View FDPF6N60ZUT_4680366.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET
April 2009
UniFETTM
FDP6N60ZU / FDPF6N60ZUT
N-Channel MOSFET, FRFET
600V, 4.5A, 2 Features
* RDS(on) = 1.7 ( Typ.) @ VGS = 10V, ID = 2.25A * Low gate charge ( Typ. 14.5nC) * Low Crss ( Typ. 5pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * RoHS compliant
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G
GDS
TO-220 FDP Series
o
GD S
TO-220F FDPF Series
S
MOSFET Maximum Ratings TC = 25 C unless otherwise noted*
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 105 0.85 -55 to +150 300 4.5 2.7 18 150 4.5 10.5 20 33.8 0.27 FDP6N60ZU FDPF6N60ZUT 600 30 4.5* 2.7* 18* Units V V A A mJ A mJ V/ns W W/oC
o o
Single Pulsed Avalanche Energy
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP6N60ZU 1.2 0.5 62.5 FDPF6N60ZUT 3.7 62.5
o
Units C/W
(c)2009 Fairchild Semiconductor Corporation FDP6N60ZU / FDPF6N60ZUT Rev. A
1
www.fairchildsemi.com
FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET
Package Marking and Ordering Information
Device Marking FDP6N60ZU FDPF6N60ZUT Device FDP6N60ZU FDPF6N60ZUT Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25oC VDS = 600V, VGS = 0V VDS = 480V, TC = 125oC VGS = 30V, VDS = 0V 600 0.75 25 250 10 V V/oC A A
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 2.25A VDS = 40V, ID = 2.25A 3.0 1.7 3.5 5.0 2.0 V S
Dynamic Characteristics
Ciss Coss Crss Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 480V, ID = 4.5A VGS = 10V
(Note 4)
VDS = 25V, VGS = 0V f = 1MHz
-
650 75 5 14.5 4 6
865 100 10 20 -
pF pF pF nC nC nC
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 300V, ID = 4.5A RG = 25, VGS = 10V
(Note 4)
-
19 25 25 45
48 60 60 100
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 4.5A VGS = 0V, ISD = 4.5A dIF/dt = 100A/s 36 37 4.5 18 1.6 A A V ns nC
Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 15mH, IAS = 4.5A, VDD = 50V, RG = 25, Starting TJ = 25C 3: ISD 4.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4: Essentially Independent of Operating Temperature Typical Characteristics
FDP6N60ZU / FDPF6N60ZUT Rev. A
2
www.fairchildsemi.com
FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
20 10
ID,Drain Current[A]
VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
Figure 2. Transfer Characteristics
20 10
ID,Drain Current[A]
*Notes: 1. VDS = 20V 2. 250s Pulse Test
1
1
150 C 25 C
o
o
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
0.1 0.1
0.1
1 10 VDS,Drain-Source Voltage[V]
20
2
4 6 VGS,Gate-Source Voltage[V]
8
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
2.7
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
200 100
RDS(ON) [m], Drain-Source On-Resistance
2.4
IS, Reverse Drain Current [A]
2.1
VGS = 10V VGS = 20V
150 C
o
10
25 C
o
1.8
1.5 0 3
*Note: TC = 25 C
o
*Notes: 1. VGS = 0V
1
12
2. 250s Pulse Test
6 ID, Drain Current [A]
9
0
1 2 VSD, Body Diode Forward Voltage [V]
3
Figure 5. Capacitance Characteristics
1500
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VDS = 150V VDS = 300V VDS = 480V
8
Capacitances [pF]
1000
Coss
*Note: 1. VGS = 0V 2. f = 1MHz
6
Ciss
4
500
2
*Note: ID = 4.5A
Crss
0 0.1
0
1 10 VDS, Drain-Source Voltage [V]
30
0
5 10 Qg, Total Gate Charge [nC]
15
FDP6N60ZU / FDPF6N60ZUT Rev. A
3
www.fairchildsemi.com
FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.16 BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.12
ID, Drain Current [A]
Figure 8. Maximum Safe Operating Area - FDPF6N60ZUT
30
20s
10
100s 1ms
1.08 1.04 1.00 0.96 0.92 0.88 -100
*Notes: 1. VGS = 0V 2. ID = 250A
1
Operation in This Area is Limited by R DS(on)
10ms
DC
0.1
*Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
0.01
-50 0 50 100 150 o TJ, Junction Temperature [ C] 200
1
10 100 VDS, Drain-Source Voltage [V]
1000
Figure 9. Maximum Drain Current vs. Case Temperature
6
ID, Drain Current [A]
4
Limited by package
2
0 25
50 75 100 125 o TC, Case Temperature [ C]
150
Figure 10. Transient Thermal Response Curve - FDPF6N60ZUT
5
Thermal Response [ZJC]
0.5
1
0.2 0.1 0.05
PDM t1
0.1
0.02 0.01 Single pulse
*Notes:
t2
o
1. ZJC(t) = 3.7 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
0.01 -5 10
10
-4
10 10 10 1 Rectangular Pulse Duration [sec]
-3
-2
-1
10
10
2
FDP6N60ZU / FDPF6N60ZUT Rev. A
4
www.fairchildsemi.com
FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP6N60ZU / FDPF6N60ZUT Rev. A
5
www.fairchildsemi.com
FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/ d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
FDP6N60ZU / FDPF6N60ZUT Rev. A
6
www.fairchildsemi.com
FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
FDP6N60ZU / FDPF6N60ZUT Rev. A
7
www.fairchildsemi.com
FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET
Mechanical Dimensions
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47
9.75 0.30
0.80 0.10
(3 0 )
0.35 0.10 2.54TYP [2.54 0.20]
#1 2.54TYP [2.54 0.20]
4.70 0.20
0.50 -0.05
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
15.87 0.20
www.fairchildsemi.com
FDP6N60ZU / FDPF6N60ZUT Rev. A
8
FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPMTM F-PFSTM PowerTrench(R) The Power Franchise(R) PowerXSTM Build it NowTM FRFET(R) (R) SM Global Power Resource Programmable Active DroopTM CorePLUSTM (R) QFET CorePOWERTM Green FPSTM TinyBoostTM CROSSVOLTTM QSTM Green FPSTM e-SeriesTM TinyBuckTM CTLTM Quiet SeriesTM GmaxTM TinyLogic(R) Current Transfer LogicTM RapidConfigureTM GTOTM (R) TINYOPTOTM EcoSPARK IntelliMAXTM TinyPowerTM EfficentMaxTM ISOPLANARTM TM TinyPWMTM Saving our world, 1mW /W /kW at a timeTM EZSWITCHTM * MegaBuckTM TinyWireTM TM* SmartMaxTM MICROCOUPLERTM TriFault DetectTM SMART STARTTM MicroFETTM (R) TRUECURRENTTM* SPM MicroPakTM (R) SerDesTM STEALTHTM MillerDriveTM (R) Fairchild SuperFETTM MotionMaxTM (R) Fairchild Semiconductor SuperSOTTM-3 Motion-SPMTM FACT Quiet SeriesTM UHC(R) SuperSOTTM-6 OPTOLOGIC(R) (R) (R) FACT OPTOPLANAR Ultra FRFETTM SuperSOTTM-8 (R) FAST(R) UniFETTM SupreMOSTM FastvCoreTM VCXTM SyncFETTM FETBenchTM VisualMaxTM Sync-LockTM PDP SPMTM (R) FlashWriter * XSTM (R)* Power-SPMTM FPSTM
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I40
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FDP6N60ZU / FDPF6N60ZUT Rev. A
9
www.fairchildsemi.com

▲Up To Search▲

Price & Availability of FDPF6N60ZUT

	To Download FDPF6N60ZUT Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .