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Product Specification
PE4150
Product Description
The PE4150 is an ultra-high linearity Quad MOSFET mixer with an integrated LO amplifier. The LO amplifier allows for LO drive levels of less than 0dBm to produce IIP3 values similar to a Quad MOSFET Array driven with a 15dBm LO drive. The PE4150 operates with differential signals at the RF and IF ports and the integrated LO buffer amplifier drives the mixer core. It can be used as an upconverter or a downconverter. The PE4150 is manufactured on Peregrine's UltraCMOSTM process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS.
UltraCMOSTM Low Frequency Passive Mixer with Integrated LO Amplifier
Features
* Ultra-high linearity Quad MOSFET array
with integrated LO amplifier
* Ideal for mobile radio and Up/down
conversion applications
* Low conversion loss * High LO Isolation * Packaged in small 20-lead 4x4 mm QFN
Figure 1. Functional Diagram
VDD RF
LO
EN
GND
Gate Bias (optional)
IF
Figure 2. Package Type
4x4 mm 20-Lead QFN
Document No. 70-0242-04 www.psemi.com
(c)2007-2009 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 10
PE4150
Product Specification
Table 1. AC and DC Electrical Specifications (VDD = 2.9 to 3.1 V, Temperature = -40 to +85 C unless specified otherwise)
Parameters
Current Drain (a function of frequency) Off state leakage current RF Input Frequency VHF Band UHF1 Band UHF2 Band 700 MHz 800 MHz 900 MHz LO Frequency VHF Band UHF1 Band UHF2 Band 700 MHz 800 MHz 900 MHz IF Output Frequency LO Input Power RF Input Power Conversion Loss VHF, UHF1, UHF2 700, 800, and 900 MHz 3rd Order Input Intercept (IIP3) 2nd Order Input Intercept (IIP2) VHF, UHF1, UHF2 700, 800 and 900 MHz RF to IF Isolation1 VHF, UHF1, UHF2 700, 800 and 900 MHz LO to IF Isolation LO to RF Isolation 20 41 35 35 25 20 25 6.5 7.5 25 60 50 50 45 30 30
Min
Typ
8
Max
12 20
Units
mA uA
136 380 450 764 851 935
174 470 520 776 870 941
MHz MHz MHz MHz MHz MHz
245.65 270.35 340.35 873.65 741.35 825.35 44.85 -10
283.65 360.35 410.35 885.65 760.35 831.35 109.65 -6 2 8 8.7
MHz MHz MHz MHz MHz MHz MHz dBm dBm dB dB dBm dBm dBm dB dB dB dB
Note 1: The RF to IF Isolation is measured with an input frequency equal with IF.
(c)2007-2009 Peregrine Semiconductor Corp. All rights reserved. Page 2 of 10
Document No. 70-0242-04
UltraCMOSTM RFIC Solutions
PE4150
Product Specification
Figure 3. Pin Configuration (Top View)
GND N/C N/C VDD VDD
Table 4. Absolute Maximum Ratings
Symbol
VDD VDS
Parameters/Conditions
Supply Voltage Maximum DC plus peak AC across drain-source Maximum DC current across drain-source Maximum AC current across drain-source Storage temperature range Operating Junction Temperature ESD Voltage (HBM, MIL_STD 883 Method 3015.7)
Min
Max
4.0 3.3 6
Units
C V mA
20
19
18
17
GND INB INA N/C N/C
16
1 2 3 4 5 10
15 14 13 12 11
MixBias GND RF_M RF_P GND
IDS-DC
IDS-AC TST Tj
36 -65 150 125
mAp-p C C
6
7
8
9
Table 2. Pin Descriptions
Pin #
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 INB INA N/C N/C EN VDD IF_P GND IF_M GND RF_P RF_M GND MixBias N/C N/C VDD VDD GND
IF_P
GND
IF_M
EN
VDD
Symbol
GND Ground
Function
Negative LO Input Positive LO Input No Connect No Connect Enable Pin (active low) VDD Positive IF port Ground Negative IF port Ground Positive RF Input Negative LO Input Ground External Mixer Bias No Connect No Connect VDD VDD Ground
VESD
1000
V
Exceeding absolute maximum ratings may cause permanent damage. Operation should be restricted to the limits in the Operating Ranges table. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability.
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOSTM device, observe the same precautions that you would use with other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the specified rating.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOSTM devices are immune to latch-up.
The RF and IF pins are differential signals connected directly to the passive mixer. The LO input can be differential or single-ended.
Device Description
The PE4150 passive broadband Quad MOSFET array is designed for use in up-conversion and down-conversion applications for high performance systems such as mobile radios, cellular infrastructure equipment, and STB/CATV systems. The PE4150 is an ideal mixer core for a wide range of mixer products, including module level solutions that incorporate baluns or other single-ended matching structures enabling three-port operation. The performance level of this passive mixer is made possible by the very high linearity afforded by Peregrine's UltraCMOSTM process.
(c)2007-2009 Peregrine Semiconductor Corp. All rights reserved. Page 3 of 10
Table 3. Operating Ranges
Symbol Parameters/Conditions Min
VDD TOP VDD Power Supply Voltage Operating temperature range 2.9 -40
Typ
3.0
Max Units
3.1 85 V C
Moisture Sensitivity Level The Moisture Sensitivity Level rating for the PE4150 in the 20-lead 4x4 QFN package is MSL1.
Document No. 70-0242-04 www.psemi.com
PE4150
Product Specification
Evaluation Kit
The Mixer Evaluation Kit board was designed to ease customer evaluation of the PE4150 Quad MOSFET Mixer with intergrated LO amplifier. The RF and IF ports are connected through 50ohm transmission lines and 1:4 transmission line transformers to J5 and J7, respectively. The LO ports are connected through 50ohm transmission lines to J4 and J6, respectively, and can support either a single-ended or differential signal drive. With a single-ended input, no termination is needed on the un-used port. The board is constructed of a two metal layer FR4 with a total thickness of 0.062". The bottom layer provides ground for the RF transmission lines. The transmission lines were designed using a coplanar waveguide with ground plane model using a trace width of 0.037", trace gaps of 0.008", dielectric thickness of 0.059" and metal thickness of 0.0015". J3 provides an optional external DC bias that can be applied to the LO input, if there is DC component to the applied RF input. To use this option, transformers T2 and T3 must be carefully chosen to allow the use of a non-zero commonmode level. J9 can be used to enable or disable the part. The chip enable /EN is active low. De-coupling capacitors are provided on the VDD traces. These capacitors should be placed as close to the DVDD pin as possible. Figure 4. Evaluation Board Layout
Peregrine Specification 101/0201
Applications Support If you have a problem with your evaluation kit or if you have applications questions, please contact applications support: E-Mail: help@psemi.com (fastest response) Phone: (858) 731-9400
(c)2007-2009 Peregrine Semiconductor Corp. All rights reserved. Page 4 of 10
Document No. 70-0242-04
UltraCMOSTM RFIC Solutions
PE4150
Product Specification
Figure 5. Evaluation Board Schematic
Peregrine Specification 102/0396
R1 DNI J2 DNI Z=50 Ohm J1 DNI
J11 HEADER 2 1 2
VDD VDD
Place C1,C2,C4,C5 close to DVDD Pin.
OUTB (NOT USED - SEE NOTE 5)
Z=50 Ohm
VDD C1 10pF C2 0.01F
R2 DNI
OUTA (NOT USED - SEE NOTE 5)
Z=50 Ohm J3 DNI
C3 10F
C4 10pF
C5 0.01F
MIXBIAS
R3 0 OHM
(OPTIONAL)
20
19
18
17
C6
51pF
N/C
GND
VDD_1
0 OHM R6 DNI R7 51 Ohm 2 INB INA N/C 1 GND
VDD_2
N/C
INB
16
J4 DNI
Z=50 Ohm
R4
R5 DNI 15 14 13 2 12 3 11 R13 DNI R16 DNI R17 0 OHM R10 DNI R11 DNI 4 R8 DNI 1 T3 ETK4-2T 6 R9 DNI Z=50 Ohm J5 SMASM
MIXBIAS GND
LO
J6 SMASM Z=50 Ohm R12 0 OHM R14 DNI R15 51 Ohm
3 4 C7 51pF 5
U1 MLPQ4X4
RF_N RF_P
GND
6
7
8
9
VDD J10 DNI 1 2 3 J8 DNI 1 2 3 J9 CON3 1 2 3 VDD VDD LG1 R22 0 OHM T2 ETK4-2T VDD LG2 R20 DNI R21 DNI R18 DNI R19 DNI
3
2
4
Mounting Holes on PCB
1 1 1 1 MTG1 MTG2 MTG3 MTG4
R24 DNI
J7 SMASM
Document No. 70-0242-04 www.psemi.com
Z=50 Ohm
IF
6
LG0
1
10
R25 DNI
IF_N
IF_P
EN
INA
VDD_2
N/C
GND
RF
R23 DNI
(c)2007-2009 Peregrine Semiconductor Corp. All rights reserved. Page 5 of 10
PE4150
Product Specification
Typical Performance Plots Figure 6. Conversion Loss vs Temperature (VDD = 3V; LO Pwr = -10 dBm) Figure 7. Conversion Loss vs LO Power & VDD (Temp = 25 deg C)
LO_Pw r LO_Pw r LO_Pw r LO_Pw r LO_Pw r LO_Pw r = -11dBm; VDD=3V = -10dBm; VDD=3V = -6dBm;VDD=3V = -5dBm; VDD=3V = -10dBm; VDD = 2.91V = -10dBm; VDD = 3.09
-40 deg C 9 8 7 6 Loss [dB]
+25 deg C
+85 deg C
9 8 7 6 Loss [dB] 5 4 3 2 1 0
5 4 3 2 1 0 0 200 400 600 800 1000 Frequency [MHz]
0
200
400
600
800
1000
Frequency [MHz]
Figure 8. Linearity vs Temperature (VDD = 3V; LO Pwr = -10 dBm)
IIP2 @ -40 deg C IIP2 @ +85 deg C IIP3 @ +25 deg C IIP2 @ +25 deg C IIP3 @ -40 deg C IIP3 @ +85 deg C
Figure 9. Linearity vs LO Power (VDD = 3V; Temp = +25 deg C)
IIP2 w / LO_Pw r IIP2 w / LO_Pw r IIP3 w / LO_Pw r IIP3 w / LO_Pw r = -11dBm = -6dBm = -11dBm = -6dBm IIP2 w / LO_Pw r IIP2 w / LO_Pw r IIP3 w / LO_Pw r IIP3 w / LO_Pw r = -10dBm = -5dBm = -10dBm = -5dBm
80 70 60 Loss [dB] IIP2/IIP3 [dBm]
80 70 60 Loss [dB] IIP2/IIP3 [dBm] 50 40 30 20 10 0
50 40 30 20 10 0 0 200 400 600 800 1000 Frequency [MHz] (c)2007-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 6 of 10
0
200
400
600
800
1000
Frequency [MHz] Document No. 70-0242-04 UltraCMOSTM RFIC Solutions
PE4150
Product Specification
Typical Performance Plots Figure 10. Linearity vs VDD (Temp = +25 deg C; LO Pwr = -10 dBm)
IIP2 w / VDD = 2.91V IIP2 w / VDD = 3.09V IIP3 w / VDD = 3.0V IIP2 w / VDD = 3.0V IIP3 w / VDD = 2.91V IIP3 w / VDD = 3.09
Figure 11. Isolation vs Temperature (VDD = 3V; LO Pwr = -10 dBm)
LO-IF Iso @ -40 degC LO-IF Iso @ +85 deg C RF-IF Iso @ +25 deg C LO-IF Iso @ +25 deg C RF-IF Iso @ -40 deg C RF-IF Iso @ +85 deg C
80 70 60 Loss [dBm] IIP2/IIP3 [dB]
70 60 50 Loss [dB] Isolation[dB] 40 30 20 10 0
0 200 400 600 800 1000
50 40 30 20 10 0 Frequency [MHz]
0
200
400
600
800
1000
Frequency [MHz]
Figure 12. Isolation vs LO Power (VDD = 3V; Temp = +25 deg C)
LO-IF Iso w / LO_Pw r = -11dBm LO-IF Iso w / LO_Pw r = -10dBm LO-IF Iso w / LO_Pw r = -6dBm LO-IF Iso w / LO_Pw r = -5dBm RF-IF Iso w / LO_Pw r = -11dBm RF-IF Iso w / LO_Pw r = -10dBm RF-IF Iso w / LO_Pw r = -6dBm RF-IF Iso w / LO_Pw r = -5dBm
Figure 13. Isolation vs VDD (Temp = +25 deg C; LO Pwr = -10 dBm)
70 60 50 Loss [dB] Isolation [dB]
70 60 50 Loss [dB] Isolation [dB] 40 30 20 10 0
LO-IF Iso w / VDD=2.91V LO-IF Iso w / VDD=3.0V LO-IF Iso w / VDD=3.09V RF-IF Iso w / VDD=2.91V RF-IF Iso w / VDD=3.0V RF-IF Iso w / VDD=3.09V
40 30 20 10 0 0 200 400 600 800 1000 Frequency [MHz]
Document No. 70-0242-04 www.psemi.com
0
200
400
600
800
1000
Frequency [MHz]
(c)2007-2009 Peregrine Semiconductor Corp. All rights reserved. Page 7 of 10
PE4150
Product Specification
Figure 14. Package Drawing
4x4 mm 20-lead QFN
(c)2007-2009 Peregrine Semiconductor Corp. All rights reserved. Page 8 of 10
Document No. 70-0242-04
UltraCMOSTM RFIC Solutions
PE4150
Product Specification
Figure 15. Tape and Reel Drawing
Tape Feed Direction
Pin 1
A0 = 4.35 B0 = 4.35 K0 = 1.1
Device Orientation in Tape
Top of Device
Figure 16. Marking Specification
4150 YYWW ZZZZZ
YYWW = Date Code (Year, Work Week) ZZZZZ = Last five digits of PSC Lot Number
Table 5. Ordering Information Order Code Part Marking
EK-4150-01 PE4150 MLI PE4150 MLI-Z PE4150 -EK 4150 4150
Description
PE4150 - 20QFN 4x4mm-EK PE4150 G - 20QFN 4x4mm-75A PE4150 G -20QFN 4x4mm-3000C
Package
Evaluation Kit Green 20-lead 4x4mm QFN Green 20-lead 4x4mm QFN
Shipping Method
1 / Box 75 units / Tube 3000 units / T&R
Document No. 70-0242-04 www.psemi.com
(c)2007-2009 Peregrine Semiconductor Corp. All rights reserved. Page 9 of 10
PE4150
Product Specification
Sales Offices
The Americas Peregrine Semiconductor Corporation
9380 Carroll Park Drive San Diego, CA 92121 Tel: 858-731-9400 Fax: 858-731-9499
Peregrine Semiconductor, Asia Pacific (APAC)
Shanghai, 200040, P.R. China Tel: +86-21-5836-8276 Fax: +86-21-5836-7652
Peregrine Semiconductor, Korea
#B-2607, Kolon Tripolis, 210 Geumgok-dong, Bundang-gu, Seongnam-si Gyeonggi-do, 463-943 South Korea Tel: +82-31-728-3939 Fax: +82-31-728-3940
Europe Peregrine Semiconductor Europe
Batiment Maine 13-15 rue des Quatre Vents F-92380 Garches, France Tel: +33-1-4741-9173 Fax : +33-1-4741-9173
Peregrine Semiconductor K.K., Japan
Teikoku Hotel Tower 10B-6 1-1-1 Uchisaiwai-cho, Chiyoda-ku Tokyo 100-0011 Japan Tel: +81-3-3502-5211 Fax: +81-3-3502-5213
High-Reliability and Defense Products
Americas San Diego, CA, USA Phone: 858-731-9475 Fax: 848-731-9499 Europe/Asia-Pacific Aix-En-Provence Cedex 3, France Phone: +33-4-4239-3361 Fax: +33-4-4239-7227
For a list of representatives in your area, please refer to our Web site at: www.psemi.com
Data Sheet Identification
Advance Information
The product is in a formative or design stage. The data sheet contains design target specifications for product development. Specifications and features may change in any manner without notice. The information in this data sheet is believed to be reliable. However, Peregrine assumes no liability for the use of this information. Use shall be entirely at the user's own risk. No patent rights or licenses to any circuits described in this data sheet are implied or granted to any third party. Peregrine's products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to support or sustain life, or in any application in which the failure of the Peregrine product could create a situation in which personal injury or death might occur. Peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in such applications. The Peregrine name, logo, and UTSi are registered trademarks and UltraCMOS, HaRP, MultiSwitch and DuNE are trademarks of Peregrine Semiconductor Corp.
Document No. 70-0242-04 UltraCMOSTM RFIC Solutions
Preliminary Specification
The data sheet contains preliminary data. Additional data may be added at a later date. Peregrine reserves the right to change specifications at any time without notice in order to supply the best possible product.
Product Specification
The data sheet contains final data. In the event Peregrine decides to change the specifications, Peregrine will notify customers of the intended changes by issuing a CNF (Customer Notification Form).
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