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 MITSUBISHI IGBT MODULES
CM200DU-12NFH
HIGH POWER SWITCHING USE
CM200DU-12NFH
IC ................................................................... 200A VCES ............................................................ 600V Insulated Type 2-elements in a pack
APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
TC measured point 94 7 17 80 0.25 23 23 2-6.5 MOUNTING HOLES 4
E2 G2
24
C2E1
E2
C1
18
G1E1
4 11
48
12 3-M5NUTS 12mm deep 16 2.5 25 2.5 16
13.5
E2 G2
TAB
7.5
4
#110. t=0.5 C2E1 E2
13
CM
C1
G1 E1
30 -0.5
+1
LABEL
21.2
CIRCUIT DIAGRAM
Feb. 2009
MITSUBISHI IGBT MODULES
CM200DU-12NFH
HIGH POWER SWITCHING USE
MAXIMUM RATINGS
Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC' (Note 3) Tj Tstg Viso -- -- --
(Tj = 25C, unless otherwise specified)
Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight G-E Short C-E Short Operation Pulse Operation Pulse TC = 25C TC' = 25C*4
Conditions
(Note 2) (Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value
Ratings 600 20 200 400 200 400 590 830 -40 ~ +150 -40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310
Unit V V A A A A W W C C Vrms N*m N*m g
ELECTRICAL CHARACTERISTICS
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current
(Tj = 25C, unless otherwise specified)
Test conditions VCE = VCES, VGE = 0V IC = 20mA, VCE = 10V VGE = VGES, VCE = 0V IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 200A, VGE = 15V VCC = 300V, IC = 200A VGE = 15V RG = 6.3, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1/2 module) Case temperature measured point is just under the chips (1/2 module) Tj = 25C Tj = 125C
Min. -- 5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 3.1
Limits Typ. -- 6 -- 2.0 1.95 -- -- -- 1240 -- -- -- -- -- 3.5 -- -- -- 0.07 -- --
Max. 1 7 0.5 2.7 -- 55 3.6 2.0 -- 250 150 500 150 150 -- 2.6 0.21 0.35 -- 0.15*3 31
Unit mA V A V nF nF nF nC ns ns ns ns ns C V K/W K/W K/W K/W
Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance
*1 : Case temperature (TC) measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : Case temperature (TC') measured point is just under the chips.
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. No short circuit capability is designed.
Feb. 2009 2
MITSUBISHI IGBT MODULES
CM200DU-12NFH
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
3
400
COLLECTOR CURRENT IC (A)
350 300 250
13 15 VGE = 20V
11
10 Tj = 25C 9.5 9 8.5 8
VGE = 15V
2.5 2 1.5 1 0.5
200 150 100 50 0 7 7.5
Tj = 25C Tj = 125C 0 50 100 150 200 250 300 350 400 COLLECTOR CURRENT IC (A)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
0
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103
7
5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 6 8 10 12 14
Tj = 25C
EMITTER CURRENT IE (A)
5 3 2
IC = 400A IC = 200A IC = 80A
102
7 5 3 2
Tj = 25C Tj = 125C 0 0.5 1 1.5 2 2.5 3
16
18
20
101
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 102
CAPACITANCE Cies, Coes, Cres (nF)
7 5 3 2
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Cies
SWITCHING TIME (ns)
7 5 3 2
td(off) td(on) tf tr Conditions: VCC = 300V VGE = 15V RG = 6.3 Tj = 125C Inductive load
2 3 5 7 102 2 3 5 7 103
101
7 5 3 2
102
7 5 3 2
100
7 5 3 2
Coes Cres
VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V)
101 1 10
COLLECTOR CURRENT IC (A)
Feb. 2009 3
MITSUBISHI IGBT MODULES
CM200DU-12NFH
HIGH POWER SWITCHING USE
REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A)
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c)
7 5 3 2
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part ) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100
7 5 3 2
Single Pulse TC = 25C 10-1
7 5 3 2
10-1
7 5 3 2
102
7 5 3 2
trr Irr
101 1 10
2
3
5
7 102
Conditions: VCC = 300V VGE = 15V RG = 6.3 Tj = 25C Inductive load 23 5 7 103
10-2
7 5 3 Per unit base = 2
10-2
7 5 3 2
Rth(j-c) = 0.21K/W
10-3
10-3 10-5 2 3 5 710-4 2 3 5 7 10-3
EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse TC = 25C 10-1
7 5 3 2
TIME (s)
GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 200A 16
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c)
7 5 3 2
VCC = 200V VCC = 300V
10-1
7 5 3 2
12
8
10-2
7 5 3 Per unit base = 2
10-2
7 5 3 2
4
Rth(j-c) = 0.35K/W
10-3
10-3 10-5 2 3 5 710-4 2 3 5 7 10-3
0
0
200
400
TIME (s)
800 1200 1600 600 1000 1400 1800 GATE CHARGE QG (nC)
Feb. 2009 4


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