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| WTC4501 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 3.2 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE 2 SOURCE Features: * Leading Planar Technology for Low Gate Charge / Fast Switching. * 2.5V Rated for Low Voltage Gate Drive. * SOT-23 Surface Mount for Small Footprint. 3 1 2 Applications: * Load/Power Switch for Portables. * Load/Power Switch for Computing. * DC-DC Conversion. SOT-23 Maximum Ratings (TA=25C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Body Diode) Total Power Dissipation (TA =25C ) Maximum Junction-Ambient 1,2 Lead Temperature for Soldering Purposes (1/8" from case for 10 s) Operating Junction Temperature Range Storage Temperature Range TA=25C TA=85C tp=10 S Symbol V DS VG S ID IDM IS PD R JA TL TJ Tstg Value 20 12 3.2 2.4 10 1.6 1.25 100 300 260 -55~+150 -55~+150 Unit V V A A A W C/W C C C 1. Surface-mounted on FR4 board using 1 in sq pad size(Cu area = 1.127 in sq [1 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size. Device Marking WTC4501 = N45 WEITRON http://www.weitron.com.tw 1/4 06-Nov-09 WTC4501 Electrical Characteristics (TJ = 25C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V VDS = 16 V Gate-to-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage (Note 3) Negative Threshold Temperature Coefficient Drain-to-Source On Resistance RDS(on) Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Gate Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SOURCE-DRAIN DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD tRR ta tb QRR VGS = 0 V, dIS/dt = 100 A/ms, A/ms IS = 1.6 A VGS = 0 V, ISD = 1.6 A 0.8 7.1 5 1.9 3.0 nC ns 1.2 V td(on) tr td(off) tf VGS = 4.5 V, VDS = 10 V, ID = 3.6 A, RG = 6.0 W 6.5 12 12 3 ns Ciss Coss Crss QG(TOT) QGS QGD VGS = 4.5 V, VDS = 10 V, ID = 3.6 A VGS = 0 V, f = 1.0 MHz, VDS = 10 V 200 80 50 2.4 0.5 0.6 6.0 nC pF gFS VGS(TH) VGS(TH)/TJ VGS = 4.5 V, ID = 3.6 A VGS = 2.5 V, ID = 3.1 A VDS = 5.0 V, ID = 3.6 A VGS = VDS, ID = 250 mA 0.65 -2.3 70 85 9 80 105 mW S 1.2 V mV/C IGSS TJ = 25C TJ = 85C VGS = 0 V, ID = 250 mA 20 24.5 22 1.5 10 100 V mV/C mA mA nA Symbol Test Condition Min Typ Max Units VDS = 0 V, VGS = 12 V 3. Pulse Test: Pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http:www.weitron.com.tw WEITRON 2/4 06-Nov-09 WTC4501 TYPICAL ELECTRICAL CHARACTERISTICS WEITRON http://www.weitron.com.tw 3/4 06-Nov-09 WTC4501 SOT-23 Outline Dimension SOT-23 A TOP VIEW D E G H B C K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 4/4 06-Nov-09 |
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