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SEMICONDUCTOR
TECHNICAL DATA
DARLINGTON TRANSISTOR. SOLENOID DRIVER. MOTOR DRIVER.
A
KTD2686
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
High DC Current Gain : hFE=2000(Min.) (VCE=2V, IC=1A)
C
H G
J B E
MAXIMUM RATINGS (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range t=10S DC DC Pulse
)
RATING 50 60 8 1 3 0.5 2.5 1 150 -55 150 10 UNIT V V V A A W
D K F F
D
SYMBOL VCBO VCEO VEBO IC ICP IB PC * Tj Tstg
1
2
3
DIM A B C D E F G H J K
MILLIMETERS 4.70 MAX _ 2.50 + 0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX _ 1.50 + 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
SOT-89
* Pc : Package mounted on FR4 board (Cu area : 645 , glass epoxy, t=1.6 )
EQUIVALENT CIRCUIT
COLLECTOR
Marking
Lot No.
Type Name
A2
BASE 5k - 300 -
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn On Time Switching Time Storage Time Fall Time SYMBOL ICBO ICEO IEBO V(BR)CEO hFE VCE(sat)1 VCE(sat)2 VBE(sat) ton
20s
TEST CONDITION VCB=45V, IE=0 VCE=45V, IB=0 VEB=8V, IC=0 IC=10mA, IB=0 VCE=2V, IC=1A IC=0.5A, IB=1mA IC=1A, IB=1mA IC=1A, IB=1mA
VCC =30V 30
MIN. 0.8 50 2000 OUTPUT
TYP. 60 0.4 4.0 0.6
MAX. 10 10 4 70 1.2 1.5 2.0 -
UNIT A A mA V
V V
tstg tf
5V 0V DUTY CYCLE < 1% = INPUT
-
S
2004. 11. 22
Revision No : 1
1/2
KTD2686
I C - V CE
3.2 COLLECTOR CURRENT IC (A)
3
I C - V BE
COLLECTOR CURRENT IC (A)
COMMON EMITTER Ta=25 C
1
3.2
0.5 0.3
2.4
2.4
COMMON EMITTER VCE =2V
1.6
0.22
1.6
Ta=2 5C
0.20
0.8
I B =0.18mA
0.8
Ta=100 C
Ta=-55 C
0
0
2
4
6
8
0
0
0.8
1.6
2.4
3.2
COLLECTOR EMITTER VOLTAGE V CE (V)
BASE EMITTER VOLTAGE VBE (V)
h FE - I C
COLLECTOR EMITTER SATURATION VOLTAGE VCE(sat) (V) 10000 DC CURRENT GAIN h FE
COMMON 5000 EMITTER VCE =2V
00 =1 Ta C
V CE(sat) - I C
10 5 3
COMMON EMITTER I C /I B =500
3000
1000 500 300
C C 25 a= -55 T = Ta
1 0.5 0.3 0.1
Ta=-55 C Ta=25 C
0C Ta=10
100 0.03 0.05 0.1
0.3 0.5
1
3
5
10
0.3 0.5
1
3
5
10
COLLECTOR CURRENT I C (A)
COLLECTOR CURRENT I C (A)
SAFE OPERATING AREA V BE(sat) - I C
COLLECTOR EMITTER SATURATION VOLTAGE VBE(sat) (V) 10 5 3
Ta=55 C Ta=25 C
Ta=100 C
10 COLLECTOR CURRENT I C (A)
COMMON EMITTER I C /I B =500
I C MAX(Pulse)
ms *1 s 0m *1
1
I C MAX(Continuous)
DC
Op
1 0.5 0.3
era
tio
0.1
0.1
0.3 0.5
1
3
5
10
COLLECTOR CURRENT I C (A)
0.01 0.1
(* SINGLE NONREPETITIVE PULSE Ta=25 C ) CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON FR4 BOARD (Cu area : 645 mm2, glass epoxy, t=1.6mm)
n
1
10
100
COLLECTOR EMITTER VOLTAGE V CE (V)
2004. 11. 22
Revision No : 1
2/2

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