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| SMD Type Hight Speed Power Switching 2SJ527S TO-252 IC MOSFET Features Low on-resistance RDS(on) = 0.3 typ. +0.2 9.70-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 High speed switching 4V gate drive devices. +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 1 Gate 2 Drain 3 Source 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 s, duty cycle 1% Symbol VDSS VGSS ID ID PD Tch Tstg Rating -60 20 -5 -20 20 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Gate to source breakdown voltage Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS VGSS IDSS IGSS Testconditons ID=-10mA,VGS=0 IG= 100 A ,VDS=0 Min -60 20 -10 10 -1.0 1.8 3 0.3 0.5 220 VDS=-10V,VGS=0,f=1MHZ 110 35 10 VGS(on)=-10V,ID=--3A ,RL=10 30 45 35 0.4 0.8 pF pF pF ns ns ns ns -2.0 Typ Max Unit V V A A V S VDS=-60V,VGS=0 VGS= 16V,VDS=0 VGS(off) VDS=-10V,ID=-1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=-10V,ID=-3A VGS=-10V,ID=-3A VGS=-4.0V,ID=-3A 3.80 Low drive current +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 www.kexin.com.cn 1 |
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