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| Shantou Huashan Electronic Devices Co.,Ltd. HTF8A80 NON INSULATED TYPE TRIAC (TO - 220 F PACKAGE) Features * Repetitive Peak Off-State Voltage: 800V * R.M.S On-state Current(IT(RMS)=8A) * High Commutation dv/dt General Description TO-220F The Triac HTP8A80 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. 12 Absolute Maximum Ratings=25ae(c) Ta Operating 3 T stg Storage Temperature----------------------- - 40~125ae Tj Junction Temperature -------------------- 40~125ae PGMPeak Gate Power Dissipation---------------------- 5W VDRM Repetitive Peak Off-State Voltage--------------------800V IT RMS(c) .M.S On-State Current R Ta=105ae(c) ------------------ 8A VG M Peak Gate Voltage ---------------------10V I G M P e a k G a t e C u r r e n t - - - - - - - - - - - - - - - - - - - - 2.0A ITSM Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)---80/88A Electrical Characteristics=25ae Ta (c) Items Repetitive Peak Off-State Current Peak On-State Voltage Gate Trigger Currentn(c) Gate Trigger Currento(c) Gate Trigger Currento(c) Gate Trigger Voltagen(c) Gate Trigger Voltageo(c) Gate Trigger Voltageo(c) Non-Trigger Gate Voltage Critical Rate of Rise of Off-State Voltage at Commutation Holding Current Thermal Resistance 0.2 10 Min. Typ. Max. 2.0 Unit mA Conditions VD =VDRM, Single Phase,Half Wave, TJ=125ae IT=12A, Inst. Measurement VD =6V, RL =10 ohm VD =6V, RL =10 ohm VD =6V, RL =10 ohm VD =6V, RL =10 ohm VD =6V, RL =10 ohm VD =6V, RL =10 ohm T J=125ae D =1/2VDRM ,V T J=125ae D =400V ,V (di/dt)c=-4A/ms IH 15 3.7 mA ae /W Junction to case Symbol IDRM VTM I+GT1 I- GT1 I-GT3 V+ GT1 V- GT1 V- GT3 VGD (dv/dt)c 1.4 30 30 30 1.5 1.5 1.5 V mA mA mA V V V V V/S Rth(j-c) Shantou Huashan Electronic Devices Co.,Ltd. HTF8A80 Shantou Huashan Electronic Devices Co.,Ltd. HTF8A80 |
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