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APT40GL120JU3 ISOTOP(R) Buck chopper Trench + Field Stop IGBT4 Power module C VCES = 1200V IC = 40A @ Tc = 80C Application * AC and DC motor control * Switched Mode Power Supplies Features * Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * ISOTOP(R) Package (SOT-227) * Very low stray inductance * High level of integration Benefits * Low conduction losses * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant G E A E G C A ISOTOP(R) Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 150C Max ratings 1200 65 40 70 20 220 70A @ 1100V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APT40GL120JU3 - Rev 0 July, 2009 APT40GL120JU3 All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 35A Tj = 150C VGE = VCE , IC = 1.2mA VGE = 20V, VCE = 0V Min Typ 1.85 2.25 5.8 Max 250 2.25 6.5 400 Unit A V V nA 5.0 Dynamic Characteristics Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= 15V ; VCE=600V IC=35A Inductive Switching (25C) VGE = 15V VCE = 600V IC = 35A RG = 12 Inductive Switching (150C) VGE = 15V VCE = 600V IC = 35A RG = 12 TJ = 25C VGE = 15V VCE = 600V TJ = 150C IC = 35A TJ = 25C RG = 12 TJ = 150C VGE 15V ; VBus = 900V tp 10s ; Tj = 150C Min Typ 1950 155 115 0.27 130 20 300 45 150 35 350 80 2.6 4 2 3 140 ns Max Unit pF C ns mJ mJ A Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 150C Tc = 80C IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V Min 1200 Typ Max 100 500 Unit V A A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VR=1200V di/dt =200A/s Tj = 125C Tj = 25C Tj = 125C 380 360 1700 ns nC www.microsemi.com 2-5 APT40GL120JU3 - Rev 0 July, 2009 Tj = 125C Tj = 25C 30 2.6 3.2 1.8 300 3.1 V APT40GL120JU3 Thermal and package characteristics Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min IGBT Diode 2500 -55 Typ Max 0.68 1.2 20 175 300 1.5 Unit C/W V C N.m g Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 29.2 SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 1.95 (.077) 2.14 (.084) Anode Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. Emitter Gate Dimensions in Millimeters and (Inches) ISOTOP(R) is a registered trademark of ST Microelectronics NV www.microsemi.com 3-5 APT40GL120JU3 - Rev 0 July, 2009 APT40GL120JU3 Typical Performance Curve 70 60 50 IC (A) 40 30 20 10 0 0 1 2 VCE (V) 3 4 TJ=25C TJ=150C Output Characteristics (VGE=15V) Output Characteristics 70 60 50 IC (A) 40 30 20 10 0 0 1 2 VCE (V) 3 4 VGE=9V TJ = 150C VGE=19V VGE=15V 70 60 50 IC (A) 40 30 20 10 0 5 6 Transfert Characteristics TJ=25C 12 10 8 E (mJ) 6 4 Energy losses vs Collector Current VCE = 600V VGE = 15V RG =12 TJ = 150C Eon Eoff TJ=150C 2 0 7 8 9 VGE (V) 10 11 12 13 0 10 20 30 40 50 60 70 IC (A) Reverse Bias Safe Operating Area 80 70 Eon Switching Energy Losses vs Gate Resistance 10 8 E (mJ) 6 4 2 0 0 10 20 30 40 Gate Resistance (ohms) 50 VCE = 600V VGE =15V IC = 35A TJ = 150C 60 IC (A) 50 40 30 20 10 0 0 300 600 900 VCE (V) 1200 1500 VGE=15V TJ=150C RG=12 Eoff maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.1 0.05 Single Pulse 0.9 IGBT 0.7 0.5 0.3 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APT40GL120JU3 - Rev 0 July, 2009 APT40GL120JU3 Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 160 ZVS VCE=600V D=50% RG=12 TJ=150C Tc=75C Forward Characteristic of diode 80 70 60 IF (A) 50 40 30 TJ=25C TJ=125C 120 80 40 Hard switching ZCS 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0 10 20 30 40 IC (A) 50 60 70 VF (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.4 0.2 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse Diode 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APT40GL120JU3 - Rev 0 July, 2009 |
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