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| SSG6679 -14A, -30V,RDS(ON) 9m[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SSG6679 provide the designer with the best Combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. 0.35 0.49 SOP-8 0.40 0.90 6.20 5.80 0.25 0.19 0.25 45 o 0.375 REF 3.80 4.00 1.27 Typ. 4.80 5.00 0.10 0.25 Features * Lower On-Resistance * Simple Drive Requirement * Fast Switching Characteristics D 8 D 7 D 6 D 5 0 o 8 o 1.35 1.75 Dimensions in millimeters D Date Code 6679SC G 1 S 2 S 3 S 4 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID@TA=25 oC ID@TA=70 C IDM PD@TA=25 C o o Ratings -30 25 -14 -8.9 -50 2.5 0.02 Unit V V A A A W W / oC o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Ratings 50 Unit o C/W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SSG6679 -14A, -30V,RDS(ON) 9m[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj= 70 C ) Static Drain-Source On-Resistance 2 o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. - 30 _ Typ. _ - 0.03 _ _ _ _ _ _ Max. _ _ Unit V V/ C V nA uA uA m[ o Test Condition VGS=0V, ID=-250uA Reference to 25 C, ID=-1mA VDS=VGS, ID=-250uA VGS=25V VDS=-30V,VGS=0 VDS=-24V,VGS=0 VGS=-10V, ID=-14A VGS=-4.5V, ID=-11A ID=-14A VDS=-24V VGS=-4.5V o -1.0 _ _ _ _ -3.0 100 -1 -25 9 13 60 _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 37 3 25 13 11 58 43 2860 950 640 26 nC _ _ _ _ VDD=-15V ID=-1A nS VGS=-10 V RG=3.3[ RD=15 [ 4580 _ _ pF VGS=0V VDS=-25V f=1.0MHz _ _ S VDS=-10V, ID=-14A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time 2 Symbol VSD Trr Min. _ _ Typ. _ Max. -1.2 _ _ Unit V nS nC Test Condition IS=-2.0 A, VGS=0V. IS=-14 A, VGS=0V. dl/dt=100A/us 48 46 Reverse Recovery Change Qrr _ Notes: 1. Pulse width limited by Max. junction temperature. 300us, dutycycleO2%. 2.Pulse widthO 2 o 3.Surface mounted on 1 in copper pad of FR4 board;125 C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SSG6679 -14A, -30V,RDS(ON) 9m[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SSG6679 -14A, -30V,RDS(ON) 9m[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 12 /W Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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