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Transistor
For High Frequency Amplify Application Silicon NPN Epitaxial Type (Super Mini type)
2SC5626
DESCURIPTION
Mitsubishi 2SC5626 is a super mini packege resin sealed silicon NPN epitaxial ty pe transistor. It is designed f or high f requency amplif y application. OUTLINE DRAWING 2.1 0.425 1.25 0.425 Unit:mm
FEATURE
Super mini package f or easy mounting High gain band width product 2.0
1.30 0.65 0.65
1
0.3
2
3
APPLICATION
Small ty pe machine high f requency amplif y application 0.9 0.7 00.1 TERMINAL CONNECTOR 1 : BASE 2 : EMITTER 3 : COLLECTOR JEITA : SC-70 JEDEC : 0.15
MAXIMUM RATINGS (Ta=25) SY MBOL VCBO VEBO VCEO I
C
PARAMETER Collector to Base v oltage Emitter to Base v oltage
Collector to Emitter voltage
RATINGS 30 4 20 50 150 +150 -55to+150
UNIT V V V mA mW
MARKING
Collector current
Collector dissipation(Ta=25)
S
TYPE NAME
W
PC Tj Tstg
Junction temperature Storage temprature
ELECTRICAL CHARACTERISTICS (Ta=25) SY MBOL PARAMETER I I I
C=50 A,
TEST CONDITIONS I
E=0mA
LIMITS MIN 30 20 4 0.5 0.5 50 600 148 0.1 1100 1.2 1.5 0.3 V MHz pF TY P MAX UNIT V V V A A
V(BR)CBO C to B break down v oltage V(BR)CEO C to E break down v oltage V(BR)EBO E to B break down v oltage I CBO I
EBO
C=100 A, C=50 A,
RBE=
I C=0mA
E=0
Collector cut cf f current Emitter cut of f current DC f orward current gain C to E Saturation v oltage Gain band width product
Collector output capacitance
VCB=20V, I VEB=3V, I I
C=10mA,
C=0 C=5mA
hFE VCE(sat) fT Cob
VCE=10V, I I VCE=5V, I VCB=6V, I
B=1mA
E=-10mA E=0,
f =1MHz
ISAHAYA ELECTRONICSCORPORATION
Transistor
For High Frequency Amplify Application Silicon NPN Epitaxial Type (SuperMini type)
C o m m o t p u t n emitter ou
20
2SC5626
Common emitter transfer
180 A 18 160 A 140 A 120 A 100 A 80 A 60 A Ta=25
100 VCE=6V Ta=25
16 14
10
12 10 8
1
6 4 2
40 A
20 A
0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V base to collector voltage VBE(V) BE(V)
0 0 2 4 6 8 10 12 14 16
IB=0 A 18 20
VCE(V collector to emitter voltage ) VCE(V)
DC forward current gain t VS. collector curren
10000 Ta=25 VCE=10V 1000
1 10
collector to emitter voltage V S . c o lr r e n t lector cu
Ta=25 IC/IB=10/1
100
0.1
10
1 0.1 110 100 1000
0.01 0.11 10 100
collector current I
IC(mA) C(mA)
collector I IC(mA) current C(mA)
collector output/input capacitance V S . C o l t a g e lector to Base Vol
100.0
Gain band width product VS. Emitter current
10000 V CE=5V Ta=25
f=1MHz IE=0A IC=0A Ta=25 10.0
1000
Cob
100
1.0
Cib
10 0.1 1 10100
0.1 0.11.010.0 100.0 V CB(V) collector to base voltage VCB(V) V emitter to base voltage VEB(V) EB(V)
emitter IE(mA) current I E (mA)
ISAHAYA ELECTRONICSCORPORATION
Transistor
For High Frequency Amplify Application Silicon NPN Epitaxial Type (SuperMini type)
2SC5626
C o l l e c t o t i m e c o n s t a n t r to base VS. Emitter current
100 VCB=5V f=31.8MHz Ta=25
10
1 0.1 1.0 10.0
emitter I IE(mA) current E(mA)
ISAHAYA ELECTRONICSCORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Jan.2003

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