TYP 2.700 REF 3.500 REF 28.000 28.400 1.700 1.900 1.900 2.100
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: KFC ; pure tin plated * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN10N65FP
CYStek Product Specification

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