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4V Drive Nch MOSFET
RSH110N03
Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter.
Each lead has same dimensions
Dimensions (Unit : mm)
SOP8
Packaging specifications
Package Type RSH110N03 Code Basic ordering unit (pieces) Taping TB 2500
Inner circuit
(8) (7) (6) (5) (8) (7) (6) (5)
2 1
(1) (2) (3) (4)
(1)Source (2)Source (3)Source (4)Gate (5)Drain (6)Drain (7)Drain (8)Drain
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature
1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board.
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg
Limits 30 20 11 44 1.6 22 2 150 -55 to +150
Unit V V A A A A W C C
(1)
(2)
(3)
(4)
1 ESD PROTECTION DIODE 2 BODY DIODE
A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.
Thermal resistance
Parameter Channel to ambient
Mounted on a ceramic board.
Symbol Rth (ch-a)
Limits 62.5
Unit C / W
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c 2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.12 - Rev.A
RSH110N03
Electrical characteristics (Ta=25C)
Parameter Symbol Min. - 30 - 1.0 - - - 8.0 - - - - - - - - - - Typ. - - - - 7.6 10.3 11.2 - 1300 410 250 9 17 60 30 17 3.3 7.1 Max. 10 - 1 2.5 10.7 14.5 15.7 - - - - - - - - - - - Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-starte resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Data Sheet
Unit A V A V m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=11A, VGS=10V ID=11A, VGS=4.5V ID=11A, VGS=4V ID=11A, VDS=10V VDS=10V VGS=0V f=1MHz ID=5.5A, VDD 15V VGS=10V RL=2.73 RG =10 VDD 15V VGS=5V ID=11A
RDS (on)
Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. 1.2
Unit V
Conditions IS=6.4A, VGS=0V
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c 2009 ROHM Co., Ltd. All rights reserved.
2/3
2009.12 - Rev.A
RSH110N03
Electrical characteristic curves
10000
Data Sheet
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
1000
Ciss
1000
tf td (off)
GATE-SOURCE VOLTAGE : VGS (V)
Ta=25C f=1MHz VGS=0V
10000
Ta=25C VDD=15V VGS=10V RG=10 Pulsed
8
Ta=25C 7 VDD=15V ID=11A 6 RG=10 Pulsed 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18
Coss
100
100
Crss
tr
10
td (on)
1 0.01
10 0.01
0.1
1
10
100
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
100
VDS=10V Pulsed
Ta=125C Ta=75C Ta=25C Ta= -25C
300 Ta=25C Pulsed 250 200 150 100 50 0
100 VGS=0V Pulsed
Ta=125C Ta=75C Ta=25C Ta= -25C
DRAIN CURRENT : ID (A)
10
SOURCE CURRENT : Is (A)
1
ID=11A ID=5.5A
10
1
0.1
0.01
0.1
0.001 0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
2
4
6
8
10
12
14
16
0.01 0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : VGS (V)
GATE-SOURCE VOLTAGE : VGS (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
Fig.6 Source Current vs. Source-Drain Voltage
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
VGS=10V Pulsed
Ta=125C Ta=75C Ta=25C Ta= -25C
VGS=4.5V Pulsed
Ta=125C Ta=75C Ta=25C Ta= -25C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
1000
1000
1000 VGS=4V Pulsed
Ta=125C Ta=75C Ta=25C Ta= -25C
100
100
100
10
10
10
1 0.1
1
10
100
1 0.1
1
10
100
1 0.1
1
10
100
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ()
Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ()
Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ()
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c 2009 ROHM Co., Ltd. All rights reserved.
3/3
2009.12 - Rev.A
Notice
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