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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT211X DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min.) *High Speed Switching APPLICATIONS *Designed for high frequency electronic lighting ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 850 UNIT V Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-peak w w scs .i w 400 9 V V 5 A 10 2 4 32 150 -65~150 A A A .cn mi e IBM PC Tj Tstg Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 3.95 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BUT211X TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0; L= 25mH 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.4A B 2.0 V VBE(sat) ICES IEBO Base-Emitter Saturation Voltage IC= 3A; IB= 0.4A B 1.3 1.0 2.0 10 V Collector Cutoff Current VCE= 850V; VBE= 0 VCE= 850V; VBE= 0; Tj= 125 VEB= 9V; IC= 0 mA Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 1A; VCE= 2V hFE-2 DC Current Gain Switching Times; Resistive Load ts tf Storage Time Fall Time hFE-1 Classifications 1 13-20 2 18-25 w w 3 23-30 scs .i w IC= 3A; VCE= 2V .cn mi e 13 7.5 30 2.0 s s IC= 3A; IB1= 0.3A; IB2= -0.6A 0.8 isc Websitewww.iscsemi.cn |
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