 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FL10KM-12A HIGH-SPEED SWITCHING USE FL10KM-12A OUTLINE DRAWING 10 0.3 6.5 0.3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 2.6 0.2 G 10V DRIVE G VDSS ............................................................................... 600V G rDS (ON) (MAX) ................................................................ 1.1 G ID ......................................................................................... 10A GATE DRAIN SOURCE TO-220FN APPLICATION SMPS, Inverter fluorescent light sets, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 600 30 10 30 10 40 -55 ~ +150 -55 ~ +150 2000 2.0 Unit V V A A A W C C V g Sep. 2001 L = 200H AC for 1minute, Terminal to case Typical value MITSUBISHI Nch POWER MOSFET FL10KM-12A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V IGS = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 600 30 -- -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 3.0 0.92 4.60 7.0 1150 135 45 24 40 220 85 1.5 -- Max. -- 10 1 4.0 1.10 5.50 -- -- -- -- -- -- -- -- 2.0 3.13 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50 IS = 5A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 tw = 10s 40 101 7 5 3 2 100s 30 1ms 10ms 20 100 7 5 3 2 10 10-1 TC = 25C 0 0 50 100 150 200 7 5 Single Pulse DC 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 20 PD = 40W VGS = 10V 6V TC = 25C Pulse Test OUTPUT CHARACTERISTICS (TYPICAL) 10 PD = 40W TC = 25C Pulse Test VGS = 10V 6V 5V 4.5V DRAIN CURRENT ID (A) 16 DRAIN CURRENT ID (A) 8 12 5V 6 8 4.5V 4 4V 4 4V 2 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FL10KM-12A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) TC = 25C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 5 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () TC = 25C Pulse Test 32 ID = 15A 4 24 3 VGS = 10V 16 10A 2 8 5A 1 0 0 4 8 12 16 20 00 10 2 3 5 7 101 2 3 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) 20 TC = 25C VDS = 50V Pulse Test FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 101 VDS = 10V 7 Pulse Test 5 3 2 TC = 25C 75C 125C DRAIN CURRENT ID (A) 12 FORWARD TRANSFER ADMITTANCE yfs (S) 16 100 7 5 3 2 8 4 0 0 4 8 12 16 20 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 Ciss 3 2 SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 TCh = 25C VDD = 200V VGS = 10V td(off) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 3 2 103 7 5 3 2 Coss 102 7 5 3 2 tf 102 7 5 3 TCh = 25C 2 f = 1MHZ VGS = 0V 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 Crss tr td(on) 101 101 2 3 5 7 100 2 3 5 7 101 2 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FL10KM-12A HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 SOURCE CURRENT IS (A) VGS = 0V Pulse Test TC = 125C 75C 25C 20 TCh = 25C ID = 10A 16 32 12 VDS = 100V 200V 400V 24 8 16 4 8 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = 10V 7 ID = 5A 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) VDS = 10V ID = 1mA 4.0 3.0 100 7 5 3 2 2.0 1.0 10-1 -50 0 50 100 150 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch - c) (C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 D = 1.0 0.5 0.2 1.2 100 7 5 1.0 0.8 0.1 3 0.05 2 PDM tw 10-1 7 5 3 2 0.02 0.01 Single Pulse T D= tw T 0.6 0.4 -50 0 50 100 150 10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Sep. 2001 CHANNEL TEMPERATURE Tch (C) |
Price & Availability of FL10KM-12A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |