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SMD ESD Protection Diode
SMD Diodes Specialist
CPDVR083V3U-HF
RoHS Device
Features
Halogen free. IEC61000-4-2 (ESD)15kV(Contact),20kV(Air). Working voltage: 3.3V Low leakage current. Low operating and clamping voltages.
0.067(1.70) 0.059(1.50)
SOT-383F(VR8)
0.086(2.20) 0.079(2.00)
Mechanical data
Case: SOT-383F standard package,molded plastic. Terminals: Gold plated/Nipd, solderable per MIL-STD-750,method 2026. Mounting position: Any
0.059(1.50)Typ.
Circuit Diagram
1 8 2 7 3 6 4 5
0.008(0.20) Typ.
0.022(0.55) 0.018(0.45)
0.012(0.30) Typ.
Package 8 7
GND
0.014(0.35) Typ.
Dimensions in inches and (millimeters)
6
5
GND
1
2
3
4
REV:A
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Page 1
Comchip Technology CO., LTD.
SMD ESD Protection Diode
SMD Diodes Specialist
Maximum Rating (at TA=25 C unless otherwise noted)
O
Parameter
Peak pulse power ( tp = 8/20 us) Peak pulse current ( tp = 8/20 us) ESD per IEC 61000-4-2(Air) ESD per IEC 61000-4-2(Contact) Operating temperature Storage temperature
Symbol
PPP IPP VESD Tj TSTG
Value
40 5 20 15 -55 to +125 -55 to +125
Unit
W A kV
O
C C
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
O
Parameter
Reverse stand-off voltage Punch-through voltage Snap-back voltage Reverse leakage current
Conditions
IPT = 2uA ISB = 50mA VRWM = 3.3V IPP = 1 A, tp=8/20us, Any Channel Pin to Ground
Symbol Min Typ Max Unit
VRWM VPT VSB IR VC VC VCR Cj Cj 25 14 3.5 2.8 0.05 0.5 5.5 8.0 2.4 30 3.3 V V V uA V V V pF pF
Clamping voltage IPP = 5 A, tp=8/20us, Any Channel Pin to Ground Reverse clamping voltage IPPR = 1 A, tp=8/20us, Ground to Any Channel Pin VR = 0 V, f = 1MHz Any Channel Pin to Ground Junction capacitance VR = 3.3 V, f = 1MHz Any Channel Pin to Ground
REV:A
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Comchip Technology CO., LTD.
SMD ESD Protection Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CPDVR083V3U-HF)
Fig. 1 - Non-repetitive max. peak pulse power vs. pulse time
Max. peak pulse power-PPP(kW )
1
Fig. 2 - Power rating derating curve
110 100 90 80
Power rating (%)
100
70 60 50 40 30 20 10
0.1
0.01 0.1 1 10 1000
0 0 25 50 75 100
O
125
150
Pulse duration-tp(us)
Ambient temperature ( C )
Fig.3 - Clamping voltage vs. peak pulse current
16 14 10 12
Fig.4 - Forward voltage vs. Forward current
Clamping voltage (V)
Forward voltage (V)
12 10 8 6 4 2 0 0 1 2 3 4 5 6 Waveform Parameters: tr=8us td=20us
Waveform Parameters: tr=8us td=20us
8
6
4
2
0 0 1 2 3 4 5 6
Peak pulse current(A)
Forward current(A)
Fig.5 - Junction capacitance vs. reverse voltage
30
Normalized capacitance - Cj (pF)
f = 1MHz 25 Line-to-Gnd 20
15
10
Line-to-Line
5
0 0 0.5 1 1.5 2 2.5 3 3.5
Reverse voltage (V)
REV:A
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Comchip Technology CO., LTD.
SMD ESD Protection Diode
SMD Diodes Specialist
Reel Taping Specification
P0 P1 d Index hole E T
F B P A
W C
12 0
o
D2
D1 D
W1
Trailer ....... .......
10 pitches (min)
Device ....... ....... ....... .......
Leader ....... .......
10 pitches (min)
End
Start
Direction of Feed
SYMBOL
A
1.96 0.10
0.077 0.004
B
2.31 0.10
0.091 0.004
C
0.74 0.10
0.029 0.004
d
1.55 + 0.10
0.061 + 0.004
D
178 1
7.008 0.04
D1
60.0 MIN.
2.362 MIN.
D2
13.0 0.20
0.512 0.008
SOT-383F
(mm) (inch)
SYMBOL
E
1.75 0.10
0.069 0.004
F
3.50 0.05
0.138 0.002
P
4.00 0.10
0.157 0.004
P0
4.00 0.10
0.157 0.004
P1
2.00 0.10
0.079 0.004
T
0.22 0.05
0.009 0.002
W
8.00 0.20
0.315 0.008
W1
13.5 MAX.
0.531 MAX.
SOT-383F
(mm) (inch)
REV:A
QW-G7016
Page 4
Comchip Technology CO., LTD.
SMD ESD Protection Diode
SMD Diodes Specialist
Marking Code
Part Number CPDVR083V3U-HF Marking Code
E3V3
E3V3
Suggested PAD Layout
SOT-383F(VR8)
SIZE (mm) A B C D E F 0.630 0.300 0.500 0.450 2.150 1.800 (inch) 0.025 0.012
D
B
C
E
0.020 0.018 0.085 0.071
A F
Standard Package
Qty per Reel Case Type (Pcs)
SOT-383F(VR8)
Reel Size (inch) 7
3000
REV:A
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Page 5
Comchip Technology CO., LTD.

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