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 EIC1212-8
UPDATED 01/04/2006
12.20-12.70 GHz 8-Watt Internally Matched Power FET
Excelics
EIC1212-8
.827.010 .669
.120 MIN
FEATURES
* * * * * * * * 12.20- 12.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 27% Power Added Efficiency -46 dBc IM3 at PO = 28.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH
.024 .421
YYWW
SN
.120 MIN
.125 .508.008 .442 .168.010
ALL DIMENSIONS IN INCHES
.004 .063 .004 .105.008
ELECTRICAL CHARACTERISTICS (Ta = 25C)
SYMBOL P1dB G1dB G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 12.20-12.70GHz VDS = 10 V, IDSQ 2200mA Gain at 1dB Compression f = 12.20-12.70GHz VDS = 10 V, IDSQ 2200mA Gain Flatness f = 12.20-12.70GHz VDS = 10 V, IDSQ 2200mA Power Added Efficiency at 1dB Compression f = 12.20-12.70GHz VDS = 10 V, IDSQ 2200mA Drain Current at 1dB Compression f = 12.20-12.70GHz Output 3rd Order Intermodulation Distortion f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2 VDS = 10 V, IDSQ 65% IDSS f = 12.70GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance
3
Caution! ESD sensitive device. MIN
38.5 5.5
TYP
39.0 6.5
MAX
UNITS
dBm dB
0.6 27 2300 -43 -46 4000 -2.5 3.5 5000 -4.0 4.0
o
dB %
2600
mA dBc mA V C/W
VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 mA
2) S.C.L. = Single Carrier Level.
Note: 1) Tested with 100 Ohm gate resistor.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOL
VDS VGS IDS IGSF PIN PT TCH TSTG
Notes: 1. 2.
CHARACTERISTIC
Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power Dissipation Channel Temperature Storage Temperature
VALUE
10 V -4.5 V IDSS 80 mA @ 3dB compression 38 W 175C -65/+175C
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. Bias conditions must also satisfy the following equation PT < (TCH -TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) - (POUT - PIN).
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 1 Revised January 2006


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