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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
MMBT3906 PNP switching transistor
Product data sheet Supersedes data of 2000 Apr 11 2003 Mar 18
NXP Semiconductors
Product data sheet
PNP switching transistor
FEATURES * Collector current capability IC = -200 mA * Collector-emitter voltage VCEO = -40 V. APPLICATIONS * General switching and amplification. DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complement: MMBT3904. MARKING TYPE NUMBER MMBT3906 Note 1. = p: Made in Hong Kong. = t: Made in Malaysia. = W: Made in China.
Top view
MMBT3906
QUICK REFERENCE DATA SYMBOL VCEO IC PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) MAX. -40 -200 UNIT V mA
MARKING CODE(1) 7B
handbook, halfpage
3 3 1 2 1 2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN. MAX. -40 -40 -6 -200 -200 -100 250 +150 150 +150 V V V mA mA mA mW C C C UNIT
2003 Mar 18
2
NXP Semiconductors
Product data sheet
PNP switching transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = -30 V IC = 0; VEB = -6 V VCE = -1 V; see Fig.2 IC = -0.1 mA IC = -1 mA IC = -10 mA IC = -50 mA IC = -100 mA VCEsat VBEsat Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise figure IC = -10 mA; IB = -1 mA IC = -50 mA; IB = -5 mA IC = -10 mA; IB = -1 mA IC = -50 mA; IB = -5 mA IE = ie = 0; VCB = -5 V; f = 1 MHz IC = ic = 0; VEB = -500 mV; f = 1 MHz IC = -10 mA; VCE = -20 V; f = 100 MHz IC = -100 A; VCE = -5 V; RS = 1 k; f = 10 Hz to 15.7 kHz ICon = -10 mA; IBon = -1 mA; IBoff = 1 mA 60 80 100 60 30 - - - - - - 250 - - - - - MIN. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500
MMBT3906
UNIT K/W
MAX. -50 -50
UNIT nA nA
300 - - -250 -400 -850 -950 4.5 10 - 4 mV mV mV mV pF pF MHz dB
Switching times (between 10% and 90% levels); see Fig.7 td tr ts tf delay time rise time storage time fall time - - - - 35 35 225 75 ns ns ns ns
2003 Mar 18
3
NXP Semiconductors
Product data sheet
PNP switching transistor
MMBT3906
handbook, halfpage
600
MHC459
handbook, halfpage (3) (2) (1)
hFE
(1)
-250 IC (mA) -200
MHC460
(4)
400
-150
(5) (6) (7)
(2)
-100
(8)
200
(3) (9)
-50
(10)
0 -10-1
-1
-10
-102 -103 IC (mA)
(1) (2) (3) (4)
0
0
-2
-4
-6
-8
-10 VCE (V)
Tamb = 25 C. VCE = -1 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. IB = -1.5 mA. IB = -1.35 mA. IB = -1.2 mA. IB = -1.05 mA. (5) IB = -0.9 mA. (6) IB = -0.75 mA. (7) IB = -0.6 mA. (8) IB = -0.45 mA. (9) IB = -0.3 mA. (10) IB = -0.15 mA.
Fig.3 Fig.2 DC current gain; typical values.
Collector current as a function of collector-emitter voltage.
handbook, halfpage
-1200 VBE (mV) -1000
MHC461
handbook, halfpage
-1200 VBEsat (mV) -1000
MHC462
(1) (1)
-800
(2)
-800
(2)
-600
(3)
-600
(3)
-400
-400
-200 -10-1
-1
-10
-102
-103 IC (mA)
-200 -10-1
-1
-10
-102
-103 IC (mA)
VCE = -1 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.4
Base-emitter voltage as a function of collector current.
Fig.5
Base-emitter saturation voltage as a function of collector current.
2003 Mar 18
4
NXP Semiconductors
Product data sheet
PNP switching transistor
MMBT3906
-103 handbook, halfpage VCEsat (mV)
MHC463
(1)
-102
(2) (3)
-10 -10-1
-1
-10
-102
IC (mA)
-103
IC/IB = 10. (1) Tamb = 25 C. (2) Tamb = 150 C. (3) Tamb = -55 C.
Fig.6
Collector-emitter saturation voltage as a function of collector current.
handbook, full pagewidth
VBB
VCC
RB (probe) oscilloscope 450 Vi R1 R2
RC Vo (probe) 450 DUT oscilloscope
MGD624
Vi = 5 V; T = 500 s; tp = 10 s; tr = tf 3 ns. R1 = 56 ; R2 = 2.5 k; RB = 3.9 k; RC = 270 . VBB = 1.9 V; VCC = -3 V. Oscilloscope: input impedance Zi = 50 .
Fig.7 Test circuit for switching times.
2003 Mar 18
5
NXP Semiconductors
Product data sheet
PNP switching transistor
PACKAGE OUTLINE
MMBT3906
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC TO-236AB EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
2003 Mar 18
6
NXP Semiconductors
Product data sheet
PNP switching transistor
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION
MMBT3906
This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
2003 Mar 18
7
NXP Semiconductors
Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers.
Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
(c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/02/pp8 Date of release: 2003 Mar 18 Document order number: 9397 750 10243

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