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HMC-AUH249
v03.0209
GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz
Features
Small Signal Gain: 15 dB Output Voltage: up to 8V pk-pk Psat Output Power: +23 dBm High Speed Performance: >35 GHz 3 dB Bandwidth Supply Voltage: +5V @ 200 mA Small Die Size: 2.2 x 1.80 x 0.1 mm
Typical Applications
This HMC-AUH249 is ideal for: * Fiber Optic Modulator Driver * Gain Block for Test & Measurement Equipment * Point-to-Point/ Point-to-Multi-Point Radios
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MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
* Wideband Communication & Surveillance Systems * Radar Warning Systems * Military & Space
Functional Diagram
General Description
The HMC-AUH249 is a GaAs MMIC HEMT Distributed Driver Amplifier die which operates between DC and 35 GHz and provides a typical 3 dB bandwidth of 37 GHz. The amplifier provides 15 dB of gain and +23 dBm of saturated output power while requiring only 200 mA from a +5V supply. The HMC-AUH249 exhibits very good gain and phase ripple beyond 25 GHz and can output greater than 8V peak-topeak, making it ideal for use in broadband wireless, fiber optic communication and test equipment applications. The amplifier die occupies less than 4 mm2 which facilitates easy integration into MultiChip-Modules (MCMs). The HMC-AUH249 requires a bias-tee as well as off-chip blocking components and bypass capacitors for the DC supply lines. Vgg1 adjusts the bias current for the device while Vgg2 adjusts the output gain.
Electrical Specifi cations [1], TA = +25 C, Vdd = 5V, Vgg2 = 1.5V
Parameter Gain Bandwidth (3 dB) Gain Variation Group Delay Variation Power Output at 1 dB Compression Power Output at Saturation Maximum Output Amplitude Input Return Loss Output Return Loss Power Dissipation Supply Current (Idd) [1] Unless otherwise indicated, all measurements are from die in a test fixture. [2] Adjust Vgg1 between -1.0V to 0V to achieve Idd = 200 mA. DC - 20 GHz DC - 35 GHz DC - 20 GHz DC - 35 GHz DC - 35 GHz DC - 25 GHz DC - 5 GHz DC - 5 GHz Min. Typ. 15 >35 1 10 21 23 8 15 9 13 7 1 200 Max. Units dB GHz dB ps dBm dBm Vpp dB dB dB dB W mA
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC-AUH249
v03.0209
GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz
Gain vs. Frequency
18 14 10 GAIN (dB) 6 2 -2 -6 -10 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz)
Group Delay vs. Frequency
250
GROUP DELAY (psec)
230
210
190
4
10 15 20 25 30 35 40 FREQUENCY (GHz)
170
150
Input Return Loss vs. Frequency
0 -5 RETURN LOSS (dB)
Output Return Loss vs. Frequency
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -40
-10 -15 -20 -25 -30 -35 -40 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz)
0
5
10
15
20
25
30
35
40
45
50
FREQUENCY (GHz)
Fixtured Pout vs. Frequency
24 22 20 POUT (dBm) 18 16 14 12 10 0 5 10 15 20 25 30 35 40 FREQUENCY (GHz)
P1dB P3dB
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
HMC-AUH249
v03.0209
GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz
12.5 Gb/s Eye Diagram [1]
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
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MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) RF Input Power Channel Temperature Storage Temperature Operating Temperature +7 Vdc +10 dBm 180 C -65 to +150 C -55 to +110 C
Recommended Operating Conditions
Parameter Positive Supply Voltage (Vdd) Positive Supply Current Bias Current Adjust (Vgg1) Output Voltage Adjust (Vgg2) RF Input Power -1 0.3 Min. Typ. 5 200 -0.5 1.5 Max. 6 230 0 1.5 4 Units V mA V V dBm
[1] Input 12.5 Gb/s data stream, 01.0V, PRBS 231-1
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC-AUH249
v03.0209
GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz
Outline Drawing
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MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
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Die Packaging Information [1]
Standard GP-1 (Gel Pack) Alternate [2]
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004" SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE .002"
[1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC-AUH249
v03.0209
GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz
Pin Descriptions
Pin Number 1 Function RFIN Description DC coupled. Blocking Cap is needed. Interface Schematic
2
RES1
AC coupled 50 termination.
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MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
3
Vgg2
Gate control for amplifier. Please follow "MMIC Amplifier Biasing Procedure" application note. See assembly for required external components. RF output and DC bias (Vdd) for the output stage. Gate control for amplifier. Please follow "MMIC Amplifier Biasing Procedure" application note. See assembly for required external components.
4
RFOUT & Vdd
6
Vgg1
5
RES2
AC coupled 35 termination.
Die Bottom
GND
Die Bottom must be connected to RF/DC ground.
Application Circuit
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC-AUH249
v03.0209
GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz
Assembly Diagram
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MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
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Note 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC-AUH249
v03.0209
GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz
Device Mounting
* 1 mil diameter wire bonds are used on Vgg1 and Vgg2 connections to the capacitors and 27 resistors. * 0.5mil x 3mil ribbon bonds are used on RF connections * Capacitors and resistors on Vgg1 and Vgg2 are used to filter low frequency, <800MHz, RF pickup * 35 and 50 resistors are fabricated on a 5mil alumina substrate and should be suitable for use as a high frequency termination.
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MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
* For best gain flatness and group delay variation, eccosorb can be epoxied on the transmission line covering the center 3/4 of the transmission line length. Eccosorb may also be placed partially across the RES1 pad and 35 resistor for improved gain flatness and group delay variation. (The insertion of the transmission line helps reduce low frequency, <10GHz, gain ripple) * Silver-filled conductive epoxy is used for die attachment (Backside of the die should be grounded and the GND pads are connected to the backside metal through Vias)
Device Operation
These devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. The input to this device should be AC-coupled.
Device Power Up Instructions
1. Ground the device 2. Bring Vgg1 to -0.5V (no Vbias current) 3. Bring Vgg2 to +1.5V (no Vbias current) 4. Bring Vdd to +5V (150mA to 225mA drain current) (Initially the drain current (Vbias) will rise sharply with a small Vbias voltage, but will fl atten out as Vbias approaches 5V) * Vgg1 should be varied between -1.0V and 0V to achieve 200mA current on the drain (Vbias). * Vbias may be increased to +5.5V if required to achieve greater output voltage swing. * Vgg2 may be adjusted between +1.5V and +0.3V to vary the output voltage swing.
Device Power Down Instructions
1. Reverse the sequence identified above in steps 1 through 4.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC-AUH249
v03.0209
GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
0.102mm (0.004") Thick GaAs MMIC
Ribbon Bond 0.076mm (0.003")
RF Ground Plane
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MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
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0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Follow ESD precautions to protect against ESD
0.150mm (0.005") Thick Moly Tab 0.254mm (0.010" Thick Alumina Thin Film Substrate Figure 2.
0.102mm (0.004") Thick GaAs MMIC
Ribbon Bond 0.076mm (0.003")
RF Ground Plane
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
RF bonds made with 0.003" x 0.0005" ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001" (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

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