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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ410 DESCRIPTION *High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 200V(Min.) *Low Collector Saturation Voltage: VCE(sat)= 0.8V(Max)@ IC= 1A APPLICATIONS *Designed for medium to high voltage inverters, converters, regulators and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature Range VALUE 200 200 5 5 10 2 100 150 -65~200 UNIT V V V A A A W PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 0.75 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MJ410 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 1.2 V ICEO Collector Cutoff Current VCE= 200V; IB= 0 0.25 mA ICBO Collector Cutoff Current VCB= 200V;VEB(off)=1.5V;TC=125 0.5 mA IEBO Emitter Cutoff current VEB= 5V; IC= 0 5.0 mA hFE-1 DC Current Gain IC= 1A; VCE=5V 30 90 hFE-2 DC Current Gain IC= 2.5A; VCE=5V 10 fT Current-Gain--Bandwidth Product IC= 0.2A; VCE=10V; f=1.0MHz 2.5 MHz isc Websitewww.iscsemi.cn |
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