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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU546 DESCRIPTION With TO-3 package High voltage Fast switching speed APPLICATIONS For color TV horizontal deflection circuits. PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg Collector-base voltage PARAMETER CONDITIONS Open emitter Open base Collector-emitter voltage HAN INC Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature SEM GE TC=25ae Open collector OND IC TOR UC VALUE 1300 550 7 6 100 175 -65~175 ae ae UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. BU546 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0; 550 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0; 7 V VCEsat Collector-emitter saturation voltage IC=3.2A;IB=0.8A 2.0 V VBEsat Base-emitter saturation voltage IC=3.2A;IB=0.8A 1.3 V ICBO Collector cut-off current VCB=1300V;IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V;IC=0 0.1 mA hFE DC current gain IC=1.5A ; VCE=5V 8 HAN INC SEM GE OND IC TOR UC 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU546 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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