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APTGF50DH120T3G
Asymmetrical - Bridge NPT IGBT Power Module
13 14
VCES = 1200V IC = 50A @ Tc = 80C
Application * AC and DC motor control * Switched Mode Power Supplies
Q1 CR1 18 CR3
22 19 23
7
8 Q4
CR2
CR4
4
3
29 15
30
31
32 16
R1
Features * Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design * Kelvin emitter for easy drive * Very low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * RoHS compliant
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C Max ratings 1200 70 50 150 20 312 100A @ 1200V Unit V A V W
April, 2009 1-7 APTGF50DH120T3G - Rev 0
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF50DH120T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V Tj = 25C VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 50A Tj = 125C VGE = VCE, IC = 1 mA VGE = 20 V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 600V IC = 50A Inductive Switching (25C) VGE = 15V VBus = 600V IC = 50A RG = 5 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 50A RG = 5 VGE = 15V Tj = 125C VBus = 600V IC = 50A Tj = 125C RG = 5 VGE 15V ; VBus = 900V tp 10s ; Tj = 125C Test Conditions VR=1200V IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V di/dt =200A/s Tj = 25C Tj = 125C Tc = 80C Min 1200 Min Typ Max 250 500 3.7 6.5 100 Typ 3450 330 220 330 35 200 35 65 320 30 35 65 360 40 6.9 mJ 3.05 300 A Max Unit A V V nA Unit pF
3.2 4.0 4.5
Dynamic Characteristics
Min
nC
ns
ns
Diode ratings and characteristics (CR2 & CR3)
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Typ Max 100 500 60 2.5 3 1.8 265 350 560 2890 3 V Unit V A A
April, 2009 2-7 APTGF50DH120T3G - Rev 0
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Reverse Recovery Time Reverse Recovery Charge
ns nC
CR1 & CR4 are IGBT protection diodes only
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APTGF50DH120T3G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.4 0.9 150 125 100 4.7 110 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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APTGF50DH120T3G - Rev 0
April, 2009
17
28
APTGF50DH120T3G
Typical IGBT Performance Curve
160 Ic, Collector Current (A) Output characteristics (VGE=15V)
250s Pulse Test < 0.5% Duty cycle TJ=25C TJ=125C
40
Ic, Collector Current (A)
Output Characteristics (VGE=10V)
250s Pulse Test < 0.5% Duty cycle TJ=25C
120
30
80
20
TJ=125C
40
10
0 0 2 4 6 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V) 8
0 0 1 2 3 VCE, Collector to Emitter Voltage (V)
Gate Charge 18 16 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 350 Gate Charge (nC) DC Collector Current vs Case Temperature
VCE=960V IC = 50A TJ = 25C VCE=600V VCE=240V
4
250
Ic, Collector Current (A)
200 150 100 50 0 0
250s Pulse Test < 0.5% Duty cycle
TJ=25C
TJ=125C TJ=25C
4 8 12 VGE, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
16
Collector to Emitter Breakdown Voltage (Normalized)
1.20 Ic, DC Collector Current (A) 25 50 75 100 125 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 TJ, Junction Temperature (C)
70 60 50 40 30 20 10 0
25
50 75 100 125 TC, Case Temperature (C)
150
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4-7
APTGF50DH120T3G - Rev 0
April, 2009
APTGF50DH120T3G
Turn-On Delay Time vs Collector Current
VCE = 600V RG = 5 VGE = 15V
Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns)
td(on), Turn-On Delay Time (ns)
45
400
VGE=15V, TJ=125C
40
350
35
300
VGE=15V, TJ=25C VCE = 600V RG = 5
30
250
25 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 180
VCE = 600V RG = 5
200 0 25 50 75 100 125
ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current 50
tr, Rise Time (ns)
tf, Fall Time (ns)
140
40
TJ = 125C
100
VGE=15V
30
TJ = 25C VCE = 600V, VGE = 15V, RG = 5
60
20 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125
20 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125
Eon, Turn-On Energy Loss (mJ)
24 20 16 12 8 4 0 0
VCE = 600V RG = 5
TJ=125C, VGE=15V
Eoff, Turn-off Energy Loss (mJ)
28
Turn-On Energy Loss vs Collector Current 8
Turn-Off Energy Loss vs Collector Current
VCE = 600V VGE = 15V RG = 5 TJ = 125C
6
4
TJ = 25C
TJ=25C, VGE=15V
2
0 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125
25 50 75 100 ICE, Collector to Emitter Current (A)
125
Switching Energy Losses (mJ)
Switching Energy Losses vs Gate Resistance 18 Switching Energy Losses (mJ) 16 14 12 10 8 6 4 2 0 0 10 20 30 40 Gate Resistance (Ohms) 50
Eoff, 25A Eon, 25A Eon, 50A Eoff, 50A VCE = 600V VGE = 15V TJ= 125C
8
Switching Energy Losses vs Junction Temp.
VCE = 600V VGE = 15V RG = 5 Eon, 50A
6
4
Eoff, 50A
Eoff, 25A
0 25 50 75 100 TJ, Junction Temperature (C) 125
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5-7
APTGF50DH120T3G - Rev 0
April, 2009
2
Eon, 25A
APTGF50DH120T3G
Capacitance vs Collector to Emitter Voltage 10000
Cies
Reverse Bias Safe Operating Area 120 IC, Collector Current (A) 100 80 60 40 20 0 0 400 800 1200 VCE, Collector to Emitter Voltage (V)
C, Capacitance (pF)
1000
Coes
100 0
Cres
10 20 30 40 VCE, Collector to Emitter Voltage (V)
50
0.45 Thermal Impedance (C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 0.05 0.7 0.5 0.9
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Single Pulse 0.0001 0.001 0.01 0.1 1 10
0 0.00001
Rectangular Pulse Duration (Seconds) Operating Frequency vs Collector Current 120 100 80 60 40 20 0 10 20 30 40 50 IC, Collector Current (A) 60
Hard switching ZCS ZVS VCE = 600V D = 50% RG = 5 TJ = 125C TC= 75C
Fmax, Operating Frequency (kHz)
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6-7
APTGF50DH120T3G - Rev 0
April, 2009
APTGF50DH120T3G
Typical diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
0 0.00001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 150 IF, Forward Current (A) 125 100 75 50 25 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF, Anode to Cathode Voltage (V) QRR, Reverse Recovery Charge (C) QRR vs. Current Rate Charge 6 5 4 3 2 1 0
30 A TJ=125C VR=800V
Trr vs. Current Rate of Charge
400 300 200
60 A TJ=125C VR=800V 120 A
TJ=125C
TJ=25C
100 0 0 200 400 600
30 A
800 1000 1200
-diF/dt (A/s) IRRM vs. Current Rate of Charge IRRM, Reverse Recovery Current (A)
7
50 40 30 20 10 0 0 200 400 600 800 1000 1200
-diF/dt (A/s)
TJ=125C VR=800V 120 A 60 A 30 A
120 A
60 A
0
200
400 600 800 -diF/dt (A/s)
1000 1200
400
Capacitance vs. Reverse Voltage
Max. Average Forward Current vs. Case Temp. 100 80 IF(AV) (A) 60 40 20 0
Duty Cycle = 0.5 TJ=175C
C, Capacitance (pF)
300
200
0 1 10 100 VR, Reverse Voltage (V) 1000
25
50
75
100
125
150
175
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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7-7
APTGF50DH120T3G - Rev 0
Case Temperature (C)
April, 2009
100

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