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| EIA1415-5 UPDATED 11/17/2006 14.40-15.35GHz 5-Watt Internally Matched Power FET FEATURES * * * * * * * .060 MIN. Excelics EIA1415-5 YYWW SN .094 .382 .060 MIN. 14.40- 15.35GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 33% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .650.008 .512 GATE .319 DRAIN .022 .045 .004 .070 .008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f =14.40-5.35GHz VDS = 8 V, IDSQ 1400mA Gain at 1dB Compression f =14.40-15.35GHz VDS = 8 V, IDSQ 1400mA Gain Flatness f =14.40-15.35GHz VDS = 8 V, IDSQ 1400mA Power Added Efficiency at 1dB Compression f =14.40-15.35GHz VDS = 8 V, IDSQ 1400mA Drain Current at 1dB Compression f =14.40-15.35GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 2 1 Caution! ESD sensitive device. MIN 35.5 6.0 TYP 36.5 7.0 0.6 33 1700 2880 -1.0 5.5 2000 3600 -2.5 6.0 o MAX UNITS dBm dB dB % mA mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 29 mA Note: 1) Tested with 100 Ohm gate resistor. 2) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 VDS VGS Igf Igr Pin Tch Tstg Pt Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation 10 -5 43.2mA -7.2mA 35.5dBm 175 oC -65 to +175 oC 25W 8V -3V 14.4mA -2.4mA @ 3dB Compression 175 oC -65 to +175 oC 25W Note: 1) Exceeding any of the above ratings may result in permanent damage. 2) Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2006 EIA1415-5 UPDATED 11/17/2006 14.40-15.35GHz 5-Watt Internally Matched Power FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2006 |
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