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HMC690
v04.0709
10 Gbps TRANSIMPEDANCE AMPLIFIER
Typical Applications
The HMC690 is ideal for: * SONET OC-192 and SDH STM-64 Transponders * 10 Gbps Ethernet * Broadband instrumentation * Short, intermediate and long reach optical receiver modules
Features
Supports data rates up to 11.3 Gbps 1.25 Kohm differential gain +3.3 V single power supply AC or DC coupled outputs 11 pA/Hz input referred noise density 3 mA p-p overload Average input power monitoring
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TRANSIMPEDANCE AMPLIFIERS - CHIP
Functional Diagram
Output offset adjustment Die Size: 0.68 x 1.14 x 0.18mm
General Description
The HMC690 is 10 Gbps transimpedance amplifier designed for SONET OC-192 / SDH STM-64, 10GbE and 10Gbps systems employing optical amplifiers. It supports data rates up to 11.3 Gbps. This amplifier provides a differential output voltage that is proportional to an applied current at its input port. This current is typically provided by a photodiode. Operating from a single +3.3V supply, the HMC690 features low input referred noise, and is designed for driving a CDR or a typical transceiver directly. The RSSI output can be used for monitoring average input power. This device also features a DC offset control, which enables output signal level adjustment for asymmetrical signals. Additional features include an integrated 300 filter resistor for photo-diode supply voltage and an extended linear range[2] option.
Electrical Specifi cations, TA = +25 C, Vcc1 = Vcc2 = +3.3V [1]
Parameter AC Specifications Max Data Rate Small Signal Transimpedance (ZT) Output Amplitude Differential peak-to-peak Small Signal Zt BW Input Referred Noise Density Noise Density @ 5 GHz Input Referred RMS Noise Added p-p Deterministic Jitter Random Jitter Rise Time IIN > 1 mA 20 - 80% 17 300 21 @ 8 GHz Bandwidth 13.4 1.0 10 500 25 14.7 pA/Hz uA rms ps fs rms ps Differential p-p @ 500 MHz For IIN > 1 mA 3-dB Upper LImit Noise Density @ 1 GHz 11.3 1.1 430 1.25 500 7.5 11.2 13.5 1.55 560 Gbps kOhm mV GHz pA/Hz Conditions Min. Typ. Max. Units
[1] Lin_en Open [2] Please see Pin Description table for further explanation of the extended linear range option available on Pin 9.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC690
v04.0709
10 Gbps TRANSIMPEDANCE AMPLIFIER
Electrical Specifi cations (Conditions)
Parameter Fall Time Output Return Loss Zt Group Delay Variation Linear Input Range Input Overdrive Optical Sensitivity [1] DC Specifications Power Supply Supply Current OFF ADJ Sensitivity RSSI Sensitivity Open Circuit Input DC Level 0.95 3.0 77 3.3 92 780 -1 1.1 3.6 106 V mA mV/V mA/V V @ 10 Gbps (P = 0.9A/W, re = 9 dB, BER = 1e-12) Conditions 80% - 20% F<10 GHz Min. 19 10 20 300 3 -20 Typ. 22 Max. 28 Units ps dB ps uA p-p mA p-p dBm
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TRANSIMPEDANCE AMPLIFIERS - CHIP
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[1] Optical receiver sensitivity depends on packaging, photodiode type, BER value and input signal eye quality.
Photodiode Specifi cation Assumptions
Photodiode Capacitance: (Cpd) = 220 fF Photodiode and bond wire parasitic inductance: (Ls) = 800 pH Photodiode Resistance: (Rs) = 20 Ohm Photodiode Responsivity: (p) = 0.8 A/W
Differential Output Voltage vs. Input Current
DIFFERENTIAL OUTPUT AMPLITUDE (mV) 600 500 400 300 200 100 0 0 500 1000 1500 2000 2500 3000 PEAK TO PEAK INPUT CURRENT (uA)
Differential Output Voltage vs. Temperature
DIFFERENTIAL OUTPUT AMPLITUDE (mV) 515
505
495
485
475 -60
-40
-20
0
20
40
60
80
100
TEMPERATURE (deg C)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC690
v04.0709
10 Gbps TRANSIMPEDANCE AMPLIFIER
RMS Jitter vs. Input Current [1]
3.5 PEAK TO PEAK JITTER (ps) 0 200 400 600 800 1000 1200 1400 1600 1800 3 RMS JITTER (ps) 2.5 2 1.5 1 0.5 0 PEAK TO PEAK INPUT CURRENT (uA) 0 0 500 1000 1500 2000 2500 3000 PEAK TO PEAK INPUT CURRENT (uA)
Peak to Peak Jitter vs. Peak to Peak Input Current [2]
25
20
15
10
5
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TRANSIMPEDANCE AMPLIFIERS - CHIP
Rise Time vs. Peak to Peak Input Current
30 25 20 15 10 5 0 0 500 1000 1500 2000 2500 3000 PEAK TO PEAK INPUT CURRENT (uA)
Fall Time vs. Peak to Peak Input Current
30 25 FALL TIME (ps) 20 15 10 5 0 0 500 1000 1500 2000 2500 3000 PEAK TO PEAK INPUT CURRENT (uA)
Transimpedance vs. Frequency Over Temperature [3]
70 TRANSIMPEDANCE (dB-Ohm) 60
RISE TIME (ps)
Output Return Loss vs. Frequency Over Temperature [3]
20
10 50 40 30 20 10 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) -30 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz)
+25C +85C - 55C
RETURN LOSS (dB)
0
+25C +85C - 55C
-10
-20
[1] Measured with 10 Gbps 10101 pattern with an estimated bondwire parasitic inductance of 1 nH, source jitter not de-embedded. [2] Measured with PRBS 215-1 pattern at 10 Gbps with an estimated bondwire parasitic inductance of 1 nH. Source jitter not de-embedded. [3] Single-Ended OUTN
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC690
v04.0709
10 Gbps TRANSIMPEDANCE AMPLIFIER
RSSI Output Voltage vs. Input Current Over Temperature
3.5 3 2.5 RSSI (V) 2 1.5 1 0.5 0 0 200 400 600 800 1000 1200 1400 INPUT CURRENT (uA)
+25C +85C - 55C
Output Offset Voltage vs. DC Offset Control Voltage Over Temperature
0.6 0.4 OUTPUT OFFSET (V) 0.2 0 -0.2 -0.4 -0.6 1.6
+25C +85C - 55C
1.8
2
2.2
2.4
2.6
2.8
3
3.2
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TRANSIMPEDANCE AMPLIFIERS - CHIP
5-5
DC OFFSET CONTROL VOLTAGE (V)
Eye Diagram [4]
[1] Measured with 10 Gbps 10101 pattern with an estimated bondwire parasitic inductance of 1 nH, source jitter not de-embedded. [2] Measured with PRBS 215-1 pattern at 10 Gbps with an estimated bondwire parasitic inductance of 1 nH. Source jitter not de-embedded. [3] Single-Ended OUTN [4] Output Eye measured on Eval board with 1 mA p-p input current. (10 Gbps), 25C, 3.3V, 223-1 pattern
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC690
v04.0709
10 Gbps TRANSIMPEDANCE AMPLIFIER
Supply Current vs. Supply Voltage Over Temperature
120 110 100 90 80 70
+25C +85C - 55C
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TRANSIMPEDANCE AMPLIFIERS - CHIP
SUPPLY CURRENT (mA)
60 3.1
3.2
3.3 SUPPLY VOLTAGE (V)
3.4
3.5
Optical Sensitivity Calculation
Optical sensitivity is determined from the input-referred rms noise current, IN. To achieve a bit error rate of 1E-12 , the signal-to-noise ratio must be 14:1.
S = 10 log Where S SNR IN re
( SNR x IN x rere+- 11 x 1000) dBm 2
= sensitivity (dBm) = signal to noise ratio (dB) = input-referred rms noise current (A) = photodetector responsitivity (A/W) = extinction ratio (dB)
Optical Minimum Output Swing at Sensitivity Limit Calculation
The typical optical sensitivity is -19 dBm. At the input level, the voltage swing at output of the HMC690 is calculated as follows: Save = 10 log Where Save OMA re = average sensitivity (dBm) = optical modulation amplitude (Wp-p) = extinction ratio (dB)
( OMA x re + 11 ) 2 re -
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC690
v04.0709
10 Gbps TRANSIMPEDANCE AMPLIFIER
Absolute Maximum Ratings
Supply Voltage Off_adj Voltage Lin_EN Voltage Continuous Input Current Junction Temperature Continuous Pdiss (T=85 C) (derate 9 mW/ C Above +85 C Thermal Resistance (Junction to die bottom) Storage Temperature Operating Temperature 4V 4V 4V 8 mA 125 C 0.36 W 111 C/W -65 to 120 C -40 to +85 C
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TRANSIMPEDANCE AMPLIFIERS - CHIP
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Outline
Die Packaging Information
Standard WP-26 (Waffle Pack) [2]
[1]
Alternate
[1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC690
v04.0709
10 Gbps TRANSIMPEDANCE AMPLIFIER
Pad Descriptions
Pad Number 1, 6, 13 Function GND Description Ground connection for TIA. Interface Schematic
2
TEST
Test Input. This pad is connected internally to IN thru 1k. No external connection required.
3
IN
TIA Input.
5
4 FILTER Vcc1 Vcc2
Provides bias voltage for photo diode (PD) thru a 300 resistor for Vcc1. Power Supply for input stage and PD. Power supply for output buffers. HMC690 has an extended linear range feature. With this feature disabled (pin 9 floating), the HMC690 operates linearly for inputs less than 300 Ap-p. For input currents greater than 300 Ap-p, the HMC690 begins to operate within a saturated region. For input currents greater than 1 mA-p-p, the output is fully saturated. Enabling (pin 9 connected to 3.3V) this feature increases linear range of the device up to 350 A increasing nominal supply current from 92 mA to 98 mA
TRANSIMPEDANCE AMPLIFIERS - CHIP
5, 7 8, 15
9
Lin_EN
10
Off_adj
DC offset control. Voltage at this pad sets output DC offset. When it is floating DC offset is at 0V.
11
OUTP
Non-inverted data output with 50 back termination.
12
OUTN
Inverted data output with 50 back termination.
14
RSSI
Received signal strength indicator. This pin provides a voltage proportional to the DC input current. This voltage should be monitored during assembly to optimally align the PD in the optical environment.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC690
v04.0709
10 Gbps TRANSIMPEDANCE AMPLIFIER
Pad Descriptions (Continued)
Pad Number 16 Function CL2 Description Interface Schematic
17
CL1
Connect a capacitor to ground to increase the on-chip DC-cancellation loop time constant. 0.1 F is recommended.
5
Application Circuit
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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TRANSIMPEDANCE AMPLIFIERS - CHIP
HMC690
v04.0709
10 Gbps TRANSIMPEDANCE AMPLIFIER
Assembly Diagram
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TRANSIMPEDANCE AMPLIFIERS - CHIP
5 - 10
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC690
v04.0709
10 Gbps TRANSIMPEDANCE AMPLIFIER
Mounting & Bonding Techniques for Millimeterwave MMICs
The die should be attached directly to the ground plane with epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.25mm (10 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
0.18mm (0.007") Thick MMIC
Ribbon Bond 0.076mm (0.003")
RF Ground Plane
Handling Precautions
Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
0.25mm (0.010") Thick Alumina Thin Film Substrate Figure 1.
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TRANSIMPEDANCE AMPLIFIERS - CHIP
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Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers.
Mounting
The chip is not back-metallized and should be die mounted with epoxy. The mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001" (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

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