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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3416 DESCRIPTION *High Collector-Emitter Breakdown VoltageV(BR)CEO= 200V (Min) *Complement to Type 2SA1352 APPLICATIONS *Designed for color TV chroma output, high-voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 200 200 5.0 0.1 0.2 1.2 5 V V .cn mi e V A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25 A PC Total Power Dissipation @ TC=25 TJ Junction Temperature W 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3416 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10A; IE= 0 200 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10A; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA; IB= 2mA 0.6 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain fT Current-Gain--Bandwidth Product COB Output Capacitance w E w. w F 160-320 .cn mi cse is VCB= 150V; IE= 0 VEB= 4V; IC= 0 IC= 10mA ; VCE= 40V 40 IC= 10mA ; VCE= 30V 70 IE= 0; VCB= 30V; f= 1.0MHz 1.7 IC= 20mA; IB= 2mA 1.0 V 0.1 A 0.1 A 320 MHz pF hFE Classifications C 40-80 D 60-120 100-200 isc Websitewww.iscsemi.cn 2 |
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