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| COMMUNICATIONS COMPONENTS 850 nm 4.25 G VCSEL Die PL-VD0-00-SG0-C0 Key Features * Data rates from 622 Mbps to 4.25 Gbps * -20C to 85C operation * <2.2 V operation * Backside cathode and topside anode configuration * Custom specification tolerances available Benefits * Very high reliability - Low FIT - High MTBF * Excellent performance over extended operating temperatures The JDSU 850 nm 4.25 Gbps VCSEL (Vertical Cavity Surface Emitting Laser) is designed for high-speed optical data communication applications. The patented JDSU VCSEL is engineered for performance and reliability over extended operating temperatures and power supply conditions. Extensive production lot testing and rigorous lot qualification processes ensure specification compliance and high reliability. NORTH AMERICA: 800 498-JDSU (5378) WORLDWIDE: +800 5378-JDSU WEBSITE: www.jdsu.com 850 NM 4.25 G VCSEL DIE 2 Mounting Dimensions 1 2 Dimensions are in mm Note 1 Device Anode 2 Device Cathode Shipping Information Shipped in anti-static 2" x 2" gel pack containers. 1000 per gel pack. Absolute Maximum Ratings (Tcase = 30C, Continuous Wave (CW) operation unless otherwise stated.) Parameter Storage temperature Laser forward current Laser reverse voltage ESD1 Symbol Tst If BVRPD Ratings -40 to +125 12 -5 Class 1 Unit C mA V Note: Conditions exceeding those listed may cause permanent damage to the device. Devices subjected to conditions beyond the limits specified for extended periods of time may adversely affect reliability. 1. HBM 850 NM 4.25 G VCSEL DIE Electro-optical Characteristics (Tcase = 30C, CW operation unless otherwise stated.) Parameter Peak emission wavelength Operating temperature RMS spectral width p temperature coefficient Beam divergence Relative intensity noise Rise/Fall time1 Threshold current Ith temperature variation Laser forward voltage Series resistance Slope efficiency2 Slope efficiency temperature variation Symbol p Top p RIN12 tr tf Ith Ith Vf Rs /T Test Condition Min. 840 -30 Typ. 850 Max. 859 85 0.65 23 -122 80 80 1.20 0.6 2.1 70 0.35 Unit nm C nm nm/C deg dB/Hz psec mA mA V Ohms mW/mA PPM/C If = 6 mA 0.06 Pout = 1.4 mW Full width 1/e2 If = 8 mA 20% - 80% 20% - 80% T = -30C to 85C If = 4 mA If = 6 mA T = 25C to 85C T = -30C to 25C 0.50 0.4 55 0.25 -6000 -4000 1. Drive electronics and optical measurement hardware affect Rise/Fall Time measurement. Rise/Fall Time is specified using an AC coupled 50 voltage source and DC bias T. Pavg=400 W, Extinction Ratio=6 dB. 2. Tighter specification ranges are available upon request. Ordering Information For more information on this or other products and their availability, please contact your local JDSU account manager or JDSU directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide, or via e-mail at customer.service@jdsu.com. Sample: PL-VD0-00-SG0-C0 Part Number PL-VD0-00-SG0-C0 Description 850 nm 4.25 G VCSEL Die NORTH AMERICA: 800 498-JDSU (5378) WORLDWIDE: +800 5378-JDSU WEBSITE: www.jdsu.com Product specifications and descriptions in this document subject to change without notice. (c) 2008 JDS Uniphase Corporation 30149498 500 0808 PL-VD0-00-SG0-C0.DS.CC.AE August 2008 |
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