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| Semiconductor TBN4228 Series Si NPN Transistor SOT-323 Unit in mm 2.10.1 1.250.05 Applications - VHF and UHF low noise amplifier 2.00.2 1.300.1 1 3 2 0.300.1 0.1 Min. Features - High gain bandwidth product fT = 9 GHz at VCE = 3 V, IC = 5 mA - High power gain |S21|2 = 6.6 dB at VCE = 3 V, IC = 5 mA, f = 2 GHz |S21|2 = 12 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz 0.900.1 NF = 1.9 dB at VCE = 3 V, IC = 5 mA, f = 2 GHz NF = 1.2 dB at VCE = 3 V, IC = 3 mA, f = 1 GHz Pin Configuration 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings (TA = 25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Operating Junction Temperature Storage Temperature Symbol BVCBO BVCEO BVEBO IC Ptot Tj Tstg Ratings 20 8 3 35 150 150 -65 ~ 150 Unit V V V mA mW Caution : Electro Static Discharge sensitive device 0~0.1 - Low noise figure 0.150.05 1 TBN4228 Series Electrical Characteristics (TA = 25 ) Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Insertion Power Gain Symbol ICBO IEBO hFE fT |S21|2 Test Conditions VCB = 15 V, IE = 0 mA VEB = 2 V, IC = 0 mA VCE = 3 V, IC = 5 mA VCE = 3 V, IC = 5 mA VCE = 3 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 10 mA, f = 1 GHz Noise Figure Reverse Transfer Capacitance NF Cre VCE = 3 V, IC = 5 mA, f = 2 GHz VCB = 3 V, IE = 0 mA, f = 1 MHz Min. 70 6.0 5.0 10.0 Typ. 100 9.0 6.6 12.0 1.9 0.5 Max. 0.5 0.5 250 3.0 0.8 dB pF GHz dB Unit hFE Classification Marking hFE Value SO2 70 - 140 SO1 125 - 250 Available Package Product TBN4228S TBN4228U TBN4228E TBN4228KF Package SOT-23 SOT-323 SOT-523 SOT-623F Unit in mm Dimension 2.9 1.3, 1.2t 2.0 1.25, 1.0t 1.6 0.8, 0.8t 1.4 0.8, 0.6t 2 TBN4228 Series Typical Characteristics ( TA = 25 , unless otherwise specified) Total Power Dissipation vs. Ambient Temperature 250 Reverse Transfer Capacitance vs. Collector to Base Voltage 0.8 Reverse Transfer Capacitance, Cre (pF) Total Power Dissipation, Ptot (mW) Free Air 200 f = 1 MHz 0.7 0.6 0.5 0.4 0.3 0.2 150 100 50 0 0 25 50 75 100 o 125 150 0 2 4 6 8 10 12 Ambient Temperature, TA ( C) Collector to Base Voltage, VCB (V) DC Current Gain vs. Collector Current 300 VCE = 3 V Collector Current vs. Base to Emitter Voltage 30 VCE = 3 V 25 100 Collector Current, IC (mA) 1 10 50 DC Current Gain, hFE 20 15 10 5 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 50 10 0.5 Collector Current, IC (mA) Base to Emitter Voltage, VBE (V) 3 TBN4228 Series Collector Current vs. Collector to Emitter Voltage 14 14 Gain Bandwidth Product vs. Collector Current VCE = 3 V f = 2 GHz Gain Bandwidth Product, fT (GHz) 12 12 10 8 6 4 2 0 Collector Current, IC (mA) 10 8 6 4 2 0 80 A 60 A 40 A IB = 20 A 0 1 2 3 4 5 1 10 50 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) Insertion Power Gain vs. Frequency 25 Insertion Power Gain vs. Collector Current 16 VCE = 3 V f = 1 GHz Insertion Power Gain, |S21| (dB) 20 Insertion Power Gian, |S21| (dB) VCE = 3 V IC = 5 mA 14 12 10 8 6 4 2 0 1 2 15 2 f = 2 GHz 10 5 0 0.1 1 5 10 50 Frequency (GHz) Collector Current, IC (mA) 4 TBN4228 Series Maximum Available Gain vs. Collector Current 20 VCE = 3 V f = 1 GHz 5 VCE = 3 V 4 Noise Figure vs. Collector Current Maximum Available Gain, MAG (dB) 18 16 14 12 10 8 6 4 2 0 1 Noise Figure, NF (dB) 3 f = 2 GHz 2 f = 1 GHz f = 2 GHz 1 10 50 0 0.5 1 10 50 Collector Current, IC (mA) Collector Current, IC (mA) Noise Parameter vs. Frequency (at VCE = 3 V, IC = 5 mA) Frequency (GHz) 0.9 1 1.5 2 Fmin (dB) 1.579 1.465 1.745 1.984 rn 0.493 0.474 0.446 0.364 opt Mag 0.5441 0.5147 0.4479 0.3423 Phase 24.21 30.26 38.57 47.01 Association gain (dB) 11.591 11.087 8.4 6.902 Gmax (dB) 15.517 14.827 10.687 8.926 5 TBN4228 Series Dimensions of TBN4228S in mm SOT-23 Dimensions of TBN4228E in mm SOT-523 Dimensions of TBN4228KF in mm SOT-623F 1.2 0.8 Pin Configuration (SOT-23, SOT-523, SOT-623F) Pin No. 1 2 Symbol B E C Description Base Emitter Collector 1 1.4 0.9 3 3 0.2 0.11 2 0.6 0~0.1 6 |
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