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  Datasheet File OCR Text:
 LED - Chip
Preliminary Radiation Green Type Standard 10.04.2007 Technology InGaN/Al2O3
EL-525-31
rev. 01/07 Electrodes Both on top side
1000
typ. dimensions (25) m
P
typ. thickness 90 (10) m contact metalization gold alloy, 1.5 m backside metalization
N
N P
aluminium alloy, 1.0 m
Optical and Electrical Characteristics
Tamb = 25C, unless otherwise specified Test Parameter conditions Forward voltage Forward voltage1 Reverse voltage Luminous intensity1) Luminous intensity1) Peak wavelength Dominant wavelength Spectral bandwidth at 50% Switching time
1)
Symbol
Min
Typ
Max
Unit
IF = 20 mA IF = 350 mA IR = 10 A IF = 20 mA IF = 350 mA IF = 20 mA IF = 350 mA IF = 20 mA IF = 20 mA
VF VF VR V V P D 0.5 tr, tf 515 5 1300 12000
2.5 3.19
3.1 3.7
V V V
1500 14000 524 525 35 10 535
mcd mcd nm nm nm ns
Measured on bare chip on TO-18 header with EPIGAP equipment
Labeling
Type EL-525-31 Lot N v(typ) [mcd] VF(typ) [V] Quantity
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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