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| SVD8N60T/SVD8N60F 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES 8A,600V,RDS(on) typ =0.96@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability ORDERING SPECIFICATIONS Part No. SVD8N60T SVD8N60F Package TO-220-3L TO-220F-3L Marking SVD8N60T SVD8N60F Shipping 50Unit/Tube 50Unit/Tube ABSOLUTE MAXIMUM RATINGS (Tc=25C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy (Note 1) Repetitive Avalanche Energy Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS EAR TJ Tstg -55 -55 147 1.18 530 14.2 +150 +150 SVD8N60T 600 30 8.0 28 48 0.38 SVD8N60F Unit V V A A W W/C mJ mJ C C HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2009.07.09 Page 1 of 7 SVD8N60T/SVD8N60F THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol R JC R JA SVD8N60T 0.85 62.5 SVD8N60F 2.6 62.5 Unit C/W C/W ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted) Parameter Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd (Note 2,3) VDS=480V,ID=7.0A, VGS=10V (Note 2,3) Test conditions VGS=0V, ID=250A VDS=600V, VGS=0V VGS=30V, VDS=0V VGS= VDS, ID=250A VGS=10V, ID=3.5A VDS=25V,VGS=0V, f=1.0MHZ VDD=300V,ID=7.0A, RG=25 Min. 600 --2.0 -----------Typ. ----0.96 1095 93 2 39 29 248 36 26.8 5.1 8.5 ----ns -----nC pF Max. -10 100 4.0 1.2 Unit V A nA V SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Notes: 1. L=19.5mH,IAS=7.0A,VDD=50V,RG=25,starting TJ=25C; Symbol IS ISM VSD Trr Qrr Test conditions Integral Junction MOSFET IS=8.0A,VGS=0V IS=8.0A,VGS=0V, dIF/dt=100A/S Reverse Diode in P-N the Min. -----Typ. ---365 3.4 Max. 8.0 28 1.4 --A V ns C Unit 2. Pulse Test: Pulse width 300 s,Duty cycle 2%; 3. Essentially independent of operating temperature. HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2009.07.09 Page 2 of 7 SVD8N60T/SVD8N60F NOMENCLATURE TYPICAL CHARACTERISTICS HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2009.07.09 Page 3 of 7 SVD8N60T/SVD8N60F TYPICAL CHARACTERISTICS (continued) HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2009.07.09 Page 4 of 7 SVD8N60T/SVD8N60F TYPICAL TEST CIRCUIT Gate Charge Test Circuit & Waveform Same Type as DUT 50 12V 200nF 300nF VGS VDS 10V Qg Qgs Qgd VGS DUT Charge 3mA Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD VDS 90% 10V DUT VGS 10% td(on) tr ton td(off) tf toff Unclamped Inductive Switching Test Circuit & Waveform L EAS = VDS ID RG 10V tp DUT BVDSS 1 2 2 LIAS BVDSS - VDD BVDSS IAS VDD ID(t) VDD tp VDS(t) Time HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2009.07.09 Page 5 of 7 SVD8N60T/SVD8N60F PACKAGE OUTLINE TO-220-3L(One) UNIT: mm TO-220-3L(Two) UNIT: mm 15.1~15.9 HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn 13.10.5 3.95MAX 6.10~6.80 REV:1.0 2009.07.09 Page 6 of 7 SVD8N60T/SVD8N60F PACKAGE OUTLINE (continued) TO-220F-3L(One) UNIT: mm 12.40.4 TO-220F-3L(Two) 12.6~13.8 L 6.700.20 A UNIT: mm HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2009.07.09 Page 7 of 7 |
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