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HAT2167N
Silicon N Channel Power MOS FET Power Switching
REJ03G1681-0200 Rev.2.00 May 27, 2008
Features
* * * * * High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i)
1(S) 2(S) 3(S) 4(G)
5678 DDDD
2X XX
8(D) 7(D) 6(D) 5(D)
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
SSS 123
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal resistance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C Symbol VDSS VGSS ID Note1 ID(pulse) IDR IAP Note 2 EAR Note 2 Pch Note3 ch-C Tch Tstg Ratings 30 20 40 160 40 20 40 20 6.25 150 -55 to +150 Unit V V A A A A mJ W
C/W C C
REJ03G1681-0200 Rev.2.00 May 27, 2008 Page 1 of 6
HAT2167N
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 20 -- -- 1.0 -- -- 42 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 4.5 6.4 70 2700 620 200 0.5 17 8 3.7 11 30 45 6 0.85 30 Max -- -- 10 1 2.5 5.8 9.6 -- -- -- -- -- -- -- -- -- -- -- -- 1.10 -- Unit V V A A V m m S pF pF pF nc nc nc ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 20 A, VGS = 10 V Note4 ID = 20 A, VGS = 4.5 V Note4 ID = 20 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 40 A VGS = 10 V, ID = 20 A VDD 10 V RL = 0.5 Rg = 4.7 IF = 40 A, VGS = 0 Note4 IF = 40 A, VGS = 0 diF/ dt = 100 A/ s
REJ03G1681-0200 Rev.2.00 May 27, 2008 Page 2 of 6
HAT2167N
Main Characteristics
Power vs. Temperature Derating
40
500
Maximum Safe Operation Area
10 s
DC
Pch (W)
100
Drain Current ID (A)
30
Channel Dissipation
10
1m =1 s Op 0m era tio s n
PW
Tc =2
10
0
s
20
1
Operation in this area is 0.1 limited by RDS(on) Ta = 25C 1 shot Pulse
5 C
10
0
50
100
150
200
0.01 0.1
0.3
1
3
10
30
100
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
50
Typical Transfer Characteristics
VDS = 10 V Pulse Test
10 V
3.0 V
Pulse Test 2.8 V
Drain Current ID (A)
4.5 V
30
2.6 V
20
Drain Current ID (A)
40
Tc = 75C 25C
2.4 V
10
VGS = 2.2 V
0 2 4 6 8 10
0 1 2
-25C 3 4 5
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source Voltage VDS(on) (mV)
Drain to Source On State Resistance RDS(on) (m)
500
10
VGS = 4.5 V
Pulse Test
400
5
10 V
300
200
ID = 50 A
2
100
20 A 10 A
Pulse Test
1 1
0.3
0
4
8
12
16
20
10
3
100
30
1000
Gate to Source Voltage VGS (V)
Drain Current ID (A)
REJ03G1681-0200 Rev.2.00 May 27, 2008 Page 3 of 6
HAT2167N
Static Drain to Source on State Resistance vs. Temperature
10
Pulse Test
Static Drain to Source on State Resistance RDS(on) (m)
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
100 30 10 3 1 0.3 0.1 0.1
Tc = -25C 25C
ID = 50 A
10 A, 20A
8
VGS = 4.5 V
75C
6
10 A, 20 A, 50 A 10 V
4
2 0 -25
VDS = 10 V Pulse Test
0
25
50
75
100 125 150
0.3
1
3
10
30
100
Case Temperature
Tc
(C)
Drain Current ID (A)
Typical Capacitance vs. Drain to Source Voltage
10000 3000 1000 Coss 300 Crss 100 30 10 0 Ciss
Body-Drain Diode Reverse Recovery Time
Reverse Recovery Time trr (ns)
100
50
20
di/dt = 100 A/s VGS = 0, Ta = 25C
Capacitance C (pF)
10 0.1
VGS = 0 f = 1 MHz 5 10 15 20 25 30
0.3
1
3
10
30
100
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
50
ID= 30 A VDD = 25 V 10 V 5V VDS VGS
Switching Characteristics
20
1000 300 100 30
td(on) td(off) tr
40
16
30
12
20
8
Switching Time t (ns)
10
tf
10
VDD = 25 V 10 V 5V
4 0 100
3 1 0.1
VGS = 10 V, VDS = 10 V Rg = 4.7 , duty 1 %
0
20
40
60
80
0.3
1
3
10
30
100
Gate Charge Qg (nc)
Drain Current ID (A)
REJ03G1681-0200 Rev.2.00 May 27, 2008 Page 4 of 6
HAT2167N
Reverse Drain Current vs. Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)
50 50
IAP = 20 A VDD = 15 V duty < 0.1 % Rg 50
Maximum Avalanche Energy vs. Channel Temperature Derating
Reverse Drain Current IDR (A)
10 V
40
5V VGS = 0
40
30
30
20
20
10
Pulse Test
10 0 25
0
0.4
0.8
1.2
1.6
2.0
50
75
100
125
150
Source to Drain Voltage VSD (V)
Channel Temperature Tch (C)
Avalanche Test Circuit
VDS Monitor
L
Avalanche Waveform
1 L * IAP2 * 2 VDSS VDSS - VDD
EAR =
IAP Monitor
Rg
Vin 15 V
D. U. T
VDD
V(BR)DSS IAP
VDS
50
ID
0
VDD
Switching Time Test Circuit
Switching Time Waveform
Vin Monitor
Rg
Vout Monitor D.U.T. RL VDS = 10 V Vin Vout 10%
10%
90%
10% 90% td(off)
tf
Vin 10 V
90% td(on) tr
REJ03G1681-0200 Rev.2.00 May 27, 2008 Page 5 of 6
HAT2167N
Package Dimensions
Package Name LFPAK-i JEITA Package Code RENESAS Code PTSP0008DC-A Previous Code LFPAK-iV MASS[Typ.] 0.080g
4.9 5.3Max 8 5
0.25 - 0.03
+ 0.05
3.2
0.60 - 0.30
+ 0.25
1 3.3
4 0.20 - 0.03
+ 0.05
6.1 - 0.3
3.95
+ 0.1
0 - 8
1.1Max
0.07 - 0.04
+ 0.03
0.75Max 1.27 0.10 0.4 0.06 0.25 M ( Ni/Pd/Au plating )
Ordering Information
Part No. HAT2167N-EL-E Quantity 2500 pcs Taping Shipping Container
REJ03G1681-0200 Rev.2.00 May 27, 2008 Page 6 of 6
1.3Max
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .7.2

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