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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5248 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 160V(Min) *Good Linearity of hFE *Wide Area of Safe Operation *Complement to Type 2SA1964 APPLICATIONS *Power amplifier applications. *Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w ww scs .i VALUE 160 V 160 V 5 V 1.5 A 2 W UNIT .cn mi e IC Collector Current-Continuous Collector Power Dissipation @Ta=25 PC Collector Power Dissipation @TC=25 TJ Junction Temperature 20 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5248 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 B 160 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50A; IE= 0 160 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50A; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 1.0 V A ICBO Collector Cutoff Current VCB= 160V; IE= 0 1.0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain fT Current-Gain--Bandwidth Product COB Output Capacitance hFE Classifications D 60-120 E w w scs .i w IC= 0.1A; VCE= 5V IC= 0.2A; VCE= 10V IE= 0; VCB= 10V; f= 1MHz .cn mi e 60 1.0 A 200 150 MHz 20 pF 100-200 isc Websitewww.iscsemi.cn 2 |
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