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FGP5N60UFD 600V, 5A Field Stop IGBT
October 2008
FGP5N60UFD
600V, 5A Field Stop IGBT
Features
* High current capability * Low saturation voltage: VCE(sat) =1.9V @ IC = 5A * High input impedance * Fast switching * RoHS compliant
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild's new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS, and PFC applications where low conduction and switching losses are essential.
Applications
* Induction Heating, UPS, SMPS, PFS
C
G
1
TO-220 E
1.Gate 2.Collector 3.Emitter
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) PD TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 25 C @ TC = 100 C
o o o
Ratings
600 20 10 5 15 81 32 -55 to +150 -55 to +150 300
Units
V V A A A W W
o o o
C C C
Notes: 1: Repetitive rating: Pulse width limited by max. juntion temperature
Thermal Characteristics
Symbol
RJC(IGBT) RJC(Diode) RJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Typ.
-
Max.
1.55 3.2 62.5
Units
o o
C/W C/W
oC/W
(c)2008 Fairchild Semiconductor Corporation
1
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FGP5N60UFD Rev. A
FGP5N60UFD 600V, 5A Field Stop IGBT
Package Marking and Ordering Information
Device Marking
FGP5N60UFD
Device
FGP5N60UFDTU
Package
TO-220
Packaging Type
Tube
Max Qty Qty per Tube
50ea
per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES BVCES TJ ICES
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current VGE = 0V, IC = 250A VCE = VCES, VGE = 0V, TC = 25oC VCE = VCES, VGE = 0V, TC = 125oC
600 -
0.7 -
250 1 400
V V/oC A mA nA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250A, VCE = VGE IC = 5A, VGE = 15V IC = 5A, VGE = 15V, TC = 125oC 4.0 5.0 1.9 2.1 6.5 2.4 V V V
Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 290 40 10 pF pF pF
Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 400V, IC = 5A, VGE = 15V VCC = 400V, IC = 5A, RG = 20, VGE = 15V, Inductive Load, TC = 125oC VCC = 400V, IC = 5A, RG = 20, VGE = 15V, Inductive Load, TC = 25oC 6 8 44 20 0.075 0.059 0.134 8 11 48 30 0.077 0.082 0.159 19.5 2.5 10.5 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC
FGP5N60UFD Rev. A
2
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FGP5N60UFD 600V, 5A Field Stop IGBT
Electrical Characteristics of the Diode
Symbol
VFM trr Qrr
TC = 25C unless otherwise noted
Parameter
Diode Forward Voltage IF = 5A
Test Conditions
TC = 25oC TC = 125oC TC = 25oC IES =5A, dIES/dt = 200A/s TC = 125oC
o
Min.
-
Typ.
1.7 1.5 30 140 25 173
Max
2.3 -
Units
V
Diode Reverse Recovery Time
ns
Diode Reverse Recovery Charge
TC = 25oC TC = 125 C
nC
FGP5N60UFD Rev. A
3
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FGP5N60UFD 600V, 5A Field Stop IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
15
TC = 25 C 20V 15V 12V
o
Figure 2. Typical Output Characteristics
15
TC = 125 C 20V 15V 12V
o
Collector Current, IC [A]
10
Collector Current, IC [A]
10
10V
10V
5
5
VGE = 8V
VGE = 8V
0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10
0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10
Figure 3. Typical Saturation Voltage Characteristics
15
Common Emitter VGE = 15V
Figure 4. Transfer Characteristics
20
Common Emitter VCE = 20V
Collector Current, IC [A]
TC = 25 C
Collector Current, IC [A]
o
10
TC = 25 C TC = 125 C
o
o
10
TC = 125 C
o
5
0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4
1 6 8 10 Gate-Emitter Voltage,VGE [V] 12
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
3.0
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V 10A
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
Collector-Emitter Voltage, VCE [V]
TC = -40 C
o
2.5
16
12
2.0
5A
8
10A
1.5
IC = 2.5A
4
5A IC = 2.5A
1.0 25
50 75 100 125 o Collector-EmitterCase Temperature, TC [ C]
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
FGP5N60UFD Rev. A
4
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FGP5N60UFD 600V, 5A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter TC = 25 C
o
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter TC = 125 C
o
Collector-Emitter Voltage, VCE [V]
16
16
12
12
8
10A
8
5A
4
4
IC = 2.5A
5A IC = 2.5A
10A
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20
Figure 9. Capacitance Characteristics
600
Common Emitter VGE = 0V, f = 1MHz TC = 25 C
o
Figure 10. Gate charge Characteristics
15
Common Emitter TC = 25 C
o
Gate-Emitter Voltage, VGE [V]
12
VCC = 100V 300V 200V
Capacitance [pF]
400
Cies
9
Coes
6
200
Cres
3
0 1 10 Collector-Emitter Voltage, VCE [V]
30
0 0 5 10 15 Gate Charge, Qg [nC] 20
Figure 11. SOA Characteristics
30 10
Collector Current, Ic [A]
10s 100s
Figure 12. Turn-on Characteristics vs. Gate Resistance
50
Switching Time [ns]
1
1ms 10 ms DC
10
tr
td(on)
0.1
Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature
Common Emitter VCC = 400V, VGE = 15V IC = 5A TC = 25 C TC = 125 C
o o
0.01 1 10 100 Collector-Emitter Voltage, VCE [V] 1000
1 0 10 20 30 40 50
Gate Resistance, RG []
FGP5N60UFD Rev. A
5
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FGP5N60UFD 600V, 5A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Gate Resistance
500
Common Emitter VCC = 400V, VGE = 15V IC = 5A TC = 25 C
o
Figure 14. Turn-on Characteristics vs. Collector Current
100
Common Emitter VGE = 15V, RG = 20 TC = 25 C
o o
Switching Time [ns]
Switching Time [ns]
TC = 125 C
o
TC = 125 C
tr
100
td(off)
10
td(on)
tf
10 0 10 20 30 40 50
Gate Resistance, RG []
1 2 4 6 8 10
Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs. Collector Current
500
Common Emitter VGE = 15V, RG = 20
o
Figure 16. Switching Loss vs Gate Resistance
500 200
Common Emitter VCC = 400V, VGE = 15V IC = 5A TC = 25 C
o
100
Switching Time [ns]
TC = 25 C
Switching Loss [uJ]
TC = 125 C td(off)
o
100
TC = 125 C Eon
o
tf
Eoff
20 10
2
4
6
8
10
40
0
10
Collector Current, IC [A]
20 30 40 Gate Resistance, RG []
50
Figure 17. Switching Loss vs Collector Current
1000
Common Emitter VGE = 15V, RG = 20 TC = 25 C
o o
Figure 18. Turn off Switching SOA Characteristics
20 10
Collector Current, IC [A]
Switching Loss [uJ]
TC = 125 C Eon
100
Eoff
1
Safe Operating Area
10 2 4 6 8 10
Collector Current, IC [A]
0.1 1
VGE = 15V, TC = 125 C
o
10
100
1000
Collector-Emitter Voltage, VCE [V]
FGP5N60UFD Rev. A
6
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FGP5N60UFD 600V, 5A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Forward Characteristist
15 10
TC = 125 C
o
o
Figure 20. Reverse Current
100
TJ = 125 C TJ = 25 C
o
Reverse Current , IR [A]
Forward Current, IF [A]
10
1
TJ = 75 C
o
1
TC = 75 C
o
0.1
TC = 25 C
o
0.1 0 1 2 Forward Voltage, VF [V] 15
0.01 0 200 400 Reverse Voltage, VR [V] 600
Figure 21. Reverse Recovery Current
2.5
Reverse Recovery Currnet, Irr [A]
Figure 22. Stored Charge
50
Stored Recovery Charge, Qrr [nC]
2.0
200A/s
40
1.5
30
200A/s
1.0
di/dt = 100A/s
20
di/dt = 100A/s
0.5
10
0.0 2 4 6 8 Forward Current, IF [A] 10
0 2 4 6 8 10
Forward Current, IF [A]
Figure 23. Reverse Recovery Time
50
Reverse Recovery Time, trr [ns]
40
200A/s
30
di/dt = 100A/s
20
10
0 2 4 6 8 10
Forward Current, IF [A]
FGP5N60UFD Rev. A
7
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FGP5N60UFD 600V, 5A Field Stop IGBT
Typical Performance Characteristics
Figure 24. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5 0.2
0.1
0.1 0.05 0.02 0.01 single pulse
PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC
0.01
1E-3 1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
FGP5N60UFD Rev. A
8
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FGP5N60UFD 600V, 5A Field Stop IGBT
Mechanical Dimensions
TO-220
FGP5N60UFD Rev. A
9
www.fairchildsemi.com
FGP5N60UFD 600V, 5A Field Stop IGBT
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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I35
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FGP5N60UFD Rev. A
10
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