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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4230 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V(Min) *Fast Switching speed APPLICATIONS *Electronic ballasts for fluorescent lighting *Switch mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 1200 800 7 UNIT V V Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Total Power Dissipation @ TC=25 Junction Temperature w ww scs .i V 2 A 4 A 1 2 50 150 A A W .cn mi e IBM PT TJ Tstg Storage Temperature Range -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.5 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 0.1A; IB= 0 IC= 1A; IB= 0.2A B 2SC4230 MIN 800 TYP. MAX UNIT V 1.0 1.5 100 100 100 V V A A A IC= 1A; IB= 0.2A B At rated Voltage At rated Voltage At rated Voltage IC= 1A ; VCE= 5V Current-Gain--Bandwidth Product Switching times ton tstg tf Turn-on Time Storage Time Fall Time w w scs .i w IC= 1mA ; VCE= 5V IC= 0.2A ; VCE= 10V .cn mi e 8 7 8 MHz 0.5 3.5 0.3 s s s IC= 1A , IB1= 0.2A; IB2= -0.4A RL= 250; VBB2= 4V isc Websitewww.iscsemi.cn 2 |
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