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| TO-92 Plastic-Encapsulate Transistors S9014 TO-92 1. EMITTER TRANSISTOR (NPN) FEATURES High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9015 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 50 45 5 0.1 0.45 150 -55-150 Units V V V A W 123 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Test conditions MIN 50 45 5 0.1 0.1 0.1 60 1000 0.3 1 150 V V MHz TYP MAX UNIT V V V A A A IC=100A, IE=0 IC= 1mA, IB=0 IE=100A, IC=0 VCB=50V, IE=0 VCE=35V, IB=0 VEB= 5V, IC=0 VCE=5V, IC= 1mA IC=100mA, IB= 5mA IC=100mA, IB= 5mA VCE=5V, IC= 10mA f=30MHz CLASSIFICATION OF Rank Range hFE(1) A 60-150 B 100-300 C 200-600 D 400-1000 Typical Characteristics S9014 |
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