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S1PHB28
Single Phase Half Controlled Bridge With Free Wheeling Diode
Dimensions in mm (1mm=0.0394") Type VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800
2 1 6 4 3
S1PHB28-08 S1PHB28-12 S1PHB28-14 S1PHB28-16 S1PHB28-18
8
Symbol IdAV TK=85oC, module IdAVM module IFRMS, ITRMS per leg TVJ=45oC VR=0 ITSM, IFSM TVJ=TVJM VR=0
2
Test Conditions
Maximum Ratings 28 32 23
Unit A
t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine repetitive, IT=50A
300 330 270 300 440 455 365 370 150
A
It
TVJ=45oC VR=0 TVJ=TVJM VR=0
A2s
TVJ=125oC f=50Hz, tp=200us (di/dt)cr VD=2/3VDRM IG=0.3A diG/dt=0.3A/us (dv/dt)cr PGM PGAVM VRGM TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA
A/us non repetitive, IT=1/2IdAV 500 1000 10 5 0.5 10 -40...+125 125 -40...+125 t=1min t=1s 3000 3600 2-2.5 18-22 50 V/us W W V
o
TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) TVJ=TVJM IT=ITAVM tp=30us tp=500us
C
V~ Nm lb.in. g
Mounting torque (M5) (10-32 UNF)
S1PHB28
Single Phase Half Controlled Bridge With Free Wheeling Diode
Symbol IR, ID VT, VF VTO rT VGT IGT VGD IGD IL IH tgd tq Qr RthJC RthJK dS dA a TVJ=TVJM; TVJ=TVJM; tG=30us; IG=0.3A; diG/dt=0.3A/us VD=6V; VD=6V; TVJ=25 C TVJ=-40oC TVJ=25oC TVJ=-40oC TVJ=125oC VD=2/3VDRM VD=2/3VDRM TVJ=25 C TVJ=-40oC TVJ=125oC
o o
Test Conditions TVJ=TVJM; VR=VRRM; VD=VDRM TVJ=25oC IT, IF=45A; TVJ=25oC For power-loss calculations only (TVJ=125oC)
Characteristic Values 5 0.3 1.6 0.9 15 1.0 1.2 65 80 50 0.2 5 150 200 100 100 2 typ. 150 75 1.4 0.35 2.0 0.5 12.6 6.3 50
1000 s tgd 100 typ. Limit T V J = 25C
Unit mA V V m V
mA V mA mA mA us us uC K/W K/W mm mm m/s2
TVJ=25oC; VD=6V; RGK= TVJ=25 C; VD=1/2VDRM IG=0.3A; diG/dt=0.3A/us TVJ=125oC; IT=15A; tp=300us; VR=100V VD=2/3VDRM; dv/dt=20V/us; di/dt=-10A/us per thyristor(diode); DC current per module per thyristor(diode); DC current per module Creepage distance on surface Creepage distance in air Maximum allowable acceleration
10 V VG
1: IG T , T V J = 125C 2: IG T , T V J = 25C 3: IG T , T V J = -40C
o
1
1
2
3 6 4 5
10
0.1
IG D, T VJ = 125C
4: P G AV = 0.5 W 5: P G M = 1 W 6: P G M = 10 W
1
10
100
1000 IG
mA
1 10
100 IG
mA 1000
F ig. 1 G ate trigger range
F ig. 2 G ate controlled delay time tgd
S1PHB28
Single Phase Half Controlled Bridge With Free Wheeling Diode
F ig. 3 S urge overload current per chip I F S M: C res t value, t: duration
F ig. 4 I 2t vers us time (1-10 ms ) per chip
F ig. 5 Max. forward current at heats ink temperature
F ig. 6 P ower dis s ipation vers us direct output current and ambient temperature
C ons tants for Z thJ K calculation: i 1 2 3 R thi (K /W) 0.3441 1.1554 1.5005 ti (s ) 0.0344 0.12 0.5
F ig. 7 T rans ient thermal impedance junction to heats ink per chip

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