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| MJP122 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER Features: * High DC current gain * Electrically similar to popular TIP122 * Built-in a damper diode at E-C TO-251 ABSOLUTE MAXIMUM RATINGS (TA=25C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range @TC=25C @TA=25C Symbol VCBO VCEO VEBO IC PD Tj Tstg Value 100 100 5.0 5.0 20.0 1.5 +150 -55 to +150 Unit V V V A W C C WEITRON http://www.weitron.com.tw 1/4 13-Apr-07 MJP122 ELECTRICAL CHARACTERISTICS(TA=25C unless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=1mA Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO Min 100 100 5.0 Typ Max 10 10 2 Unit V V V A A mA Collector-Emitter Breakdown Voltage IC=30mA Emitter-Base Breakdown Voltage IE=3mA Collector Cutoff Current VCB=100V Collector Emitter Cutoff Current VCE =50V Emitter Cutoff Current VEB =5.0V ON CHARACTERISTICS DC Current Gain VCE=4V, IC=4A VCE=4V, IC=8A Collector-Emitter Saturation Voltage IC =4A, IB =16mA IC =8A, IB =80mA Base-Emitter Saturation Voltage IC =8A, IB =80mA Base-Emitter On Voltage VCE =4A, IC=4A Output Capacitance VCB=10V, IE=0, f=0.1MHz hFE(1) hFE(2) VCE(sat) VBE(sat) V(on) Cob 1000 100 - 200 12000 2.0 4.0 4.5 2.8 - V V V pF WEITRON http://www.weitron.com.tw 2/4 13-Apr-07 MJP122 Typical Characteristics WEITRON http://www.weitron.com.tw 3/4 13-Apr-07 MJP122 TO-251 Outline Dimensions unit:mm E A 4 G H B J 1 2 3 N D M K C L Dim A B C D E G H J K L M N TO-251 M in 6 .4 0 6 .8 0 0 .5 0 2 .2 0 0 .4 5 1 .0 0 5 .4 0 0 .4 5 0 .9 0 6 .5 0 - M ax 6 .8 0 7 .2 0 0 .8 0 2 .3 0 2 .5 0 0 .5 5 1 .6 0 5 .8 0 0 .6 9 1 .5 0 0 .9 0 1 . Em it t er 2 . Base 3 . Collect or WEITRON http://www.weitron.com.tw 4/4 13-Apr-07 |
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