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Transistor For High Frequency Amplify Application Silicon NPN Epitaxial Type (Super Mini type) 2SC5626 DESCURIPTION Mitsubishi 2SC5626 is a super mini packege resin sealed silicon NPN epitaxial ty pe transistor. It is designed f or high f requency amplif y application. OUTLINE DRAWING 2.1 0.425 1.25 0.425 Unit:mm FEATURE Super mini package f or easy mounting High gain band width product 2.0 1.30 0.65 0.65 1 0.3 2 3 APPLICATION Small ty pe machine high f requency amplif y application 0.9 0.7 00.1 TERMINAL CONNECTOR 1 : BASE 2 : EMITTER 3 : COLLECTOR JEITA : SC-70 JEDEC : 0.15 MAXIMUM RATINGS (Ta=25) SY MBOL VCBO VEBO VCEO I C PARAMETER Collector to Base v oltage Emitter to Base v oltage Collector to Emitter voltage RATINGS 30 4 20 50 150 +150 -55to+150 UNIT V V V mA mW MARKING Collector current Collector dissipation(Ta=25) S TYPE NAME W PC Tj Tstg Junction temperature Storage temprature ELECTRICAL CHARACTERISTICS (Ta=25) SY MBOL PARAMETER I I I C=50 A, TEST CONDITIONS I E=0mA LIMITS MIN 30 20 4 0.5 0.5 50 600 148 0.1 1100 1.2 1.5 0.3 V MHz pF TY P MAX UNIT V V V A A V(BR)CBO C to B break down v oltage V(BR)CEO C to E break down v oltage V(BR)EBO E to B break down v oltage I CBO I EBO C=100 A, C=50 A, RBE= I C=0mA E=0 Collector cut cf f current Emitter cut of f current DC f orward current gain C to E Saturation v oltage Gain band width product Collector output capacitance VCB=20V, I VEB=3V, I I C=10mA, C=0 C=5mA hFE VCE(sat) fT Cob VCE=10V, I I VCE=5V, I VCB=6V, I B=1mA E=-10mA E=0, f =1MHz ISAHAYA ELECTRONICSCORPORATION Transistor For High Frequency Amplify Application Silicon NPN Epitaxial Type (SuperMini type) C o m m o t p u t n emitter ou 20 2SC5626 Common emitter transfer 180 A 18 160 A 140 A 120 A 100 A 80 A 60 A Ta=25 100 VCE=6V Ta=25 16 14 10 12 10 8 1 6 4 2 40 A 20 A 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V base to collector voltage VBE(V) BE(V) 0 0 2 4 6 8 10 12 14 16 IB=0 A 18 20 VCE(V collector to emitter voltage ) VCE(V) DC forward current gain t VS. collector curren 10000 Ta=25 VCE=10V 1000 1 10 collector to emitter voltage V S . c o lr r e n t lector cu Ta=25 IC/IB=10/1 100 0.1 10 1 0.1 110 100 1000 0.01 0.11 10 100 collector current I IC(mA) C(mA) collector I IC(mA) current C(mA) collector output/input capacitance V S . C o l t a g e lector to Base Vol 100.0 Gain band width product VS. Emitter current 10000 V CE=5V Ta=25 f=1MHz IE=0A IC=0A Ta=25 10.0 1000 Cob 100 1.0 Cib 10 0.1 1 10100 0.1 0.11.010.0 100.0 V CB(V) collector to base voltage VCB(V) V emitter to base voltage VEB(V) EB(V) emitter IE(mA) current I E (mA) ISAHAYA ELECTRONICSCORPORATION Transistor For High Frequency Amplify Application Silicon NPN Epitaxial Type (SuperMini type) 2SC5626 C o l l e c t o t i m e c o n s t a n t r to base VS. Emitter current 100 VCB=5V f=31.8MHz Ta=25 10 1 0.1 1.0 10.0 emitter I IE(mA) current E(mA) ISAHAYA ELECTRONICSCORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! *ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials *These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer's application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. *ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. *All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. *ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. *The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. *If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. *Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Jan.2003 |
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