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APT50DL60BCT(G) 600V 50A
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Ultrasoft Recovery Rectifier Diode
PRODUCT APPLICATIONS
* Anti-Parallel Diode -Switchmode Power Supply -Inverters * Applications - Induction Heating * Resonant Mode Circuits -ZVS and ZCS Topologies - Phase Shifted Bridge
PRODUCT FEATURES
* Ultrasoft Recovery Times (trr) * Popular TO-247 Package or Surface Mount D3PAK Package * Ultra Low Forward Voltage * Low Leakage Current
PRODUCT BENEFITS
* Soft Switching - High Qrr * Low Noise Switching - Reduced Ringing * Higher Reliability Systems * Minimizes or eliminates snubber
1
3
2
1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2
MAXIMUM RATINGS
Symbol
VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ, TSTG TL
All Ratings per leg : TC = 25C unless otherwise specified.
Ratings Unit
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward current (TC = 115C, Duty Cycle = 0.5) RMS Forward Currrent (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3 ms) Operating and Storage Junction Temperature Range Lead Temperature for 10 Seconds
600
Volts
50 150 320 -55 to 175 C 300 Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
IF = 50A VF Forward Voltage IF = 100A IF = 50A, TJ = 125C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 600V VR = 600V, TJ = 125C 51
Min
Typ
1.25 2.0 1.25
Max
1.6
Unit
Volts
25 250 pF
052-6316 Rev B 12 - 2008
A
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol
trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM
APT50DL60BCT(G)
Min Typ
52 ns 399 IF = 50A, diF/dt = -200A/s VR = 400V, TC = 25C 1498 9 449 IF = 50A, diF/dt = -200A/s VR = 400V, TC = 125C 3734 15 284 IF = 50A, diF/dt = -1000A/s VR = 400V, TC = 125C 5134 34 nC Amps ns nC Amps ns nC Amps
Characteristic / Test Conditions
Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C
Max
Unit
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RJC WT
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Min
Typ
Max
0.63
Unit
C/W oz g
0.22 Package Weight 5.9 10 Torque Maximum Mounting Torque 1.1
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
lb*in N*m
0.7 ZJC, THERMAL IMPEDANCE (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0
Note:
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ (C)
052-6316 Rev B 12 - 2008
0.316
Dissipated Power (Watts)
TC (C)
0.312
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
0.0046
0.1483
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
ZEXT
TYPICAL PERFORMANCE CURVES
120 TJ= 125C 100 IF, FORWARD CURRENT (A) TJ= 55C 80 TJ= 25C 60 40 20 0 TJ= 150C trr, COLLECTOR CURRENT (A) 700 100A 600 500 400 300 200 100 0 25A
APT50DL60BCT(G)
T = 125C J V = 400V
R
50A
0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage
T = 125C J V = 400V
R
0
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 45 IRRM, REVERSE RECOVERY CURRENT (A)
T = 125C J V = 400V
R
Qrr, REVERSE RECOVERY CHARGE (nC)
8000 7000 6000 5000 4000 3000 2000 1000
100A
40 35 30 25 20 15 10 5 0
50A 100A
50A 25A
25A
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 0.8 0.6 0.4 0.2 0 tRR IRRM
0
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 140 120 100 IF(AV) (A) 80 60 40 20 0
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
QRR
Duty cycle = 0.5 TJ = 126C
0
25
50
75
100
125
150
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (C) FIGURE 6, Dynamic Parameters vs Junction Temperature 500 CJ, JUNCTION CAPACITANCE (pF)
Case Temperature (C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature
450 400 350 300
052-6316 Rev B 12 - 2008
250 200 150 100 50 10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage 0 0
Vr +18V 0V D.U.T. diF /dt Adjust
APT50DL60BCT(G)
trr/Qrr Waveform
CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
6
5 3 2
0.25 IRRM Slope = diM/dt
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
5 6
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 (BCT) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Common Cathode
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
052-6316 Rev B 12 - 2008
Anode 1 Common Cathode Anode 2
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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