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| SMG3407 -4.1A, -30V,RDS(ON) 52m[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A Description The SMG 3407 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. S 2 L SC-59 Dim Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 3 Top View B 1 A B C D G D G C J K Features * Lower Gate Charge * Small Package Outline * RoHS Compliant Gate Source H J K H Drain L S D All Dimension in mm G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 1 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Symbol Rthj-a Ratings -30 20 -4.1 -3.5 -20 1.38 0.01 -55 ~ +150 Ratings 90 Unit V V A A A W W/ : : Unit : /W Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SMG3407 -4.1A, -30V,RDS(ON) 52m[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=55 : ) Symbol BVDSS VGS(th) gfs IGSS IDSS Min. -30 -1.0 - Typ. 8.2 7 3.1 3 8.6 5 28.2 13.5 700 120 75 10 Max. -3.0 100 -1 -5 52 87 840 - Unit V V S nA uA uA m Test Conditions VGS=0, ID=-250uA VDS=VGS, ID=-250uA VDS=-5V, ID=-4A VGS= 20V VDS=-30V, VGS=0 VDS=-24V, VGS=0 VGS=-10V, ID=-4.1A VGS=-4.5V, ID=-3.0A ID=-4A VDS=-15V VGS=-4.5V VDS=-15V VGS=-10V RG=3 RL=3.6 VGS=0V VDS=-15V f=1.0MHz f=1.0MHz Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg Symbol VSD nC ns pF Source-Drain Diode Parameter Forward On Voltage 2 2 Min. - Typ. 27 15 - Max. -1.0 -2.2 Unit V ns nC A Test Conditions IS=-1.0A, VGS=0V IS=-4A, VGS=0V dI/dt=100A/ s VD=VG=0V, VS=-1.0V Reverse Recovery Time Trr Qrr IS Reverse Recovery Charge Continuous Source Current (Body Diode) Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in copper pad of FR4 board; 270 : /W when mounted on Min. copper pad. 2 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SMG3407 -4.1A, -30V,RDS(ON) 52m[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage 10 1 0.1 0.01 0.001 0.0001 0.00001 0.000001 Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SMG3407 -4.1A, -30V,RDS(ON) 52m[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET Fig 7. Maximum Safe Operating Area Fig 8. Single Pulse Power Rating Junction-to-Ambient v.s. Junction Temperature Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Normalized Maximum Transient Thermal Impedance http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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