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| Datasheet File OCR Text: |
| BAT378W SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE 3 1 2 Marking Code: B7 Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage Reverse Voltage Maximum Peak Forward Current Surge Forward Current (10 ms) Average Forward Current Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range Symbol VRM VR IFM IFSM IO Ptot Tj Ts Topr Value 15 10 200 1 100 100 125 -55 to +125 -40 to +100 Unit V V mA A mA mW O C C C O O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 5 mA at IF = 100 mA Reverse Current at VR = 10 V Total Capacitance at VR = 0 V, f = 1 MHz Symbol VF IR CT Min. Typ. 20 Max. 0.3 0.5 20 40 Unit V A pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 27/02/2006 BAT378W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 27/02/2006 |
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