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| EPA960CR-CP083 UPDATED 01/16/2006 High Efficiency Heterojunction Power FET 960CR EPA FEATURES * * * * * * NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +38 dBm OUTPUT POWER AT 1dB COMPRESSION 16.5 dB GAIN AT 2 GHz 0.4x9600 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY All Dimensions in mil Tolerance: 3 mil ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB PAE IDSS GM VP BVGD BVGS RTH* PARAMETER/TEST CONDITIONS Output Power at 1dB Compression f= Vds = 8 V, Ids=50% Idss f= Gain at 1dB Compression f= Vds = 8 V, Ids=50% Idss f= Power Added Efficiency at 1dB Compression Vds = 8 V, Ids=50% Idss f= Saturated Drain Current Transconductance Pinch-off Voltage Drain Breakdown Voltage Source Breakdown Voltage Thermal Resistance 2.0 GHz 4.0 GHz 2.0 GHz 4.0 GHz 2.0 GHz Caution! ESD sensitive device. MIN 36.5 15.0 TYP 38.0 38.0 16.5 11.5 45 1760 1920 2880 3120 -1.0 -11 -7 -15 -14 6* o MAX UNITS dBm dB % VDS = 3 V, VGS = 0 V VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 28 mA IGD = 9.6 mA IGS = 9.6 mA 3760 mA mS -2.5 V V V C/W Notes: * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V 86.4 mA 14.4 mA 36 dBm 175oC -65/175oC 25 W CONTINUOUS2 8V -3V 28.8 mA 4.8 mA @ 3dB Compression 175oC -65/175oC 25 W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised January 2006 EPA960CR-CP083 UPDATED 01/16/2006 High Efficiency Heterojunction Power FET S-PARAMETERS 8V, 1/2 Idss --- S21 ----- S12 --MAG ANG 8.140 4.058 3.512 2.695 2.253 2.032 1.891 1.814 1.753 1.673 1.585 1.501 1.461 1.475 1.490 1.415 1.253 1.087 0.928 0.852 88.4 73.8 66.1 57.2 49.3 40.2 30.6 19.2 5.8 -8.2 -22.2 -35.7 -46.5 -61.0 -78.4 -98.4 -116.7 -133.1 -145.9 -153.8 MAG 0.008 0.011 0.016 0.021 0.025 0.030 0.037 0.045 0.052 0.060 0.068 0.076 0.084 0.098 0.112 0.119 0.120 0.114 0.108 0.111 ANG 24.0 32.3 38.4 38.2 38.3 36.2 32.0 23.2 14.6 5.2 -5.6 -16.6 -23.6 -34.6 -49.5 -66.6 -82.4 -98.7 -110.8 -118.9 FREQ (GHz) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 --- S11 --MAG 0.969 0.978 0.935 0.929 0.922 0.918 0.908 0.891 0.879 0.868 0.859 0.850 0.843 0.825 0.815 0.821 0.850 0.877 0.892 0.902 ANG -167.6 178.4 167.8 161.0 155.5 149.8 142.2 132.4 119.7 105.9 91.7 78.2 64.9 51.6 33.9 12.7 -6.9 -22.5 -33.5 -43.6 --- S22 --MAG 0.814 0.784 0.741 0.741 0.727 0.705 0.685 0.659 0.634 0.623 0.617 0.608 0.565 0.553 0.540 0.521 0.546 0.593 0.609 0.665 ANG 178.7 175.2 169.4 165.6 163.4 159.7 154.5 147.7 139.9 130.9 121.2 112.0 109.2 98.3 81.4 61.3 39.2 20.5 8.8 4.5 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised January 2006 |
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