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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2518 DESCRIPTION *High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) *Low Collector Saturation Voltage *High Speed Switching APPLICATIONS *Designed for switching regulator, DC-DC converter and ultrasonic applicance applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w ww scs .i VALUE 500 400 8 5 10 2.5 UNIT .cn mi e V V V A A ICM Collector Current-Peak IB B Base Current-Continuous Total Power Dissipation @ TC=25 Junction Temperature A PC 40 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCEX(SUS)-1 VCEX(SUS)-2 VCE(sat) VBE(sat) ICBO ICER ICEX IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 2A; IB= 0.4A, L=1mH B 2SC2518 MIN 400 450 400 MAX UNIT V V V IC= 2A ; IB1=-IB2= 0.4A, L=180H,clamped IC= 4A; IB1= 0.8A; IB2= -0.4A, L= 180H,clamped IC= 2A; IB= 0.4A B 1.0 1.5 10 1.0 10 1.0 10 20 10 80 V V A mA A mA A IC= 2A; IB= 0.4A B VCB= 400V; IE= 0 VCE= 400V; RBE= 51, Ta=125 Switching times ton tstg tf w ww scs .i VEB= 5V; IC=0 VCE= 400V; VBE(off)= -1.5V VCE= 400V; VBE(off)= -1.5V, Ta=125 IC= 0.5A; VCE= 5V IC= 2A; VCE= 5V .cn mi e Turn-on Time Storage Time Fall Time IC= 2A ,RL= 75, IB1= -IB2= 0.4A,VCC 150V 1.0 2.5 0.7 s s s hFE-2 Classifications M 20-40 L 30-60 K 40-80 isc Websitewww.iscsemi.cn 2 |
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