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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1210 DESCRIPTION *High DC Current Gain : hFE= 1000(Min.)@ IC= 10A *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) APPLICATIONS *Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w ww scs .i VALUE 150 V 100 V 8 V 10 A 20 A 1 A UNIT .cn mi e ICM Collector Current-Peak IB B Base Current- Continuous Collector Power Dissipation @Ta=25 3 W PC Collector Power Dissipation @TC=25 Tj Junction Temperature 80 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1210 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 10A, IB= 25mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A, IB= 25mA 2.0 V ICBO Collector Cutoff current VCB= 100V, IE= 0 10 A IEBO Emitter Cutoff Current VEB= 8V; IC= 0 5 mA hFE DC Current Gain IC= 10A; VCE= 2V 1000 Switching Times ton Turn-On Time tstg Storage Time tf Fall Time w w scs .i w IC = 10A,IB1 = -IB2= 25mA; RL= 5;VCC 50V .cn mi e 1.0 s 5.0 s 2.0 s isc Websitewww.iscsemi.cn |
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