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HN4B101J
TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)
HN4B101J
MOS Gate Drive Applications Switching Applications
* * * * Small footprint due to a small and thin package
0.95 2.90.2
Unit: mm
+0.2 2.8 -0.3 +0.2 1.6 -0.1
Low collector-emitter saturation: PNP VCE (sat) = -0.20 V (max) : NPN High-speed switching : PNP VCE (sat) = 0.17 V (max) tf = 45 ns (typ.)
1.90.2
0.95
2 3
4
Absolute Maximum Ratings (Ta = 25C)
Rating Characteristic Symbol PNP Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (t = 10 s) Collector power dissipation (DC) Junction temperature Storage temperature range Single-device operation Single-device operation DC (Note 1) VCBO VCEO VEBO IC ICP IB PC (Note 2) -30 -30 -7 -1.0 -5.0 -120 0.85 NPN 50 30 7 1.2 5.0 120 V V V A mA W Unit
+0.2 1.1 -0.1
1. Base (PNP) 2. Emitter (PNP/NPN) 3. Base (NPN) 4. Collector (NPN) 5. Collector (PNP)
JEDEC JEITA TOSHIBA
Pulse (Note 1)
2-3L1A
Weight: 0.014g (typ.)
PC (Note 2) Tj Tstg
0.55 150 -55 to 150
W C C
Note 1: Ensure that the channel temperature does not exceed 150C during use of the device. Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
0~0.1

2006-11-13
+0.1 0.16 -0.06
: NPN tf = 50 ns (typ.)
0.40.1
High DC current gain : hFE = 200 to 500 (IC = -0.12 A)
1
5
HN4B101J
Figure 1. Circuit Configuration (top view) 5 4 Figure 2. Marking
PNP
NPN
Part No. (or abbreviation code)
5K
Min -30 200 125 Typ. 7.8 40 200 45 Max -100 -100 500 -0.20 -1.10 ns V V pF Unit nA nA V
1 2 3 Electrical Characteristics (Ta = 25C)
PNP
Characteristic Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = -30 V, IE = 0 VEB = -7 V, IC = 0 IC = -10 mA, IB = 0 VCE = -2 V, IC = -0.12 A VCE = -2 V, IC = -0.4 A IC = -0.4 A, IB = -13 mA IC = -0.4 A, IB = -13 mA VCB = -10 V, IE = 0, f = 1MHz See Figure 3 circuit diagram VCC -16 V, RL = 40 - -IB1 = IB2 = 13 mA
NPN
Characteristic Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = 50 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.12 A VCE = 2 V, IC = 0.4 A IC = 0.4 A, IB = 13 mA IC = 0.4 A, IB = 13 mA VCB = 10 V, IE = 0, f = 1MHz See Figure 4 circuit diagram VCC 16 V, RL = 40 - IB1 = -IB2 = 13 mA Min 30 200 125 Typ. 7.0 45 450 50 Max 100 100 500 0.17 1.10 ns V V pF Unit nA nA V
Figure 3. Switching Time Test Circuit & Timing Chart
Figure 4. Switching Time Test Circuit & Timing Chart
20s VCC RL IB2 Duty cycle 1% IB2 IB1 Output
20s IB1
Output
IB1
RL
I B2 IB1
Input
Input
I B2
Duty cycle 1%
VCC
2
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HN4B101J
PNP
IC - VCE
1.0 -20 -10 -8 -6 1000 -5 -4 0.8 Ta = 100C
hFE - IC
(A)
hFE
-IC
-3 0.6 -2
25C -55C 100
Collector current
0.4
IB = -1 mA
DC current gain
0.2
Common emitter Ta = 25C Single nonrepetitive pulse -1 -2 -3 -4 -5
Common emitter VCE = -2 V Single nonrepetitive pulse 10 0.001 0.01 0.1 1
0 0
Collector-emitter voltage
-VCE
(V)
Collector current
-IC
(A)
VCE (sat) - IC
1
VBE (sat) - IC
10 Common emitter = 30 Single nonrepetitive pulse
Collector-emitter saturation voltage -VCE (sat) (V)
Common emitter Single nonrepetitive pulse
0.1 Ta = 100C -55C 0.01 25C
Base-emitter saturation voltage -VBE (sat) (V)
= 30
1
Ta = -55C
100C 25C
0.001 0.001
0.01
0.1
1
0.1 0.001
0.01
0.1
1
Collector current
-IC
(A)
Collector current
-IC
(A)
Safe operating area
10 IC max (pulse) * IC max (pulse) * IC max (continuous)* DC operation Ta = 25C *: Single nonrepetitive pulse Ta = 25C Note that the curves for 100 ms, 10 s and DC operation will be 0.1 different when the devices aren't mounted on an FR4 board (glass-epoxy, 1.6 mm thick, Cu 2 area: 645 mm ). Single-device operation These characteristic curves must be derated linearly with increase in temperature. 0.01 0.1 1 100 s* 10 s*
IC - VBE
1.0 VCE = -2 V 0.8 Single nonrepetitive pulse
(A)
(A)
Common emitter
10 ms*
1 ms*
-IC
0.6
Collector current
Ta = 100C
-55C
0.4 25C 0.2
Collector current
-IC
1
100 ms* 10 s* 10
0 0
0.4
VCEO max 100
0.8
1.2
1.6
Base-emitter voltage
-VBE
(V)
Collector-emitter voltage
-VCE (V)
3
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HN4B101J
NPN
IC - VCE
1.2 10 8 6 5 1000 Ta = 100C
hFE - IC
(A)
1.0
hFE
4 0.8 3
IC
25C -55C 100
Collector current
0.6
2
0.4
IB = 1 mA Common emitter Ta = 25C Single nonrepetitive pulse 1 2 3 4 5
DC current gain
0.2
Common emitter VCE = 2 V Single nonrepetitive pulse 0.01 0.1 1 10
0 0
10 0.001
Collector-emitter voltage
VCE
(V)
Collector current
IC
(A)
VCE (sat) - IC
1 Common emitter Single nonrepetitive pulse 10 Common emitter = 30
VBE (sat) - IC
Collector-emitter saturation voltage VCE (sat) (V)
Base-emitter saturation voltage VBE (sat) (V)
= 30
Single nonrepetitive pulse
0.1 Ta = 100C -55C
1
Ta = -55C
100C 25C
25C
0.01 0.001
0.01
0.1
1
10
0.1 0.001
0.01
0.1
1
Collector current
IC
(A)
Collector current
IC
(A)
Safe operating area
10
IC - VBE
1.2 Common emitter
IC max (pulse) * IC max (pulse) * 10 ms*
100 s* 1 ms*
10 s*
(A)
(A)
1.0
VCE = 2 V Single nonrepetitive pulse
IC max (continuous)* 1 DC operation Ta = 25C *: Single nonrepetitive pulse Ta = 25C Note that the curves for 100 ms, 10 s and DC operation will be 0.1 different when the devices aren't mounted on an FR4 board (glass-epoxy, 1.6 mm thick, Cu area: 645 mm2). Single-device operation These characteristic curves must be derated linearly with increase in temperature. 0.01 0.1 1
IC
Collector current
0.6
Ta = 100C
-55C
0.4
25C
Collector current
0.8
IC
0.2
100 ms* 10 s* 10
0 0
0.4
0.8
VCEO max 100
1.2
1.6
Base-emitter voltage
VBE
(V)
Collector-emitter voltage
VCE (V)
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HN4B101J
Common
rth - tw
1000
Transient thermal resistance rth(j-a) (C/W)
100
10 Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse Ta = 25C Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) 1 0.001
0.01
0.1
1
10
100
1000
Pulse width
tw
(s)
Permissible Power Dissipation for Simultaneous Operation Permissible power dissipation for Q2 Pc (W)
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 DC operation Ta = 25C Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Permissible power dissipation for Q1 PC (W)
Collector power dissipation at single-device operation is 0.55 W. Collector power dissipation at single-device value at dual operation is 0.31 W. Collector power dissipation at dual operation is set to 0.62 W.
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2006-11-13
HN4B101J
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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2006-11-13

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