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MITSUBISHI
PM25RL1C120
FLAT-BASE TYPE INSULATED PACKAGE
PM25RL1C120
FEATURE
Inverter + Brake + Drive & Protection IC a) Adopting new 5th generation Full-Gate CSTBTTM chip b) The over-temperature protection which detects the chip surface temperature of CSTBTTM is adopted. c) Error output signal is possible from all each protection upper and lower arm of IPM. d) Compatible L-series package. * 3 25A, 1200V Current-sense and temperature sense IGBT type inverter * Monolithic gate drive & protection logic * Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-FO available from upper arm devices) * UL Recognized
APPLICATION General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
90 80
0.5
Dimensions in mm
14.6 222 222222 6.7 0.3
5
10
222
10
222
10
10
1
5
9
13
2-4.3
50
25
23
20.5
B
P
N
U
V
W
2 10 12 12 12 12 12
0.5
19-
14.2
Terminal code : Control terminal 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UFO UP VUP1 VVPC VFO VP VVP1 VWPC WFO 11. 12. 13. 14. 15. 16. 17. 18. 19. WP VWP1 VNC VN1 Br UN VN WN Fo
LABEL
13
16.5
25
May 2009 1
MITSUBISHI
PM25RL1C120
FLAT-BASE TYPE INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
Br Fo
1.5k
VNC WN
VN1
VN
UN
WP VWP1 VWPC WFO
VP VVPC
VVP1 VFO
UP VUPC
VUP1 UFO
1.5k
1.5k
1.5k
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
B
N
W
V
U
P
MAXIMUM RATINGS (Tj = 25C, unless otherwise noted) INVERTER PART
Symbol VCES IC ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25C TC = 25C TC = 25C (Note-1) (Note-1) Ratings 1200 25 50 178 -20 ~ +150 Unit V A A W C
*: TC measurement point is just under the chip.
BRAKE PART
Symbol VCES IC ICP PC IF VR(DC) Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation FWDi Forward Current FWDi Rated DC Reverse Voltage Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25C TC = 25C TC = 25C TC = 25C TC = 25C (Note-1) (Note-1) Ratings 1200 25 50 178 25 1200 -20 ~ +150 Unit V A A W A V C
CONTROL PART
Symbol VD VCIN VFO IFO Parameter Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Condition Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN * Br-VNC Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC FO-VNC Sink current at UFO, VFO, WFO, FO terminals Ratings 20 20 20 20 Unit V V V mA
May 2009 2
MITSUBISHI
PM25RL1C120
FLAT-BASE TYPE INSULATED PACKAGE
TOTAL SYSTEM
Parameter Supply Voltage Protected by VCC(PROT) SC VCC(surge) Supply Voltage (Surge) Storage Temperature Tstg Isolation Voltage Viso Symbol Condition VD = 13.5 ~ 16.5V Inverter Part, Tj = +125C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1 min. Ratings 800 1000 -40 ~ +125 2500 Unit V V C Vrms
THERMAL RESISTANCES
Symbol Rth(j-c)Q Rth(j-c)F Rth(j-c)Q Rth(j-c)F Rth(c-f) Parameter Junction to case Thermal Resistances Contact Thermal Resistance Condition Inverter IGBT part (per 1 element) Inverter FWDi part (per 1 element) Brake IGBT part Brake FWDi upper part Case to fin, (per 1 module) Thermal grease applied (Note-1) (Note-1) (Note-1) (Note-1) (Note-1) Min. -- -- -- -- -- Limits Typ. -- -- -- -- -- Max. 0.70 1.18 0.70 1.18 0.085 Unit
C/W
* If you use this value, Rth(f-a) should be measured just under the chips.
(Note-1) TC (under the chip) measurement point is below. arm axis X Y UP IGBT FWDi 49.0 49.0 -4.4 2.4 VP IGBT FWDi 35.0 35.0 2.4 -4.4 WP IGBT FWDi 21.0 21.0 2.4 -4.4 UN IGBT FWDi 42.0 42.0 -6.9 -0.05 VN IGBT FWDi 28.0 28.0 -6.9 -0.05 WN IGBT FWDi 14.0 14.0 -4.9 2.0
(unit : mm) BR IGBT Di 64.0 67.8 4.3 -4.6
(0,0)
Bottom view
LABEL SIDE ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise noted) INVERTER PART
Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Condition VD = 15V, IC = 25A VCIN = 0V, Pulsed (Fig. 1) -IC = 25A, VD = 15V, VCIN = 15V VD = 15V, VCIN = 0V15V VCC = 600V, IC = 25A Tj = 125C Inductive Load VCE = VCES, VD = 15V (Fig. 5) Tj = 25C Tj = 125C (Fig. 2) Min. -- -- -- 0.3 -- -- -- -- -- -- Limits Typ. 1.65 1.85 2.3 0.8 0.3 0.4 1.5 0.4 -- -- Max. 2.15 2.35 3.3 2.0 0.8 1.0 2.8 1.2 1 10 Unit V V
Switching Time
s
(Fig. 3,4) Tj = 25C Tj = 125C
Collector-Emitter Cutoff Current
mA
May 2009 3
MITSUBISHI
PM25RL1C120
FLAT-BASE TYPE INSULATED PACKAGE
BRAKE PART
Symbol VCE(sat) VFM ICES Parameter Collector-Emitter Saturation Voltage Forward Voltage Collector-Emitter Cutoff Current VD = 15V, IC = 25A VCIN = 0V, Pulsed IF = 25A VCE = VCES, VD = 15V Condition Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min. -- -- -- -- -- Limits Typ. 1.65 1.85 2.3 -- -- Max. 2.15 2.35 3.3 1 10 Unit V V mA
(Fig. 1)
(Fig. 5)
CONTROL PART
Symbol ID Vth(ON) Vth(OFF) SC toff(SC) OT OT(hys) UV UVr IFO(H) IFO(L) tFO Parameter Circuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width VD = 15V, VCIN = 15V Condition VN1-VNC V*P1-V*PC Min. -- -- 1.2 1.7 50 50 -- 135 -- 11.5 12.0 -- -- 1.0 Limits Typ. 8 2 1.5 2.0 -- -- 0.2 -- 20 12.0 12.5 -- 10 1.8 Max. 16 4 1.8 2.3 -- -- -- -- -- 12.5 13.0 0.01 15 -- Unit mA V A s C V mA ms
Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN * Br-VNC Inverter part -20 Tj 125C, VD = 15V (Fig. 3,6) Brake part VD = 15V Detect Temperature of IGBT chip -20 Tj 125C VD = 15V, VCIN = 15V VD = 15V (Fig. 3,6) Trip level Hysteresis Trip level Reset level (Note-2) (Note-2)
(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it.
MECHANICAL RATINGS AND CHARACTERISTICS
Symbol -- -- Parameter Mounting torque Weight Mounting part -- Condition screw : M4 Min. 1.4 -- Limits Typ. 1.65 135 Max. 1.9 -- Unit N*m g
RECOMMENDED CONDITIONS FOR USE
Symbol VCC VD VCIN(ON) VCIN(OFF) fPWM tdead Parameter Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time Condition Applied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-3) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN * Br-VNC Using Application Circuit of Fig. 8 For IPM's each input signals (Fig. 7) Recommended value 800 15.0 1.5 0.8 9.0 20 2.5 Unit V V V kHz s
(Note-3) With ripple satisfying the following conditions: dv/dt swing 5V/s, Variation 2V peak to peak 5V/s 2V 15V GND
May 2009 4
MITSUBISHI
PM25RL1C120
FLAT-BASE TYPE INSULATED PACKAGE
PRECAUTIONS FOR TESTING 1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing "SC" tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.)
P, (U,V,W,B)
IN Fo IN Fo
P, (U,V,W,B)
VCIN
(0V)
V
Ic
VCIN
(15V)
V
-Ic
VD (all)
U,V,W,B, (N)
VD (all)
U,V,W,B, (N)
Fig. 1 VCE(sat) Test
Fig. 2 VEC, (VFM) Test
a) Lower Arm Switching
P
Fo
VCIN (15V) VCIN
Signal input (Upper Arm) Signal input (Lower Arm)
Fo
trr
U,V,W
VCE Irr Ic 90%
CS
Vcc 90%
N
b) Upper Arm Switching
VCIN Signal input (Upper Arm) Signal input (Lower Arm)
VD (all)
P
Ic
10% tc(on) VCIN
10%
10% tc(off)
10%
Fo
U,V,W
CS
Vcc
td(on)
tr
td(off)
tf
VCIN (15V)
Fo
(ton = td(on) + tr)
N
(toff = td(off) + tf)
VD (all)
Ic
Fig. 3 Switching Time and SC Test Circuit
Fig. 4 Switching Time Test Waveform
VCIN Short Circuit Current
P, (U,V,W,B) A
IN Fo
Constant Current SC Trip
Pulse VCE
VCIN (15V)
Ic
VD (all)
U,V,W,B, (N)
Fo toff(SC)
Fig. 5 ICES Test
Fig. 6 SC Test Waveform
IPM' input signal VCIN (Upper Arm)
0V
IPM' input signal VCIN (Lower Arm)
1.5V
2V
1.5V
t
0V
2V
1.5V
2V
t
tdead
tdead
tdead
1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value
Fig. 7 Dead time measurement point example
May 2009 5
MITSUBISHI
PM25RL1C120
FLAT-BASE TYPE INSULATED PACKAGE
P
20k 10
VUP1 UFo UP VUPC
1.5k
Vcc Fo In
OT OUT Si U
VD
IF
+ -
GND GND Vcc Fo In GND GND Vcc Fo OT OUT Si W OT OUT Si V
0.1
VVP1 VFo
1.5k
VD
VP VVPC VWP1 WFo
1.5k
M
VD
WP VWPC
In GND GND
20k
IF
10
Vcc Fo UN In
OT OUT Si N
0.1 20k
GND GND OT
10
IF
Vcc VN Fo In
OUT Si
0.1 20k
GND GND VN1
10
Vcc Fo In
OT OUT Si B
VD
IF
WN
0.1
VNC
GND GND Vcc OT OUT Si
IF
4.7k
Br
1k
Fo In
1.5k
5V
GND GND
Fo
: Interface which is the same as the U-phase
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ; Design the PCB pattern to minimize wiring length between opto-coupler and IPM's input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler. Fast switching opto-couplers: tPLH, tPHL 0.8s, Use High CMR type. Slow switching opto-coupler: CTR > 100% Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system.
* * * * * * *
May 2009 6
MITSUBISHI
PM25RL1C120
FLAT-BASE TYPE INSULATED PACKAGE
PERFORMANCE CURVES (Inverter Part)
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) 2.5 VD = 15V
30
COLLECTOR CURRENT IC (A)
Tj = 25C VD = 17V
15V
25 20 15 10 5 0
2.0
13V
1.5
1.0
0.5 Tj = 25C Tj = 125C 0 0 5 10 15 20 25 30 35
0
0.5
1.0
1.5
2.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR RECOVERY CURRENT -IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
DIODE FORWARD CHARACTERISTICS (TYPICAL) 102
7 5 4 3 2
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 12 13 14 15 IC = 25A Tj = 25C Tj = 125C 16 17 18
VD = 15V
101
7 5 4 3 2
100
Tj = 25C Tj = 125C 0 0.5 1.0 1.5 2.0 2.5 3.0
CONTROL POWER SUPPLY VOLTAGE VD (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
SWITCHING TIME (ton, toff) CHARACTERISTICS (TYPICAL) 101
SWITCHING TIME ton, toff (s)
7 5 4 3 2
toff
SWITCHING TIME tc(on), tc(off) (s)
SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS (TYPICAL) 101 VCC = 600V 7 VD = 15V 5 Tj = 25C 4 Tj = 125C 3 Inductive load
2
100
7 5 4 3 2
100
7 5 4 3
tc(off)
ton VCC = 600V VD = 15V Tj = 25C Tj = 125C Inductive load 2 3 4 5 7 102
2 tc(on)
10-1 0 10
2
3 4 5 7 101
10-1 0 10
2
3 4 5 7 101
2
3 4 5 7 102
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
May 2009 7
MITSUBISHI
PM25RL1C120
FLAT-BASE TYPE INSULATED PACKAGE
0.6 0.5 0.4 0.3 0.2 0.1 0 0 5 10 15 20 25 trr
12.0 10.0 8.0 6.0 4.0 2.0 0 30
1.5 1.0 0.5 0
Eoff
0
5
10
15
20
25
30
COLLECTOR CURRENT IC (A)
COLLECTOR REVERSE CURRENT -IC (A)
SWITCHING LOSS Err (mJ/pulse)
ID (mA)
SWITCHING RECOVERY LOSS CHARACTERISTICS (TYPICAL) 2.0 VCC = 600V 1.8 VD = 15V Tj = 25C 1.6 Tj = 125C 1.4 Inductive load 1.2 1.0 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 30
ID VS. fc CHARACTERISTICS (TYPICAL) 50.0 45.0 40.0 35.0 30.0 25.0 20.0 15.0 10.0 5.0 0 0 5 10 15 20 25 P-side VD = 15V Tj = 25C Tj = 125C N-side
COLLECTOR REVERSE CURRENT -IC (A)
fc (kHz)
UV TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) 20 UVt 18 UVr 16 14
UVt /UVr
SC TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) 2.0 VD = 15V 1.8 1.6 1.4 1.2
SC
12 10 8 6 4 2 0 -50 0 50 Tj (C) 100 150
1.0 0.8 0.6 0.4 0.2 0 -50 0 50 Tj (C)
May 2009
100
150
8
REVERSE RECOVERY CURRENT lrr (A)
SWITCHING LOSS Eon, Eoff (mJ/pulse)
REVERSE RECOVERY TIME trr (s)
SWITCHING LOSS CHARACTERISTICS (TYPICAL) 3.0 VCC = 600V VD = 15V 2.5 Tj = 25C Eon Tj = 125C 2.0 Inductive load
DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 1.0 20.0 VCC = 600V 0.9 VD = 15V 18.0 Tj = 25C 0.8 16.0 Tj = 125C 0.7 Inductive load Irr 14.0
MITSUBISHI
PM25RL1C120
FLAT-BASE TYPE INSULATED PACKAGE
(Brake Part)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 100 30 Tj = 25C OUTPUT CHARACTERISTICS (TYPICAL)
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c)
COLLECTOR CURRENT IC (A)
7 5 3 2
25 20 15 10 5 0
VD = 17V 15V 13V
10-1
7 5 3 2
10-2 Single Pulse 7 5 IGBT part; 3 Per unit base = Rth(j-c)Q = 0.7C/ W 2 FWDi part; Per unit base = Rth(j-c)F = 1.18C/ W 10-3 -5 10 2 3 5 710-4 2 3 5 710-32 3 5 710-2 2 3 5 710-12 3 5 7100 2 3 5 7101 t(sec)
0
0.5
1.0
1.5
2.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) VD = 15V
COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
2.5
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 12 13 14 15 IC = 25A Tj = 25C Tj = 125C 16 17 18
2.0
1.5
1.0
0.5 Tj = 25C Tj = 125C 0 0 5 10 15 20 25 30 35
COLLECTOR CURRENT IC (A)
CONTROL POWER SUPPLY VOLTAGE VD (V)
COLLECTOR RECOVERY CURRENT -IC (A)
DIODE FORWARD CHARACTERISTICS (TYPICAL) 102
7 5 4 3 2
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 100
VD = 15V
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c)
7 5 3 2
10-1
7 5 3 2
101
7 5 4 3 2
100
Tj = 25C Tj = 125C 0 0.5 1.0 1.5 2.0 2.5 3.0
10-2 Single Pulse 7 5 IGBT part; 3 Per unit base = Rth(j-c)Q = 0.7C/ W 2 FWDi part; Per unit base = Rth(j-c)F = 1.18C/ W 10-3 -5 10 2 3 5 710-4 2 3 5 710-32 3 5 710-2 2 3 5 710-12 3 5 7100 2 3 5 7101 t(sec)
EMITTER-COLLECTOR VOLTAGE VEC (V)
May 2009 9

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