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| SI7686DP New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A)a 35 35 rDS(on) (W) 0.0095 @ VGS = 10 V 0.014 @ VGS = 4.5 V Qg (Typ) 9.2 9 2 nC D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07mm Profile D Optimized for High-Side Synchronous Rectifier Operation D 100% Rg Tested RoHS COMPLIANT PowerPAK SO-8 APPLICATIONS D DC/DC Converters D 6.15 mm S 1 2 3 S S 5.15 mm G 4 G D 8 7 6 5 D D D S N-Channel MOSFET Bottom View Ordering Information: SI7686DP-T1--E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25_C Continuous Drain Current (TJ = 150_C) TC = 70_C TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source-Drain Diode Current Source Drain TC = 25_C TA = 25_C TC = 25_C Maximum Power Dissipation TC = 70_C TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 30 "20 35a 35a 17.9b, c 14.3b, c 50 31.5 4.2b, c 37.9 24.2 5b, c 3.2b, c -55 to 150 260 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t p 10 sec Steady State Symbol RthJA RthJC Typical 21 2.8 Maximum 25 3.3 Unit _C/W Notes: a. Package Limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 sec d. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 70 _C/W. Document Number: 73451 S-51334--Rev. A, 25-Jul-05 www.vishay.com 1 SI7686DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea VDS DVDS/TJ DVGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 13.8 A VGS = 4.5 V, ID = 11.4 A VDS = 15 V, ID = 13.8 A 50 0.0078 0.011 56 0.0095 0.014 1 30 31.3 -6 3 "100 1 10 mV/_C V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 15 V, RL = 1.5 W ID ^ 10 A, VGEN = 10 V, Rg = 1 W VDD = 15 V, RL = 1.5 W ID ^ 10 A, VGEN = 4.5 V, Rg = 1 W f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 13.8 A VDS = 15 V, VGS = 0 V, f = 1 MHz 1220 230 98 17 9.2 VDS = 15 V, VGS = 5 V, ID= 13.8 A 4.1 2.8 0.8 20 20 20 8 13 16 23 8 1.2 30 30 30 15 20 25 35 15 ns W 26 14 nC pF Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 2.6 A, di/dt = 100 A/ms, TJ = 25_C 26A A/ms IS = 2.6 A 0.8 25 15 12.5 12.5 ns TC = 25_C 31.5 A 50 1.2 50 30 V ns nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73451 S-51334--Rev. A, 25-Jul-05 2 SI7686DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 10 Vishay Siliconix Transfer Characteristics I D - Drain Current (A) 30 I D - Drain Current (A) 40 VGS = 10 thru 4 V 8 6 20 4 TC = 125_C 10 3V 0 0.0 0.4 0.8 1.2 1.6 2.0 2 25_C -55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 0.0140 1500 Capacitance rDS(on) - On-Resistance (mW) Ciss 0.0120 C - Capacitance (pF) VGS = 4.5 V 0.0100 VGS = 10 V 0.0080 1200 900 600 Coss 0.0060 300 Crss 0.0040 0 10 20 30 40 50 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) ID = 13.8 A 8 rDS(on) - On-Resiistance (Normalized) VDS = 15 V 6 VDS = 21 V 4 1.8 On-Resistance vs. Junction Temperature ID = 13.8 A VGS = 10 V 1.6 1.4 1.2 VGS = 4.5 V 1.0 2 0.8 0 0 4 8 12 16 20 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) Document Number: 73451 S-51334--Rev. A, 25-Jul-05 TJ - Junction Temperature (_C) www.vishay.com 3 SI7686DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 50 rDS(on) - Drain-to-Source On-Resistance (W) 0.030 ID = 13.8 A 0.025 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 0.020 0.015 TJ = 25_C 0.010 TJ = 125_C TJ = 25_C 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.005 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Threshold Voltage 2.6 2.4 40 2.2 Power (W) VGS(th) (V) 2.0 1.8 1.6 1.4 10 1.2 1.0 -50 0 0.01 ID = 250 mA 30 50 Single Pulse Power, Junction-to-Ambient 20 -25 0 25 50 75 100 125 150 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area, Junction-to-Ambient 100 *Limited by rDS(on) 10 1 ms I D - Drain Current (A) 1 10 ms 100 ms 1s 0.1 10 s dc 0.01 TA = 25_C Single Pulse 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com 4 Document Number: 73451 S-51334--Rev. A, 25-Jul-05 SI7686DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Current De-Rating* 60 40 35 30 ID - Drain Current (A) 40 Power 25 20 15 10 10 5 0 0 25 50 75 100 125 150 25 50 75 100 125 150 Vishay Siliconix Power De-Rating 50 30 Package Limited 20 0 TC - Case Temperature (_C) TC - Case Temperature (_C) *The power dissipation PD is based on TJ(max) = 150_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73451 S-51334--Rev. A, 25-Jul-05 www.vishay.com 5 SI7686DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73451. www.vishay.com Document Number: 73451 S-51334--Rev. A, 25-Jul-05 6 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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